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Methods for fabricating current-carrying structures using voltage switchable dielectric materials

  • US 8,117,743 B2
  • Filed: 11/23/2010
  • Issued: 02/21/2012
  • Est. Priority Date: 08/27/1999
  • Status: Expired due to Fees
First Claim
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1. A method for fabricating a current-carrying formation, the method comprising:

  • providing a first voltage switchable dielectric (VSD) material having a first characteristic voltage;

    exposing the first VSD material to a first source of ions associated with a first electrically conductive material;

    creating a first voltage difference between the first source and the first voltage switchable dielectric material, the first voltage difference greater than the first characteristic voltage, and depositing at least a portion of the first electrically conductive material on the first VSD material to form a first current-carrying layer;

    exposing the first current-carrying layer to a second source of ions associated with a second electrically conductive material, creating a second voltage difference between the second source and the first current-carrying layer, the second voltage difference greater than the first characteristic voltage; and

    depositing at least a portion of the second electrically conductive material on at least a portion of the first current-carrying layer to form a second current-carrying layer.

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