Nanosecond pulse generator

• US 8,115,343 B2
• Filed: 05/22/2009
• Issued: 02/14/2012
• Est. Priority Date: 05/23/2008
• Status: Active Grant

• Current Assignee: University of Southern California
• Original Assignee: University of Southern California
• Inventors: Sanders, Jason, Kuthi, Andras, Gundersen, Martin A., Moore, William Henry
• Primary Examiner(s): RUTLAND WALLIS, MICHAEL
• Application Number:
  US12/471,229
• Publication Number:
  US 20100038971A1
• Time in Patent Office: 998 Days
• Field of Search: 307/108
• US Class Current: 307/108
• CPC Class Codes: C12M 35/02 Electrical or electromagnetic means, e.g. for electroporation or for cell fusion
• CPC Class Codes: H03K 17/74 by the use, as active elements, of diodes by the use of more than one type of semiconductor device H03K17/567; by the use of tunnel diodes H03K17/58; by the use of negative resistance diodes H03K17/70
• CPC Class Codes: H03K 3/57 the switching device being a semiconductor device
• CPC Class Codes: H03K 5/07 by the use of resonant circuits
• CPC Class Codes: H03K 5/12 by steepening leading or trailing edges

Abstract

This invention relates to a pulse generator circuit for delivering a short high current pulse to a load. This pulse generator comprises a junction recovery diode, a switch, a first resonant circuit and a second resonant circuit. The diode may be configured to store charges in its depletion layer when there is a forward flow of a current and to rapidly switch open after the depletion layer is discharged by a reverse flow of a current. After the diode rapidly switch opens, the pulse generator may provide a reverse current to the load. This pulse generator may be configured to generate at least one pulse that is having a length of no more than 100 nanoseconds at the full-width-at-half-maximum and an amplitude of at least 1 kilovolt. Electrodes may be connected to the pulse generator to deliver one pulse or plurality of pulses to biological cells such as tumor cells.

Claims

1. A pulse generator circuit for delivering a short high current pulse to a load comprising:

a diode configured to store charges in its depletion layer when there is a forward flow of a current and to rapidly switch open after the depletion layer is substantially discharged by a reverse flow of a current;

a switch configured to allow storage of energy from a source when it is opened and to allow the forward current flow after it is closed;

a first resonant circuit configured to store energy from the source when the switch is opened and to provide the forward current flow through the diode after the switch is closed, thereby charging the depletion layer of the diode; and

a second resonant circuit configured to store the energy transferred from the first resonant circuit after the switch is closed and, solely due to the closure of the switch, to provide the reverse current flow through the diode until the depletion layer of the diode is substantially discharged, thereby causing the diode to rapidly switch open, and thereafter to provide a reverse current to the load.

2. The pulse generator circuit of claim 1, wherein the pulse generator is configured to cause the charges stored in the depletion layer of the diode to be substantially discharged when the peak current flowing through the second resonant circuit is substantially higher than the peak current that previously flowed through the first resonant circuit.

3. The pulse generator circuit of claim 1, wherein the pulse generator is configured to cause the charges stored in the depletion layer of the diode to be substantially discharged when the ratio of the peak of the reverse flow of the current to the peak of the forward flow of the current is substantially approaching to two.

4. The pulse generator circuit of claim 1, wherein the diode is configured to operate in a junction recovery mode.

5. The pulse generator circuit of claim 1, wherein the diode is configured to operate in a silicon opening switch mode.

6. The pulse generator circuit of claim 1, wherein the diode has a junction recovery time longer than 10 nanoseconds.

7. The pulse generator circuit of claim 1, wherein the diode has a junction recovery time longer than 25 nanoseconds.

8. The pulse generator circuit of claim 1, wherein the diode is configured to have a snap-off time shorter than 10 percent of its junction recovery time.

9. The pulse generator circuit of claim 1, wherein the diode is configured to store charges in its depletion layer with an amount higher than one micro-coulomb.

10. The pulse generator circuit of claim 1, wherein the first resonant circuit includes a first inductor.

11. The pulse generator circuit of claim 10, wherein the first inductor is at least one of an air-core inductor, linear-magnetic-core inductor, saturable-magnetic-core inductor or combinations thereof.

12. The pulse generator circuit of claim 10, wherein the first inductor is an air-core inductor.

13. The pulse generator circuit of claim 1, wherein the second resonant circuit includes a second inductor.

14. The pulse generator circuit of claim 13, wherein the second inductor is at least one of an air-core inductor, linear-magnetic-core inductor, saturable-magnetic-core inductor or combinations thereof.

15. The pulse generator circuit of claim 13 wherein the second inductor is an air-core inductor.

16. The pulse generator circuit of claim 1, wherein the resonant frequency of the first resonance circuit and the resonant frequency of the second resonance circuit are substantially the same.

17. The pulse generator circuit of claim 1, wherein the resonant frequency of the first resonance circuit and the resonant frequency of the second resonance circuit are substantially different.

18. The pulse generator circuit of claim 1, wherein the switch has a turn-on time of less than 100 nanoseconds.

19. The pulse generator circuit of claim 1, wherein the switch is at least one of a metal-oxide semiconductor field effect transistor switch, integrated gate bipolar transistor switch, bipolar junction transistor switch, silicon controlled rectifier switch, gas discharge switch, or combinations thereof.

20. The pulse generator circuit of claim 1, wherein the pulse generator further comprises a transformer configured to isolate the pulse generator circuit.

21. The pulse generator circuit of claim 1, wherein the pulse generator is configured to generate at least one pulse that is having a length of no more than 100 nanoseconds at the full-width-at-half-maximum and an amplitude of at least 1 kV.

22. The pulse generator circuit of claim 1, wherein the first resonant circuit comprises a first capacitor and a first inductor;

the second resonant circuit comprises a second capacitor and a second inductor;

each of the first capacitor, the first inductor, the second capacitor, and the second inductor has a first terminal and a second terminal; and

the first terminal of the first inductor is connected to both the first terminal of the first capacitor and the second terminal of the second capacitor.

23. The pulse generator circuit of claim 22, wherein the pulse generator circuit further comprises a ground;

the diode has an anode side and a cathode side;

the anode side of the diode is connected to the ground;

the first terminal of the second inductor is connected to the cathode side of the diode; and

the first terminal of the second capacitor is connected to the second terminal of the second inductor.

24. The pulse generator circuit of claim 23, wherein the second terminal of the first inductor is connected to the ground;

the switch has a first terminal and a second terminal; and

the first terminal of the switch is connected to the second terminal of the first capacitor and the second terminal of the switch is connected to the ground.

25. The pulse generator circuit of claim 1, wherein the switch is an array of switches configured to act as a single switch, and wherein the single switch is only in closed state or only in opened state.