Low optical loss electrode structures for LEDs

• US 8,115,226 B2
• Filed: 09/22/2010
• Issued: 02/14/2012
• Est. Priority Date: 05/19/2006
• Status: Active Grant

• Current Assignee: Bridgelux Incorporated
• Original Assignee: Bridgelux Incorporated
• Inventors: Shum, Frank T., So, William W., Lester, Steven D.
• Primary Examiner(s): NGUYEN, DAO H
• Application Number:
  US12/888,293
• Publication Number:
  US 20110024782A1
• Time in Patent Office: 510 Days
• Field of Search: 257/79, 257/88, 257/98, 257/99, 257/103, 257/E27.121, 257/E33.005, 257/E33.068, 257/E21.158, 257/E33.069, 438/25, 438/29, 438/39, 438/42, 438/46, 372/38.09, 372/43.01, 372/50.124
• US Class Current: 257/98
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/385 the electrode extending at least partially onto a side surface of the semiconductor body
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

An electrode structure is disclosed for enhancing the brightness and/or efficiency of an LED. The electrode structure can have a metal electrode and an dielectric material formed intermediate the electrode and a light emitting semiconductor material. Electrical continuity between the semiconductor material and the metal electrode is provided by an optically transmissive ohmic contact layer, such as a layer of Indium Tin Oxide. The metal electrode thus can be physically separated from the semiconductor material by one or more of the dielectric material and the ohmic contact layer. The dielectric layer can increase total internal reflection of light at the interface between the semiconductor and the dielectric layer, which can reduce absorption of light by the electrode. Such LED can have enhanced utility and can be suitable for uses such as general illumination.

Claims

1. An electrode structure for interfacing with a semiconductor material in which is formed a PN junction capable of generating light responsive to application of a potential across the PN junction, the electrode structure comprising:

a metal electrode;

a non-perforated region of dielectric material disposed between the metal electrode and a surface of the semiconductor material, the non-perforated region of dielectric material having an index of refraction greater than or equal to one and less than that of a semiconductor upon which the non-perforated region of dielectric material is formed; and

an optically transmissive ohmic contact layer establishing ohmic contact between the metal electrode and the semiconductor material, wherein the metal electrode is physically separated from the surface of the semiconductor material by one or more of the optically transmissive ohmic contact layer and the non-perforated region of dielectric material, wherein

the electrode structure and the non-perforated region of dielectric material are relatively disposed for conduction of electric current through the electrode structure to the semiconductor material only at a periphery of the non-perforated layer of dielectric material, and light generated by the PN junction is emitted through the optically transmissive ohmic contact layer.

2. The electrode structure of claim 1, wherein the optically transmissive ohmic contact layer comprises at least one material selected from the group consisting of:

Indium Tin Oxide, Nickel Oxide, and Ru0₂.

3. The electrode structure of claim 1, wherein the metal electrode comprises a reflective layer facing the surface of the semiconductor material.

4. The electrode structure of claim 1, wherein the non-perforated region of dielectric material comprises porous silicon dioxide, and has a lower index of refraction than non-porous silicon dioxide.

5. The electrode structure of claim 1, wherein the non-perforated region of dielectric material has a thickness of at least one half of a wavelength of light emitted by the semiconductor material.

6. The electrode structure of claim 1, wherein the continuous region of dielectric material has a thickness of about between ½

and 1¾

wavelengths of light emitted by the semiconductor material in the non-perforated layer of dielectric material.

7. The electrode structure of claim 1, wherein the metal electrode comprises a layer of Rhenium disposed between the non-perforated region of dielectric material and metallic bonding region comprising Au.

8. The electrode structure of claim 1, wherein the optically transmissive ohmic contact layer comprises porous Indium Tin Oxide.

9. A light emitting diode (LED) formed in the semiconductor material and comprising the electrode structure of claim 1 for supplying an electric potential across the diode.

10. The electrode structure of claim 1, wherein the metal electrode is a pad for receiving a wire bond, wherein the wire bond pad makes ohmic contact with the semiconductor material through the ohmic contact layer.

11. The electrode structure of claim 1, wherein the optically transmissive ohmic contact layer substantially covers the surface of the semiconductor material, the metal electrode is a pad for receiving a wire bond, and the non-perforated layer of dielectric material is substantially co-extensive with the wire bond pad.

12. An electrode structure for interfacing with a semiconductor material in which is formed a Light Emitting Diode (LED) device, the electrode structure comprising:

a metal electrode supported from a planar surface of the semiconductor material;

a non-perforated layer of dielectric material disposed between the metal electrode and the surface of the semiconductor material, the non-perforated layer of dielectric material having an index of refraction greater than or equal to one and less than that of the semiconductor material, the non-perforated layer of dielectric material covering only a portion of the planar surface of the semiconductor material; and

an optically transmissive ohmic contact layer contacting the electrode and the surface of the semiconductor in an area of the surface of the semiconductor material not covered by the non-perforated layer of dielectric material or the metal electrode, wherein current flow occurs at a periphery of the non-perforated layer of dielectric material responsive to a potential applied to the metal electrode, and a metal electrode in ohmic contact with an opposite polarity surface.

13. The electrode structure of claim 12, wherein the non-perforated layer of dielectric material has a thickness of at least one half of a wavelength of light emitted by the LED device in the dielectric material.

14. The electrode structure of claim 12, wherein the optically transmissive ohmic contact layer comprises Indium Tin Oxide.

15. The electrode structure of claim 12, wherein the optically transmissive ohmic contact layer is disposed between the surface of the semiconductor material, and the metal electrode.