Semiconductor device with oxide semiconductor formed within
First Claim
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1. A semiconductor device including a thin film transistor, the thin film transistor comprising:
- a gate electrode layer;
a gate insulating layer over the gate electrode layer;
a source electrode layer and a drain electrode layer over the gate insulating layer;
a first buffer layer having n-type conductivity over the source electrode layer;
a second buffer layer having n-type conductivity over the drain electrode layer; and
an oxide semiconductor layer over the first buffer layer and the second buffer layer,wherein the oxide semiconductor layer overlapping with the gate electrode layer is partly over and in contact with the gate insulating layer and is provided between the source electrode layer and the drain electrode layer,wherein a carrier concentration of the first buffer layer and the second buffer layer is higher than a carrier concentration of the oxide semiconductor layer,wherein the oxide semiconductor layer and the source electrode layer are electrically connected to each other with the first buffer layer interposed therebetween,wherein the oxide semiconductor layer and the drain electrode layer are electrically connected to each other with the second buffer layer interposed therebetween, andwherein a part of the first buffer layer and a part of the second buffer layer are in contact with the gate insulating layer in a region between the source electrode and the drain electrode.
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Abstract
One of the objects of the present invention is to provide a thin film transistor using an oxide semiconductor film containing indium (In), gallium (Ga), and zinc (Zn), in which the contact resistance between the oxide semiconductor layer and a source and drain electrodes is reduced, and to provide a method for manufacturing the thin film transistor. An ohmic contact is formed by intentionally providing a buffer layer having a higher carrier concentration than the IGZO semiconductor layer between the IGZO semiconductor layer and the source and drain electrode layers.
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Citations
16 Claims
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1. A semiconductor device including a thin film transistor, the thin film transistor comprising:
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a gate electrode layer; a gate insulating layer over the gate electrode layer; a source electrode layer and a drain electrode layer over the gate insulating layer; a first buffer layer having n-type conductivity over the source electrode layer; a second buffer layer having n-type conductivity over the drain electrode layer; and an oxide semiconductor layer over the first buffer layer and the second buffer layer, wherein the oxide semiconductor layer overlapping with the gate electrode layer is partly over and in contact with the gate insulating layer and is provided between the source electrode layer and the drain electrode layer, wherein a carrier concentration of the first buffer layer and the second buffer layer is higher than a carrier concentration of the oxide semiconductor layer, wherein the oxide semiconductor layer and the source electrode layer are electrically connected to each other with the first buffer layer interposed therebetween, wherein the oxide semiconductor layer and the drain electrode layer are electrically connected to each other with the second buffer layer interposed therebetween, and wherein a part of the first buffer layer and a part of the second buffer layer are in contact with the gate insulating layer in a region between the source electrode and the drain electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor device including a thin film transistor, the thin film transistor comprising:
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a gate electrode layer; a gate insulating layer over the gate electrode layer; a source electrode layer and a drain electrode layer over the gate insulating layer; a first buffer layer having n-type conductivity directly in contact with upper and side surfaces of the source electrode layer; a second buffer layer having n-type conductivity directly in contact with upper and side surfaces of the drain electrode layer; and an oxide semiconductor layer over the first buffer layer and the second buffer layer, wherein a part of the first buffer layer and a part of the second buffer layer are in contact with the gate insulating layer in a region between the source electrode and the drain electrode. - View Dependent Claims (11, 12, 13, 14, 15, 16)
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Specification