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Semiconductor device and manufacturing method of the same

  • US 8,120,118 B2
  • Filed: 11/10/2010
  • Issued: 02/21/2012
  • Est. Priority Date: 02/28/2008
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising a first conductivity type semiconductor element and a second conductivity type semiconductor element different from each other in conductivity type and aligned with each other,wherein the first conductivity type semiconductor element comprises:

  • a first element-added insulating layer placed over a semiconductor substrate, having insulation properties, and containing a first element and a second element different therefrom; and

    an element-added conductive layer placed over the first element-added insulating layer, having conductivity, and containing the second element, andwherein the second conductivity type semiconductor element comprises;

    a second element-added insulating layer aligned with the first element-added insulating layer over the semiconductor substrate over which the first element-added insulating layer is placed, having insulation properties, and containing the first element;

    and an electrode conductive layer placed over the second element-added insulating layer and having conductivity.

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