Semiconductor device and manufacturing method of the same

• US 8,120,118 B2
• Filed: 11/10/2010
• Issued: 02/21/2012
• Est. Priority Date: 02/28/2008
• Status: Active Grant

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: Renesas Electronics Corporation
• Inventors: Sakashita, Shinsuke, Kawahara, Takaaki, Yugami, Jiro
• Primary Examiner(s): STARK, JARRETT J
• Application Number:
  US12/943,600
• Publication Number:
  US 20110057265A1
• Time in Patent Office: 468 Days
• Field of Search: None
• US Class Current: 257/369
• CPC Class Codes: H01L 21/823842 gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures

Abstract

Provided is a highly reliable semiconductor device equipped with a plurality of semiconductor elements having desired properties, respectively; and a manufacturing method facilitating the manufacture of the semiconductor device. The semiconductor device is manufactured by forming a gate-electrode metal film having a thickness of from 3 to 30 nm over the entire upper surface of a gate insulating film; forming an n-side cap layer having a thickness of 10 nm or less over the entire upper surface of a portion of the gate-electrode metal film belonging to an nFET region by using a material different from that of the gate-electrode metal film; and carrying out heat treatment over the n-side cap layer to diffuse the material of the n-side cap layer into the gate-electrode metal film immediately below the n-side cap layer and react them to form an n-side gate-electrode metal film in a nFET region. A poly-Si layer is then deposited, followed by gate electrode processing.

Claims

1. A semiconductor device comprising a first conductivity type semiconductor element and a second conductivity type semiconductor element different from each other in conductivity type and aligned with each other,

wherein the first conductivity type semiconductor element comprises:

a first element-added insulating layer placed over a semiconductor substrate, having insulation properties, and containing a first element and a second element different therefrom; and

an element-added conductive layer placed over the first element-added insulating layer, having conductivity, and containing the second element, and

wherein the second conductivity type semiconductor element comprises;

a second element-added insulating layer aligned with the first element-added insulating layer over the semiconductor substrate over which the first element-added insulating layer is placed, having insulation properties, and containing the first element;

and an electrode conductive layer placed over the second element-added insulating layer and having conductivity.

2. The semiconductor device according to claim 1, wherein the first conductivity type semiconductor element further comprises, over the element-added conductive layer, another element-added conductive layer having conductivity and containing the second element or an upper conductive layer having conductivity and containing a material different from that of the element-added conductive layer.

3. A semiconductor device comprising a first conductivity type semiconductor element and a second conductivity type semiconductor element different from each other in conductivity type and aligned with each other,

wherein the first conductivity type semiconductor element comprises:

a first element-added insulating layer placed over a semiconductor substrate, having insulation properties, and containing a first element and a second element different therefrom; and

a first element-added conductive layer placed over the first element-added insulating layer, having conductivity, and containing the second element, and

wherein the second conductivity type semiconductor element comprises;

a second element-added insulating layer aligned with the first element-added insulating layer over the semiconductor substrate over which the first element-added insulating layer is placed, having insulation properties, and containing the first element;

an electrode conductive layer placed over the second element-added insulating layer and having conductivity,

a second element-added conductive layer placed over the electrode conductive layer, having conductivity, and containing the second element; and

another second element-added conductive layer placed over the second element-added conductive layer, having conductivity, and containing the second element.

4. A semiconductor device comprising a first conductivity type semiconductor element and a second conductivity type semiconductor element different from each other in conductivity type and aligned with each other,

wherein the first conductivity type semiconductor element comprises:

a first element-added insulating layer placed over a semiconductor substrate, having insulation properties, and containing a first element and a second element different therefrom; and

a first element-added conductive layer placed over the first element-added insulating layer, having conductivity, and containing the second element; and

wherein the second conductivity type semiconductor element comprises;

a second element-added insulating layer aligned with the first element-added insulating layer over the semiconductor substrate over which the first element-added insulating layer is placed, having insulation properties, and containing the first element;

an electrode conductive layer placed over the second element-added insulating layer and having conductivity; and

a second element-added conductive layer placed over the electrode conductive layer, having conductivity, and containing the second element.

5. A semiconductor device comprising a first conductivity type semiconductor element and a second conductivity type semiconductor element different from each other in conductivity type and aligned with each other,

wherein the first conductivity type semiconductor element comprises:

a first element-added insulating layer placed over a semiconductor substrate, having insulation properties, and containing a first element and a second element different therefrom; and

a first element-added conductive layer placed over the first element-added insulating layer, having conductivity, and containing the second element; and

wherein the second conductivity type semiconductor element comprises;

a second element-added insulating layer aligned with the first element-added insulating layer over the semiconductor substrate over which the first element-added insulating layer is placed, having insulation properties, and containing the first element;

an electrode conductive layer placed over the second element-added insulating layer and having conductivity; and

an upper conductive layer placed over the electrode conductive layer, having conductivity, and containing a material different from the material of the electrode conductive layer.