Device and method for the demodulation of modulated electromagnetic wave fields

• US 8,115,158 B2
• Filed: 01/05/2011
• Issued: 02/14/2012
• Est. Priority Date: 10/19/2005
• Status: Active Grant

• Current Assignee: Ams Sensors Singapore Pte. Ltd. (Ams-Osram AG)
• Original Assignee: MESA IMAGING AG (Ams-Osram AG)
• Inventors: Buettgen, Bernhard
• Primary Examiner(s): Le, Que T
• Application Number:
  US12/984,931
• Publication Number:
  US 20110101206A1
• Time in Patent Office: 405 Days
• Field of Search: 250/208.1, 250/214.R, 250/239, 257/429, 257186-229, 257461-465, 438/99, 438/207, 438241-249, 438/314, 438/739
• US Class Current: 250/208.1
• CPC Class Codes: G01S 17/894 3D imaging with simultaneous measurement of time-of-flight at a 2D array of receiver pixels, e.g. time-of-flight cameras or flash lidar
• CPC Class Codes: G01S 7/4863 Detector arrays, e.g. charge-transfer gates
• CPC Class Codes: H01L 27/14603 Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
• CPC Class Codes: H01L 31/02005 for device characterised by at least one potential jump barrier or surface barrier

Abstract

A new pixel in semiconductor technology comprises a photo-sensitive detection region (1) for converting an electromagnetic wave field into an electric signal of flowing charges, a separated demodulation region (2) with at least two output nodes (D10, D20) and means (IG10, DG10, IG20, DG20) for sampling the charge-current signal at least two different time intervals within a modulation period. A contact node (K2) links the detection region (1) to the demodulation region (2). A drift field accomplishes the transfer of the electric signal of flowing charges from the detection region to the contact node. The electric signal of flowing charges is then transferred from the contact node (K2) during each of the two time intervals to the two output nodes allocated to the respective time interval. The separation of the demodulation and the detection regions provides a pixel capable of demodulating electromagnetic wave field at high speed and with high sensitivity.

Claims

1. An imaging system, comprising

a light source for illuminating with a modulated electromagnetic signal;

a sensor comprising an array of pixel devices for sensing and demodulating the modulated electromagnetic signal that is incident on the sensor; and

a controller for controlling the sensor and the light source; and

wherein the pixel devices each comprise;

a demodulation region including at least two output nodes for receiving charge carriers and moving the charge carriers to either of the at least two output nodes in dependence upon at least two time intervals within a modulation period of the modulated electromagnetic signal based on the timing regulation of the controller, and

at least one photo-sensitive detection region in which the incident electromagnetic signal is converted into the charge carriers, the photo-sensitive detection region moving the charge carriers to the demodulation region.

2. An imaging system as claimed in claim 1, wherein a lateral extent of the photo-sensitive detection region decreases in a direction of the demodulation region.

8. An imaging system as claimed in claim 1, wherein the photo-sensitive detection region moves the charge carriers across the photo-sensitive detection region to the demodulation region using a lateral drift field.

9. An imaging system as claimed in claim 1, wherein the photo-sensitive detection region moves the charge carriers across the photo-sensitive detection region to the demodulation region using a lateral drift field that is generated by a current flow vertically adjacent to the photo-sensitive detection region.

10. An imaging system as claimed in claim 1, wherein the photo-sensitive detection region moves the charge carriers across the photo-sensitive detection region to the demodulation region using doping of a semiconductor substrate of the photo-sensitive detection region.

3. An imaging system, comprising

a sensor comprising an array of pixel devices for sensing an electromagnetic signal that is incident on the sensor;

wherein the pixel devices each comprise;

a photo-sensitive detection region in which the incident electromagnetic signal is converted into charge carriers, the photo-sensitive detection region moving the charge carriers across the photo-sensitive detection region, wherein a lateral extent of the photo-sensitive detection region decreases in a direction movement of the charge carriers.

4. An imaging system as claimed in claim 3, wherein the photo-sensitive detection region moves the charge carriers across the photo-sensitive detection region to a demodulation region.

5. An imaging system as claimed in claim 3, wherein the photo-sensitive detection region moves the charge carriers across the photo-sensitive detection region to a demodulation region using a lateral drift field.

6. An imaging system as claimed in claim 3, wherein the photo-sensitive detection region moves the charge carriers across the photo-sensitive detection region to a demodulation region using a lateral drift field that is generated by a current flow vertically adjacent to the photo-sensitive detection region.

7. An imaging system as claimed in claim 3, wherein the photo-sensitive detection region moves the charge carriers across the photo-sensitive detection region to a demodulation region using doping of a semiconductor substrate of the photo-sensitive detection region.