Display device including an opening formed in a gate insulating film, a passivation film, and a barrier film
First Claim
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1. A display device comprising:
- a semiconductor film;
a gate insulating film over the semiconductor film;
a first metal layer over the gate insulating film;
a first passivation film over the first metal layer;
a second metal layer over the first passivation film;
a flattening film over the second metal layer;
a barrier film over the flattening film; and
a third metal layer over the barrier film,wherein a side face of a first opening formed in the flattening film is covered by the barrier film,wherein the barrier film and the first passivation film are in contact with each other at a base of the first opening,wherein a second opening is formed in the gate insulating film, the first passivation film, and the barrier film at the base of the first opening,wherein the second opening is formed inside the first openingwherein the third metal layer is connected to the semiconductor film via the first opening and the second opening,wherein a first capacitor element comprises the semiconductor film, the gate insulating film, and the first metal layer, andwherein a second capacitor element comprises the first metal layer, the first passivation film, the barrier film, and the third metal layer.
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Abstract
A structure for preventing deteriorations of a light-emitting device and retaining sufficient capacitor elements (condenser) required by each pixel is provided. A first passivation film, a second metal layer, a flattening film, a barrier film, and a third metal layer are stacked in this order over a transistor. A side face of a first opening provided with the flattening film is covered by the barrier film, a second opening is formed inside the first opening, and a third metal layer is connected to a semiconductor via the first opening and the second opening. A capacitor element that is formed of a lamination of a semiconductor of a transistor, a gate insulating film, a gate electrode, the first passivation film, and the second metal layer is provided.
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Citations
30 Claims
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1. A display device comprising:
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a semiconductor film; a gate insulating film over the semiconductor film; a first metal layer over the gate insulating film; a first passivation film over the first metal layer; a second metal layer over the first passivation film; a flattening film over the second metal layer; a barrier film over the flattening film; and a third metal layer over the barrier film, wherein a side face of a first opening formed in the flattening film is covered by the barrier film, wherein the barrier film and the first passivation film are in contact with each other at a base of the first opening, wherein a second opening is formed in the gate insulating film, the first passivation film, and the barrier film at the base of the first opening, wherein the second opening is formed inside the first opening wherein the third metal layer is connected to the semiconductor film via the first opening and the second opening, wherein a first capacitor element comprises the semiconductor film, the gate insulating film, and the first metal layer, and wherein a second capacitor element comprises the first metal layer, the first passivation film, the barrier film, and the third metal layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. An electric appliance comprising a display device, the display device comprising:
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a semiconductor film; a gate insulating film over the semiconductor film; a first metal layer over the gate insulating film; a first passivation film over the first metal layer; a second metal layer over the first passivation film; a flattening film over the second metal layer; a barrier film over the flattening film; and a third metal layer over the barrier film, wherein a side face of a first opening formed in the flattening film is covered by the barrier film, wherein the barrier film and the first passivation film are in contact with each other at a base of the first opening, wherein a second opening is formed in the gate insulating film, the first passivation film, and the barrier film at the base of the first opening, wherein the second opening is formed inside the first opening, wherein the third metal layer is connected to the semiconductor film via the first opening and the second opening, wherein a first capacitor element comprises the semiconductor film, the gate insulating film, and the first metal layer, and wherein a second capacitor element comprises the first metal layer, the first passivation film, the barrier film, and the third metal layer. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. A display device comprising:
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a semiconductor film; a gate insulating film over the semiconductor film; a first metal layer over the gate insulating film; a first passivation film over the first metal layer; a second metal layer over the first passivation film; a flattening film over the second metal layer; a barrier film over the flattening film; and a third metal layer over the barrier film, wherein a side face of a first opening formed in the flattening film is covered by the barrier film, wherein the barrier film and the first passivation film are in contact with each other at a base of the first opening, wherein a second opening is formed in the gate insulating film, the first passivation film, and the barrier film at the base of the first opening, wherein the second opening is formed inside the first opening, wherein the third metal layer is connected to the semiconductor film via the first opening and the second opening, wherein a first capacitor element comprises the semiconductor film, the gate insulating film, and the first metal layer, wherein a second capacitor element comprises the first metal layer, the first passivation film, the barrier film, and the third metal layer, and wherein the flattening film is in contact with the barrier film. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28, 29, 30)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsYamazaki, Shunpei, Takayama, Toru, Murakami, Satoshi, Kimura, Hajime
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Primary Examiner(s)Nadav, Ori
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Application NumberUS11/882,146Publication NumberTime in Patent Office1,666 DaysField of Search257/59, 257/72, 257/637, 257/347US Class Current257/59CPC Class CodesG02F 1/133305 Flexible substrates, e.g. p...G02F 1/136277 formed on a semiconductor s...G02F 1/1368 in which the switching elem...H05B 33/04 Sealing arrangements , e.g....H10K 2102/3026 Top emissionH10K 50/84 Passivation; Containers; En...H10K 59/12 Active-matrix OLED [AMOLED]...H10K 59/1216 the pixel elements being ca...H10K 59/124 Insulating layers formed be...H10K 59/87 Passivation; Containers; En...
