Lower liner with integrated flow equalizer and improved conductance

• US 8,118,938 B2
• Filed: 07/27/2011
• Issued: 02/21/2012
• Est. Priority Date: 04/07/2008
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Carducci, James D., Nguyen, Andrew, Balakrishna, Ajit, Kutney, Michael C.
• Primary Examiner(s): Zervigon, Rudy
• Application Number:
  US13/191,850
• Publication Number:
  US 20110284166A1
• Time in Patent Office: 209 Days
• Field of Search: 118/715, 118/728, 118/50, 156/345.34, 156/345.51, 156/345.26
• US Class Current: 118/715
• CPC Class Codes: H01J 37/32082 Radio frequency generated discharge H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence
• CPC Class Codes: H01J 37/32495 Means for protecting the vessel against plasma
• CPC Class Codes: H01J 37/32623 Mechanical discharge control means
• CPC Class Codes: H01L 21/67069 for drying etching
• CPC Class Codes: Y10T 428/13 Hollow or container type article [e.g., tube, vase, etc.]

Abstract

A plasma processing chamber has a lower liner with an integrated flow equalizer. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. The integrated flow equalizer is configured to equalize the flow of the processing gases evacuated from the chamber via the lower liner.

Claims

1. An annular chamber liner for a plasma chamber, comprising:

a bottom wall;

an inner wall extending upwardly from the bottom wall; and

an outer wall extending upwardly and outwardly from the bottom wall,

wherein the annular chamber liner has a plurality of slots extending through the bottom and outer walls, and wherein the plurality of slots are arranged such that at least one slot is present within each quadrant of the annular chamber liner.

2. The annular chamber liner of claim 1, wherein one quadrant of the annular chamber liner has fewer slots than the other three quadrants.

3. The annular chamber liner of claim 1, wherein one quadrant of the annular chamber liner has a greater number of slots than the other three quadrants.

4. The annular chamber liner of claim 1, wherein one quadrant of the annular chamber liner has larger slots than the other three quadrants.

5. The annular chamber liner of claim 1, wherein one quadrant of the annular chamber liner has smaller slots than the other three quadrants.

6. An etching apparatus, comprising:

a chamber body;

a substrate support pedestal disposed in the chamber body;

a gas introduction showerhead disposed in the chamber opposite the substrate support;

an upper chamber liner disposed in the chamber body such that the substrate support pedestal, the gas introduction showerhead, and the first chamber liner at least partially enclose a processing area;

an annular baffle coupled to and surrounding the substrate support pedestal; and

a lower chamber liner, comprising;

a bottom wall;

an inner wall configured below the annular baffle and surrounding the substrate support pedestal; and

an outer wall sloping upwardly and outwardly from the bottom wall,

wherein the lower chamber liner has a slot formed therethrough and is disposed within the chamber body such that an annular plenum is defined between the bottom and outer walls of the lower chamber liner and a bottom and outer wall of the chamber body.

7. The apparatus of claim 6, wherein the plenum is in fluid communication with an exhaust port.

8. The apparatus of claim 6, wherein the lower chamber liner has a series of slots extending therethrough.

9. The apparatus of claim 8, wherein one quadrant of the lower chamber liner has fewer slots than the opposing quadrant.

10. The apparatus of claim 8, wherein one quadrant of the lower chamber liner has larger slots than the opposing quadrant.