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Light emitting device

  • US 8,115,192 B2
  • Filed: 05/01/2009
  • Issued: 02/14/2012
  • Est. Priority Date: 09/12/2008
  • Status: Active Grant
First Claim
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1. A light emitting device comprising:

  • a substrate;

    a p-side electrode;

    a stacked body including at least a light emitting layer made of Inx(AlyGa1-y)1-xP (0≦

    x≦

    1, 0≦

    y≦

    1), a p-type cladding layer made of Inx(AlyGa1-y)1-xP 0≦

    x≦

    1, 0≦

    y≦

    1), a p-type current diffusion layer made of Inx AlyGa1-y)1-xP(0≦

    x≦

    1, 0≦

    y≦

    1) or GaP, and a contact layer, the current diffusion layer being provided between the p-side electrode and the p-type cladding layer;

    a first metal layer provided on the contact layer and being capable of reflecting emission light from the light emitting layer; and

    a second metal layer provided on the substrate and bonded to the first metal layer,the p-type cladding layer being located more distant from a bonding interface between the first metal layer and the second metal layer than the light emitting layer, and the p-type cladding layer having a carrier concentration of 0.5×

    1017 cm3 or more and 3×

    1017 cm3 or less.

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