Method and structure of monolithically integrated infrared sensing device
First Claim
1. An integrated imager and CMOS integrated circuit device comprising:
- a semiconductor substrate having a surface region;
a CMOS integrated circuit device region overlying the surface region;
a dielectric material overlying the CMOS integrated circuit device region;
one or more infrared (IR) sensing devices overlying the dielectric material, the IR sensing device(s) being coupled to the CMOS integrated circuit device region, the IR sensing device(s) each having a sensing plate supported by a pair of springs, wherein the sensing plate comprises a top layer and a bottom layer, the top layer comprising a CCD or CMOS imaging element that senses visible wavelengths; and
one or more micro lens devices coupled to the one or more IR sensing devices.
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Abstract
Protection for infrared sensing device, and more particularly, to a monolithically integrated uncooled infrared sensing device using IC foundry compatible processes. The proposed infrared sensing device is fabricated on a completed IC substrate. In an embodiment, the infrared sensing device has a single crystal silicon plate with an absorbing layer supported a pair of springs. The absorbing layer absorbs infrared radiation and heats up the underlying silicon layer. As a result, an n well in the silicon layer changes its resistance related to its temperature coefficient of resistance (TCR). In another embodiment, the infrared sensing device has a top sensing plate supported by an underlying spring structures. The top sensing plate has sensing materials such as amorphous silicon, poly silicon, SiC, SiGe, Vanadium oxide, or YbaCuO. Finally, a micro lens array is placed on top of the sensing pixel array with a gap in between. In an embodiment, the micro lens array is fabricated on a silicon substrate and bonded to the sensing pixel array substrate. In another embodiment, the micro lens array is fabricated monolithically using amorphous silicon. The micro lens array layer encapsulates the pixel sensing array hermetically, preferably in a vacuum environment.
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Citations
7 Claims
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1. An integrated imager and CMOS integrated circuit device comprising:
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a semiconductor substrate having a surface region; a CMOS integrated circuit device region overlying the surface region; a dielectric material overlying the CMOS integrated circuit device region; one or more infrared (IR) sensing devices overlying the dielectric material, the IR sensing device(s) being coupled to the CMOS integrated circuit device region, the IR sensing device(s) each having a sensing plate supported by a pair of springs, wherein the sensing plate comprises a top layer and a bottom layer, the top layer comprising a CCD or CMOS imaging element that senses visible wavelengths; and one or more micro lens devices coupled to the one or more IR sensing devices. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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Specification