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Thin film transistor and method for manufacturing the same

  • US 8,119,468 B2
  • Filed: 04/14/2009
  • Issued: 02/21/2012
  • Est. Priority Date: 04/18/2008
  • Status: Expired due to Fees
First Claim
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1. A method for manufacturing a thin film transistor, the method comprising the steps of:

  • forming a gate electrode over a substrate having an insulating surface;

    forming a gate insulating layer over the gate electrode, the gate insulating layer comprising silicon nitride;

    exposing the gate insulating layer to plasma generated by a gas containing nitrogen;

    forming a semiconductor layer over the gate insulating layer by using a mixed gas comprising a semiconductor material gas and a nitrogen-containing gas, wherein a concentration of the nitrogen-containing gas is reduced during the formation of the semiconductor layer;

    forming source and drain regions over the semiconductor layer wherein the source and drain regions comprise a semiconductor and an impurity imparting one conductivity type to the semiconductor; and

    forming source and drain electrodes over the source and drain regions, respectively.

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