Sensor for detecting high frequency signals

• US 8,115,693 B2
• Filed: 10/01/2007
• Issued: 02/14/2012
• Est. Priority Date: 11/20/2004
• Status: Expired due to Fees

• Current Assignee: Triton Services, Inc.
• Original Assignee: Scenterra, Inc.
• Inventors: Salsman, Kenneth E., So, Daniel W.
• Primary Examiner(s): Le, Hoanganh
• Application Number:
  US11/906,412
• Publication Number:
  US 20120007585A1
• Time in Patent Office: 1,597 Days
• Field of Search: 343/703, 343/700.MS, 736/040.1, 735/79, 73/23, 73/31, 436/164, 374/121, 374/244
• US Class Current: 343/703
• CPC Class Codes: G01J 3/42 Absorption spectrometry; Double beam spectrometry; Flicker spectrometry; Reflection spectrometry beam switching arrangements G01J3/08
• CPC Class Codes: G01R 23/163 adapted for measuring in circuits having distributed constants
• CPC Class Codes: G01R 23/17 with optical or acoustical auxiliary devices
• CPC Class Codes: G01R 29/0871 Complete apparatus or systems; circuits, e.g. receivers or amplifiers G01R29/0878, G01R29/0892 take precedence; dosimeters, warning devices G01R29/0857
• CPC Class Codes: G01R 29/0878 Sensors; antennas; probes; detectors wave guide measuring sections G01R1/24
• CPC Class Codes: H01Q 1/247 with frequency mixer, e.g. for direct satellite reception or Doppler radar

Abstract

A sensor that senses incident RF signals is provided. The sensor is capable of sensing signals in the Gigahertz (GHz) and Terahertz (THz) range. The sensor may utilize one or more cantilevers, an interferometer, or may be formed in a box-type configuration.

Claims

1. A sensor that senses incident energy, the sensor comprising:

a receiver capable of receiving incident energy;

a MEMS, wherein a first portion of the MEMS is electrically coupled to the receiver, wherein a second portion of the MEMS is capable of being deflected by an amount upon receipt of the received incident energy via a change in potential within a known electrical field, and wherein the amount of deflection of the second portion of the MEMS corresponds to an amount of received incident energy; and

a detection system including a detection source that applies a detection beam to the second portion of the MEMS, wherein the detection beam interacts with the second portion of the MEMS to thereby provide an affected detection beam, and wherein a characteristic of the affected detection beam varies correspondingly to the amount of deflection of the second portion of the MEMS, wherein the detection system further includes a detector that detects the varying characteristic of the affected detection beam, and wherein the detected varying characteristic of the affected detection beam is used to determine the received incident energy.

2. The sensor of claim 1 further comprising an electrode which provides the electrical field.

3. The sensor of claim 2, wherein the electrical field corresponds to a direct current or a waveform.

4. The sensor of claim 2, wherein the oscillation of the MEMS creates a change in capacitance between the MEMS and the electrode.

5. The sensor of claim 2, wherein the oscillation of the MEMS generates a transfer of electrical charge to the electrode from the MEMS.

6. The sensor of claim 1, wherein the MEMS is a cantilever.

7. The sensor of claim 1, wherein the receiver is an antenna.

8. The sensor of claim 1, wherein the incident energy comprises radiation of the type selected from the group consisting of electromagnetic, IR, visible light, UV, X-Ray, alpha, beta, gamma, neutron, nuclear, magnetic, and combinations thereof.

9. The sensor of claim 1, wherein the incident energy is in the gigahertz range or the terahertz range.

10. The sensor of claim 1 further comprising an aperture positioned between the second portion of the MEMS and the detector.

11. The sensor of claim 1, wherein the characteristic of the affected detection beam corresponds to properties of the incident energy, wherein the properties include frequency and magnitude.

12. A sensor that senses incident energy, the sensor comprising:

a receiver capable of receiving incident energy;

a MEMS, wherein a first portion of the MEMS is electrically coupled to the receiver, wherein a second portion of the MEMS oscillates at a first frequency and a first magnitude when the received incident energy is below a first predetermined threshold, wherein the second portion of the MEMS oscillates at a second frequency and a second magnitude when the received incident energy is above a second predetermined threshold; and

a detection system including a detection source that applies a detection beam to the second portion of the MEMS, wherein the detection beam interacts with the second portion of the MEMS to thereby provide an affected detection beam, wherein a characteristic of the affected detection beam varies correspondingly to the oscillations of the MEMS, wherein the detection system further includes a detector that detects the varying characteristic of the affected detection beam, and wherein the detected varying characteristic of the affected detection beam is used to determine the received incident energy.

13. The sensor of claim 12, wherein the second frequency is a natural resonance frequency or harmonic thereof of the second portion of the MEMS, wherein the received incident energy and a reference signal are applied to the MEMS at different frequencies, wherein a combination of the different frequencies generate a beat frequency which corresponds to the natural resonance frequency or harmonic thereof of the MEMS element.

14. The sensor of claim 12, wherein the first predetermined threshold is zero.

15. The sensor of claim 12 further comprising an electrode which provides an electrical field to the MEMS.

16. The sensor of claim 15, wherein the electrical field corresponds to a direct current or a waveform.

17. The sensor of claim 15, wherein the oscillation of the MEMS creates a change in capacitance between the MEMS and the electrode.

18. The sensor of claim 15, wherein the oscillation of the MEMS generates a transfer of electrical charge to the electrode from the MEMS.

19. The sensor of claim 12, wherein the MEMS is a cantilever.

20. The sensor of claim 12, wherein the receiver is an antenna.

21. The sensor of claim 12, wherein the incident energy comprises radiation of the type selected from, the group consisting of electromagnetic, IR, visible light, UV, X-Ray, alpha, beta, gamma, neutron, nuclear, magnetic, and combinations thereof.

22. The sensor of claim 12, wherein the incident energy is in the gigahertz range or the terahertz range.

23. The sensor of claim 12 further comprising an aperture positioned between the second portion of the MEMS and the detector.

24. The sensor of claim 12, wherein the characteristic of the affected detection beam corresponds to properties of the incident energy, wherein the properties include frequency and magnitude.