×

Phase change memory devices and systems, and related programming methods

  • US 8,116,127 B2
  • Filed: 09/15/2009
  • Issued: 02/14/2012
  • Est. Priority Date: 04/06/2006
  • Status: Active Grant
First Claim
Patent Images

1. A method of writing data in a phase change memory cell in a memory, the memory comprising a plurality of phase change memory cells, and the method comprising:

  • receiving write data to be written to a selected phase change memory cell in the plurality of phase change memory cells;

    sensing data stored in the selected phase change memory cell;

    determining whether or not the sensed data is equal to the write data; and

    if the sensed data is not equal to the write data, iteratively applying a write current to the selected phase change memory cell, wherein a resistance state of the phase change memory cell is changed by heat corresponding to a level of the write current, and the level of the write current is changed between successive iterative applications.

View all claims
  • 0 Assignments
Timeline View
Assignment View
    ×
    ×