Thin film transistor and method for fabricating the same
First Claim
1. A method of fabricating a thin film transistor, the method comprising:
- forming a gate on a substrate;
forming a gate insulation layer on the substrate to cover the gate;
forming an oxide semiconductor layer on the gate insulation layer;
forming a translucent layer on a partial region of the oxide semiconductor layer;
performing an optical annealing process to transform the oxide semiconductor layer into an oxide channel layer and two ohmic contact layers by using the translucent layer as a mask, wherein the oxide channel layer is located under the translucent layer, and the ohmic contact layers are respectively located beside the oxide channel layer and connected with the oxide channel layer; and
forming a source and a drain electrically insulated from each other on the gate insulation layer and the ohmic contact layers.
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Abstract
A method of fabricating a thin film transistor including: forming a gate on a substrate; forming a gate insulation layer on the substrate to cover the gate; forming an oxide semiconductor layer on the gate insulation layer; forming a translucent layer on a partial region of the oxide semiconductor layer; performing an optical annealing process to transform the oxide semiconductor layer into an oxide channel layer and two ohmic contact layers by using the translucent layer as a mask, where the oxide channel layer is located under the translucent layer, and the ohmic contact layers are respectively located beside the oxide channel layer and are connected with the oxide channel layer; and forming a source and a drain electrically insulated from each other on the gate insulation layer and the ohmic contact layers.
10 Citations
18 Claims
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1. A method of fabricating a thin film transistor, the method comprising:
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forming a gate on a substrate; forming a gate insulation layer on the substrate to cover the gate; forming an oxide semiconductor layer on the gate insulation layer; forming a translucent layer on a partial region of the oxide semiconductor layer; performing an optical annealing process to transform the oxide semiconductor layer into an oxide channel layer and two ohmic contact layers by using the translucent layer as a mask, wherein the oxide channel layer is located under the translucent layer, and the ohmic contact layers are respectively located beside the oxide channel layer and connected with the oxide channel layer; and forming a source and a drain electrically insulated from each other on the gate insulation layer and the ohmic contact layers. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of fabricating a thin film transistor, the method comprising:
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forming a gate on a substrate; forming a gate insulation layer on the substrate to cover the gate; forming a source and a drain electrically insulated from each other on the gate insulation layer; forming an oxide semiconductor layer on the gate insulation layer, the source, and the drain; forming a translucent layer on a partial region of the oxide semiconductor layer; and performing an optical annealing process to transform the oxide semiconductor layer into an oxide channel layer and two ohmic contact layers by using the translucent layer as a mask, wherein the oxide channel layer is located under the translucent layer, and the ohmic contact layers are respectively located beside the oxide channel layer and connected with the oxide channel layer. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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Specification
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- Resources
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Current AssigneeAU Optronics Corporation
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Original AssigneeAU Optronics Corporation
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InventorsSun, Ming-Wei, Lin, Wu-Hsiung
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Primary Examiner(s)Lee, Cheung
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Application NumberUS13/041,439Time in Patent Office351 DaysField of Search438/161, 438/608, 257/E21.046, 257/E21.062, 257/E21.37, 257/E21.4, 257/E21.457US Class Current438/151CPC Class CodesH01L 29/7869 having a semiconductor body...
