Transistor
First Claim
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1. A transistor device comprising:
- a cell array formed in a silicon substrate having a surface with at least two active transistor cells, wherein trenches of the transistor cells are separated by a pitch;
a temperature sensor proximate to the cell array and having an isolation structure configured to electrically isolate the temperature sensor from the cell array, the isolation structure having an isolation trench;
wherein a distance between the temperature sensor and at least one of the active transistor cells that is closest to the temperature sensor corresponds approximately to the pitch between the trenches of the active transistor cells within the cell array; and
wherein the temperature sensor is formed in a portion of or below the surface of the silicon substrate.
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Abstract
A transistor has a cell array with two or more transistor cells, a temperature sensor, which is integrated in the cell array or is adjacent to the cell array, and an isolation structure. The isolation structure isolates the temperature sensor from the cell array, and has an isolation trench, which is arranged between the cell array and the temperature sensor. The distance between the temperature sensor and the active transistor cell that is closest to the temperature sensor corresponds approximately to the pitch between active transistor cells within the cell array.
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Citations
23 Claims
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1. A transistor device comprising:
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a cell array formed in a silicon substrate having a surface with at least two active transistor cells, wherein trenches of the transistor cells are separated by a pitch; a temperature sensor proximate to the cell array and having an isolation structure configured to electrically isolate the temperature sensor from the cell array, the isolation structure having an isolation trench; wherein a distance between the temperature sensor and at least one of the active transistor cells that is closest to the temperature sensor corresponds approximately to the pitch between the trenches of the active transistor cells within the cell array; and wherein the temperature sensor is formed in a portion of or below the surface of the silicon substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A transistor device comprising:
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a cell array formed in a silicon substrate having a surface and with at least two active transistor cells, wherein trenches of the transistor cells are separated by a pitch; and a temperature sensor proximate to the cell array and comprising an isolation structure with two isolation trenches; wherein the isolation structure is configured to electrically isolate the temperature sensor from the cell array; wherein a distance between the temperature sensor and at least one of the active transistor cells that is closest to the temperature sensor corresponds approximately to the pitch between active transistor cells within the cell array; wherein a distance between the two isolation trenches of the isolation structure is greater than the pitch between the trenches of the active transistor cells within the cell array; and wherein the temperature sensor is formed in a portion of or below the surface of the silicon substrate.
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15. A transistor component comprising:
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a semiconductor body in which at least two transistors that are arranged parallel to one another are formed, wherein each transistor includes at least two trenches; and isolation structures configured to electrically isolate the transistors from one another; wherein the isolation structures each have an isolation trench other than the at least two trenches of each transistor; and wherein a distance between at least one of the isolation trenches and one of the transistors corresponds approximately to a pitch between the trenches of the transistor. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22, 23)
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Specification