Multi-chips with an optical interconnection unit

• US 8,120,044 B2
• Filed: 04/14/2008
• Issued: 02/21/2012
• Est. Priority Date: 11/05/2007
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Cho, Soo-haeng, Ha, Kyoung-ho, Ryu, Han-youl, Suh, Sung-dong, Kim, Seong-gu, Min, Bok-ki
• Primary Examiner(s): Richards, N Drew
• Assistant Examiner(s): WITHERS, GRANT S
• Application Number:
  US12/081,277
• Publication Number:
  US 20090114927A1
• Time in Patent Office: 1,408 Days
• Field of Search: 257 80- 82, 257/88, 257/98, 257/99, 257290-292, 257/E31.097, 257/E31.101, 257/E31.095, 257/E25.004, 257/E25.006, 250/214.1, 385/31, 385/32, 385/33, 385/39
• US Class Current: 257/82
• CPC Class Codes: G02B 6/43 Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections
• CPC Class Codes: H01L 2224/05554 being square
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/49175 Parallel arrangements
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00

Abstract

A multi-chip having an optical interconnection unit is provided. The multi-chip having an optical interconnection unit includes a plurality of silicon chips sequentially stacked, a plurality of optical device arrays on a side of each of the plurality of the silicon chips such that the optical device arrays correspond to each other and a wiring electrically connecting the silicon chip and the optical device array attached to a side of the silicon chip, wherein the corresponding optical device arrays forms an optical connection unit by transmitting and receiving an optical signal between the corresponding optical device arrays in different layers. Each of the optical device arrays includes at least one of a light emitting device and a light receiving device.

Claims

1. A multi-chip having an optical interconnection unit, comprising:

a plurality of silicon chips sequentially stacked;

a plurality of optical device arrays individually at a lateral side of one of the plurality of the silicon chips such that each of the plurality of the optical device arrays corresponds to one of the plurality of the silicon chips, wherein each of the plurality of the optical device arrays includes at least one of a light emitting device and a light receiving device, the light-emitting device and the light receiving device correspond to each other and are arranged vertically on different optical device arrays of the plurality of optical device arrays; and

a wiring electrically connecting each of the silicon chips to the optical device array on the lateral side thereof,

wherein the corresponding light-emitting device and light-receiving device vertically transmit an optical signal between each other to form the optical interconnection unit, and

the corresponding silicon chips and optical device arrays are separately disposed side-by-side.

2. The multi-chip of claim 1, wherein the plurality of optical device arrays are individually attached to the lateral side of the respective silicon chip.

3. The multi-chip of claim 2, further comprising a focusing lens on a surface of the light emitting device.

4. The multi-chip of claim 2, wherein the light emitting device is a vertical cavity surface emitting laser (VCSEL).

5. The multi-chip of claim 2, wherein the wiring is a wire or a solder bonding.

6. The multi-chip of claim 2, wherein the optical device arrays include a group III-V semiconductor compound.

7. The multi-chip of claim 1, wherein the plurality of optical device arrays are individually formed on the lateral side of the respective silicon chip.

8. The multi-chip of claim 7, wherein the light receiving device is a p-n junction photodiode formed in a silicon substrate extended from the corresponding silicon chip.

9. The multi-chip of claim 8, wherein the light emitting device is a vertical cavity surface emitting laser (VCSEL).

10. The multi-chip of claim 8, wherein the light emitting device, corresponding to the p-n junction photodiode, emits light having a wavelength of 1 μ

m or less.

11. The multi-chip of claim 10, wherein the p-n junction photodiode is formed of a group III-V semiconductor compound.

12. The multi-chip of claim 7, further comprising a focusing lens on a surface of the light emitting device.

13. The multi-chip of claim 7, wherein a light emitting device of a first optical device array corresponds to a light receiving device of a second optical device array, and

the light emitting device of the first optical device array emits a light having a wavelength of 1.2 μ

m or greater and the light receiving device includes a group III-V semiconductor compound.