Semiconductor element and display device using the same

• US 8,120,033 B2
• Filed: 07/21/2010
• Issued: 02/21/2012
• Est. Priority Date: 04/09/2002
• Status: Expired due to Term

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Murakami, Satoshi, Hayakawa, Masahiko, Yamazaki, Shunpei
• Primary Examiner(s): Parker, Kenneth
• Assistant Examiner(s): Ho, Anthony
• Application Number:
  US12/840,350
• Publication Number:
  US 20100283067A1
• Time in Patent Office: 580 Days
• Field of Search: 257/59, 257/72
• US Class Current: 257/59
• CPC Class Codes: G02F 1/133512 Light shielding layers, e.g. black matrix G02F1/136209 takes precedence
• CPC Class Codes: G02F 1/1337 Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
• CPC Class Codes: G02F 1/1339 Gaskets; Spacers; Sealing of cells
• CPC Class Codes: G02F 1/1341 Filling or closing of cells
• CPC Class Codes: G02F 1/13439 characterised by their electrical, optical, physical properties; materials therefor; method of making
• CPC Class Codes: G02F 1/136213 Storage capacitors associated with the pixel electrode
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer
• CPC Class Codes: G02F 1/136286 Wiring, e.g. gate line, drain line
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: G02F 2201/123 pixel
• CPC Class Codes: H01L 23/3171 the coating being directly applied to the semiconductor body, e.g. passivation layer H01L23/3178 takes precedence
• CPC Class Codes: H01L 23/49827 Via connections through the substrates, e.g. pins going through the substrate, coaxial cables H01L23/49822, H01L23/49833, H01L23/4985, H01L23/49861 take precedence
• CPC Class Codes: H01L 27/1218 with a particular composition or structure of the substrate
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 29/41733 for thin film transistors with insulated gate
• CPC Class Codes: H01L 29/42384 for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/66765 Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
• CPC Class Codes: H01L 29/786 Thin film transistors, i.e. transistors with a channel being at least partly a thin film transistors having only the source or the drain region on an insulator layer H01L29/0653; thin film FinFETs H01L29/785
• CPC Class Codes: H01L 29/78606 : with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device H01L29/78642, H01L29/78645 take precedence
• CPC Class Codes: H01L 29/78651 : Silicon transistors H01L29/78606 - H01L29/78645 take precedence
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 : Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H10K 2102/3026 : Top emission
• CPC Class Codes: H10K 2102/311 : Flexible OLED
• CPC Class Codes: H10K 59/123 : Connection of the pixel electrodes to the thin film transistors [TFT]
• CPC Class Codes: H10K 59/124 : Insulating layers formed between TFT elements and OLED elements
• CPC Class Codes: H10K 59/131 : Interconnections, e.g. wiring lines or terminals
• CPC Class Codes: Y10S 438/95 : Multilayer mask including nonradiation sensitive layer

Abstract

Provided is a semiconductor element including: a semiconductor having an active layer; a gate insulating film which is in contact with the semiconductor; a gate electrode opposite to the active layer through the gate insulating film; a first nitride insulating film formed over the active layer; a photosensitive organic resin film formed on the first nitride insulating film; a second nitride insulating film formed on the photosensitive organic resin film; and a wiring provided on the second nitride insulating film, in which a first opening portion is provided in the photosensitive organic resin film, an inner wall surface of the first opening portion is covered with the second nitride insulating film, a second opening portion is provided in a laminate including the gate insulating film, the first nitride insulating film, and the second nitride insulating film inside the first opening portion, and the semiconductor is connected with the wiring through the first opening portion and the second opening portion.

Claims

1. A display device comprising:

a capacitor comprising;

a first electrode; and

a second electrode;

a thin film transistor comprising;

an island-like semiconductor film;

a gate insulating film in contact with the island-like semiconductor film;

a gate electrode in contact with the gate insulating film;

a first nitride insulating film covering the thin film transistor;

a photosensitive organic resin film over and in contact with the first nitride insulating film, the photosensitive organic resin film having a first opening portion and a second opening portion;

a second nitride insulating film over and in contact with the photosensitive organic resin film, the second nitride insulating film having a third opening portion and a fourth opening portion overlapped with the first opening portion; and

a third electrode over the second nitride insulating film, the third electrode is electrically connected to the island-like semiconductor film,

wherein the capacitor comprises a part of the first nitride insulating film and a part of the second nitride insulating film which are overlapped with the first electrode and the second electrode in the second opening portion,

wherein the first electrode is formed from a same layer as the gate electrode,

wherein the second electrode is formed from a same layer as the third electrode,

wherein a curvature radius of a part of a surface of the photosensitive organic resin film is continuously changed in the first opening portion, and

wherein a curvature radius of a part of the surface of the photosensitive organic resin film is continuously changed in the second opening portion.

2. The display device according to claim 1, wherein the third electrode is a pixel electrode comprising an oxide conductive film.

3. The display device according to claim 1, wherein the first opening portion and the second opening portion are formed by exposure and development.

4. The display device according to claim 1, wherein each of the first nitride insulating film and the second nitride insulating film is one selected from the group consisting of a silicon nitride film, a silicon nitride oxide film, a silicon oxynitride film, an aluminum nitric oxide film, and an aluminum oxynitride film.

5. The display device according to claim 1, wherein the second nitride insulating film is a silicon nitride film formed by a sputtering method using a high frequency discharge.

6. The display device according to claim 1, further comprising an electroluminescence element including a metal film added with lithium as an electrode.

7. The display device according to claim 1, further comprising an electroluminescence element including a pixel electrode electrically connected to the third electrode,

wherein an end portion of the pixel electrode is covered with the photosensitive organic resin film, and

wherein a surface of the photosensitive organic resin film is covered with a third nitride insulating film.

8. The display device according to claim 7, wherein the third nitride insulating film is a silicon nitride film formed by a sputtering method using a high frequency discharge.

9. An electronics employing the display device according to claim 1, wherein the electronics is one selected from the group consisting of a video camera, a digital camera, a goggle type display, a navigation system, an audio reproducing apparatus, a laptop computer, a game machine, a portable information terminal, an image reproducing apparatus, a television, and a cellular phone.

10. A display device comprising:

a capacitor comprising;

a first electrode; and

a second electrode;

a thin film transistor comprising;

an island-like semiconductor film;

a gate insulating film in contact with the island-like semiconductor film;

a gate electrode in contact with the gate insulating film;

a first nitride insulating film covering the thin film transistor;

a photosensitive organic resin film over and in contact with the first nitride insulating film, the photosensitive organic resin film having a first opening portion and a second opening portion;

a second nitride insulating film over and in contact with the photosensitive organic resin film, the second nitride insulating film having a third opening portion and a fourth opening portion overlapped with the first opening portion; and

a third electrode over the second nitride insulating film, the third electrode is electrically connected to the island-like semiconductor film,

wherein the capacitor comprises a part of the first nitride insulating film and a part of the second nitride insulating film which are overlapped with the first electrode and the second electrode in the second opening portion,

wherein the first electrode is formed from a same layer as the gate electrode,

wherein the second electrode is formed from a same layer as the third electrode,

wherein a curvature radius of a surface of the photosensitive organic resin film continuously increases in a direction from a bottom portion of the first opening portion to a top portion of the first opening portion, and

wherein a curvature radius of a surface of the photosensitive organic resin film continuously increases from a bottom portion of the second opening portion to a top portion of the second opening portion.

11. The display device according to claim 10, wherein the third electrode is a pixel electrode comprising an oxide conductive film.

12. The display device according to claim 10, wherein the first opening portion and the second opening portion are formed by exposure and development.

13. The display device according to claim 10, wherein each of the first nitride insulating film and the second nitride insulating film is one selected from the group consisting of a silicon nitride film, a silicon nitride oxide film, a silicon oxynitride film, an aluminum nitric oxide film, and an aluminum oxynitride film.

14. The display device according to claim 10, wherein the second nitride insulating film is a silicon nitride film formed by a sputtering method using a high frequency discharge.

15. The display device according to claim 10, further comprising an electroluminescence element including a metal film added with lithium as an electrode.

16. The display device according to claim 10, further comprising an electroluminescence element including a pixel electrode electrically connected to the third electrode,

wherein an end portion of the pixel electrode is covered with the photosensitive organic resin film, and

wherein a surface of the photosensitive organic resin film is covered with a third nitride insulating film.

17. The display device according to claim 16, wherein the third nitride insulating film is a silicon nitride film formed by a sputtering method using a high frequency discharge.

18. An electronics employing the display device according to claim 10, wherein the electronics is one selected from the group consisting of a video camera, a digital camera, a goggle type display, a navigation system, an audio reproducing apparatus, a laptop computer, a game machine, a portable information terminal, an image reproducing apparatus, a television, and a cellular phone.

19. A semiconductor device comprising:

a thin film transistor;

a first nitride insulating film over the thin film transistor;

a photosensitive organic resin film over the first nitride insulating film, the photosensitive organic resin film having a first opening portion;

a second nitride insulating film over the photosensitive organic resin film and covering an inner wall surface of the first opening portion; and

an electrode over the second nitride insulating film,

wherein a part of the first nitride insulating film is in contact with a part of the second nitride insulating film in a bottom portion of the first opening portion,

wherein a second opening portion is provided in the first nitride insulating film and the second nitride insulating film inside the first opening portion,

wherein the electrode is electrically connected to a semiconductor film included in the thin film transistor, and

wherein a curvature radius of the inner wall surface of the photosensitive organic resin film continuously increases in a direction from a bottom portion of the first opening portion to a top portion of the first opening portion.

20. The semiconductor device according to claim 19, wherein the electrode is a pixel electrode comprising an oxide conductive film.

21. The semiconductor device according to claim 19, wherein the first opening portion is formed by exposure and development.

22. The semiconductor device according to claim 19, wherein each of the first nitride insulating film and the second nitride insulating film is one selected from the group consisting of a silicon nitride film, a silicon nitride oxide film, a silicon oxynitride film, an aluminum nitric oxide film, and an aluminum oxynitride film.

23. The semiconductor device according to claim 19, wherein the second nitride insulating film is a silicon nitride film formed by a sputtering method using a high frequency discharge.

24. The semiconductor device according to claim 19, further comprising an electroluminescence element including a metal film added with lithium as an electrode.

25. The semiconductor device according to claim 19, further comprising an electroluminescence element including a pixel electrode electrically connected to the electrode,

wherein an end portion of the pixel electrode is covered with the photosensitive organic resin film, and

wherein a surface of the photosensitive organic resin film is covered with a third nitride insulating film.

26. The semiconductor device according to claim 25, wherein the third nitride insulating film is a silicon nitride film formed by a sputtering method using a high frequency discharge.

27. A display device comprising the semiconductor device according to claim 19 in a pixel portion.

28. An electronics employing the semiconductor device according to claim 19, wherein the electronics is one selected from the group consisting of a video camera, a digital camera, a goggle type display, a navigation system, an audio reproducing apparatus, a laptop computer, a game machine, a portable information terminal, an image reproducing apparatus, a television, and a cellular phone.

29. A semiconductor device comprising:

a thin film transistor;

a first nitride insulating film over the thin film transistor;

a photosensitive organic resin film over the first nitride insulating film, the photosensitive organic resin film having a first opening portion;

a second nitride insulating film over the photosensitive organic resin film and covering an inner wall surface of the first opening portion; and

an electrode over the second nitride insulating film,

wherein a part of the first nitride insulating film is in contact with a part of the second nitride insulating film in a bottom portion of the first opening portion,

wherein a second opening portion is provided in the first nitride insulating film and the second nitride insulating film inside the first opening portion,

wherein the electrode is electrically connected to a semiconductor film included in the thin film transistor, and

wherein a curvature radius of the inner wall surface of the photosensitive organic resin film continuously increases in a direction from a bottom portion of the first opening portion to a top portion of the first opening portion in a range of 3 μ

m to 30 μ

m.

30. The semiconductor device according to claim 29, wherein the electrode is a pixel electrode comprising an oxide conductive film.

31. The semiconductor device according to claim 29, wherein the first opening portion is formed by exposure and development.

32. The semiconductor device according to claim 29, wherein each of the first nitride insulating film and the second nitride insulating film is one selected from the group consisting of a silicon nitride film, a silicon nitride oxide film, a silicon oxynitride film, an aluminum nitric oxide film, and an aluminum oxynitride film.

33. The semiconductor device according to claim 29, wherein the second nitride insulating film is a silicon nitride film formed by a sputtering method using a high frequency discharge.

34. The semiconductor device according to claim 29, further comprising an electroluminescence element including a metal film added with lithium as an electrode.

35. The semiconductor device according to claim 29, further comprising an electroluminescence element including a pixel electrode electrically connected to the electrode,

wherein an end portion of the pixel electrode is covered with the photosensitive organic resin film, and

wherein a surface of the photosensitive organic resin film is covered with a third nitride insulating film.

36. The semiconductor device according to claim 35, wherein the third nitride insulating film is a silicon nitride film formed by a sputtering method using a high frequency discharge.

37. A display device comprising the semiconductor device according to claim 29 in a pixel portion.

38. An electronics employing the semiconductor device according to claim 29, wherein the electronics is one selected from the group consisting of a video camera, a digital camera, a goggle type display, a navigation system, an audio reproducing apparatus, a laptop computer, a game machine, a portable information terminal, an image reproducing apparatus, a television, and a cellular phone.