Semiconductor display device

• US 8,115,210 B2
• Filed: 06/17/2011
• Issued: 02/14/2012
• Est. Priority Date: 04/15/2002
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Murakami, Satoshi, Hayakawa, Masahiko, Kato, Kiyoshi, Osame, Mitsuaki, Hirosue, Takashi, Fujikawa, Saishi
• Primary Examiner(s): Soward, Ida M
• Application Number:
  US13/162,791
• Publication Number:
  US 20110241008A1
• Time in Patent Office: 242 Days
• Field of Search: 257/57, 257/59, 257/66, 257/68, 257/69, 257/72, 257/291, 257/E29.151, 257/E29.182, 257/E29.202
• US Class Current: 257/72
• CPC Class Codes: G02F 1/136204 Arrangements to prevent high voltage or static electricity failures
• CPC Class Codes: H01L 21/76804 by forming tapered via holes
• CPC Class Codes: H01L 21/76831 in via holes or trenches, e.g. non-conductive sidewall liners
• CPC Class Codes: H01L 27/1244 for preventing breakage, peeling or short circuiting
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/66765 Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile
• CPC Class Codes: H01L 29/78645 with multiple gate
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 85/1135 Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
• CPC Class Codes: Y10S 257/906 Dram with capacitor electrodes used for accessing, e.g. bit line is capacitor plate
• CPC Class Codes: Y10S 257/908 Dram configuration with transistors and capacitors of pairs of cells along a straight line between adjacent bit lines

Abstract

A semiconductor display device with an interlayer insulating film in which surface levelness is ensured with a limited film formation time, heat treatment for removing moisture does not take long, and moisture in the interlayer insulating film is prevented from escaping into a film or electrode adjacent to the interlayer insulating film. A TFT is formed and then a nitrogen-containing inorganic insulating film that transmits less moisture compared to organic resin film is formed so as to cover the TFT. Next, organic resin including photosensitive acrylic resin is applied and an opening is formed by partially exposing the organic resin film to light. The organic resin film where the opening is foamed, is then covered with a nitrogen-containing inorganic insulating film which transmits less moisture than organic resin film does. Thereafter, the gate insulating film and the two layers of the nitrogen-containing inorganic insulating films are partially etched away in the opening of the organic resin film to expose the active layer of the TFT.

Claims

1. A display device comprising:

a pixel portion over a substrate;

an input terminal over the substrate;

a wiring electrically connected between the pixel portion and the input terminal;

a first transistor wherein a gate of the first transistor and one of a source and a drain of the first transistor are electrically connected to a first voltage line, and the other of the source and the drain of the first transistor is electrically connected to the wiring;

a second transistor wherein a gate of the second transistor and one of a source and a drain of the second transistor are electrically connected to the wiring, and the other of the source and the drain of the second transistor is electrically connected to a second voltage line;

a capacitor comprising a first electrode and a second electrode wherein the first electrode is electrically connected to the wiring, and the second electrode is electrically connected to one of the first voltage line and the second voltage line.

2. The display device according to claim 1, wherein the first transistor and the second transistor are N-channel transistors.

3. The display device according to claim 1, wherein the first transistor and the second transistor are P-channel transistors.

4. The display device according to claim 1, wherein the first voltage line is a power supply voltage line.

5. The display device according to claim 1, wherein the second voltage line is a ground voltage line.

6. The display device according to claim 1, further comprising:

a first inorganic insulating film over the first electrode;

an organic resin film over the first inorganic insulating film, the organic resin film including an opening;

a second inorganic insulating film over the organic resin film, the second inorganic insulating film being in contact with the first inorganic insulating film in the opening, wherein the second electrode is formed over the second inorganic insulating film and is overlapped with the opening at least partly,

wherein a surface of the organic resin film is rounded in the opening.

7. The display device according to claim 6, wherein the organic resin film comprises a photosensitive resin.

8. The display device according to claim 6, wherein the second inorganic insulating film comprises a material selected from the group consisting of silicon oxynitride, silicon nitride, aluminum nitride and aluminum oxynitride.

9. A display device comprising:

a pixel portion over a substrate;

an input terminal over the substrate;

a wiring electrically connected between the pixel portion and the input terminal;

a first transistor wherein a gate of the first transistor and one of a source and a drain of the first transistor are electrically connected to a first voltage line, and the other of the source and the drain of the first transistor is electrically connected to the wiring;

a second transistor wherein a gate of the second transistor and one of a source and a drain of the second transistor are electrically connected to the wiring, and the other of the source and the drain of the second transistor is electrically connected to a second voltage line;

a first capacitor comprising a first electrode and a second electrode wherein the first electrode is electrically connected to the wiring, and the second electrode is electrically connected to the first voltage line.

a second capacitor comprising a first electrode and a second electrode wherein the first electrode of the second capacitor is electrically connected to the wiring, and the second electrode of the second capacitor is electrically connected to the second voltage line.

10. The display device according to claim 9, wherein the first transistor and the second transistor are N-channel transistors.

11. The display device according to claim 9, wherein the first transistor and the second transistor are P-channel transistors.

12. The display device according to claim 9, wherein the first voltage line is a power supply voltage line.

13. The display device according to claim 9, wherein the second voltage line is a ground voltage line.

14. The display device according to claim 9, further comprising:

a first inorganic insulating film over the first electrodes of the first capacitor and the second capacitor;

an organic resin film over the first inorganic insulating film, the organic resin film including a first opening over the first electrode of the first capacitor and a second opening over the first electrode of the second capacitor;

a second inorganic insulating film over the organic resin film, the second inorganic insulating film being in contact with the first inorganic insulating film in the first opening and the second opening, wherein the second electrode of the first capacitor is formed over the second inorganic insulating film and is overlapped with the first opening at least partly, and the second electrode of the second capacitor is formed over the second inorganic insulating film and is overlapped with the second opening at least partly,

wherein a surface of the organic resin film is rounded in the first opening and the second opening.

15. A display device comprising:

a pixel portion over a substrate;

an input terminal over the substrate;

a wiring electrically connected between the pixel portion and the input terminal;

a first transistor wherein a gate of the first transistor and one of a source and a drain of the first transistor are electrically connected to a first voltage line, and the other of the source and the drain of the first transistor is electrically connected to the wiring;

a second transistor wherein a gate of the second transistor and one of a source and a drain of the second transistor are electrically connected to the wiring, and the other of the source and the drain of the second transistor is electrically connected to a second voltage line;

a capacitor comprising a first electrode and a second electrode wherein the first electrode is electrically connected to the wiring, and the second electrode is electrically connected to one of the first voltage line and the second voltage line; and

a resistor comprising a first terminal and a second terminal wherein the first terminal is electrically connected to the wiring and the second terminal is electrically connected to the second voltage line.

16. The display device according to claim 15, wherein the first transistor and the second transistor are N-channel transistors.

17. The display device according to claim 15, wherein the first transistor and the second transistor are P-channel transistors.

18. The display device according to claim 15, wherein the first voltage line is a power supply voltage line.

19. The display device according to claim 15, wherein the second voltage line is a ground voltage line.

20. The display device according to claim 15, further comprising:

a first inorganic insulating film over the first electrode;

an organic resin film over the first inorganic insulating film, the organic resin film including an opening;

a second inorganic insulating film over the organic resin film, the second inorganic insulating film being in contact with the first inorganic insulating film in the opening, wherein the second electrode is formed over the second inorganic insulating film and is overlapped with the opening at least partly,

wherein a surface of the organic resin film is rounded in the opening.