High resoultion digital imaging apparatus

• US 8,120,683 B1
• Filed: 04/06/2000
• Issued: 02/21/2012
• Est. Priority Date: 04/08/1999
• Status: Expired due to Fees

• Current Assignee: Nova R&D Incorporated (Kromek Group PLC)
• Original Assignee: Nova R&D Incorporated (Kromek Group PLC)
• Inventors: Tumer, Tumay O, Yaffe, Martin, Yin, Shi, Maeding, Dale G., Asbrock, James, Mawdsley, Gordon, Mainprize, James
• Primary Examiner(s): Tran, Nhan T
• Application Number:
  US09/544,561
• Time in Patent Office: 4,338 Days
• Field of Search: 348/295, 250/370.09
• US Class Current: 348/295
• CPC Class Codes: H01L 27/14634 Assemblies, i.e. Hybrid structures
• CPC Class Codes: H01L 27/14659 Direct radiation imagers structures
• CPC Class Codes: H01L 27/14661 of the hybrid type
• CPC Class Codes: H01L 27/14676 X-ray, gamma-ray or corpuscular radiation imagers measuring X-, gamma- or corpuscular radiation G01T1/00
• CPC Class Codes: H01L 27/1469 Assemblies, i.e. hybrid integration
• CPC Class Codes: H04N 23/30 for generating image signals from X-rays
• CPC Class Codes: H04N 25/71 Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
• CPC Class Codes: H04N 5/32 Transforming X-rays cameras or camera modules for generating image signals from X-rays H04N23/30; circuitry of SSIS for transforming X-rays into image signals H04N25/30

Abstract

An integrated application specific integrated circuit having a detection layer, a time delayed integration capability, data acquisition electronics, and a readout function is provided for detecting breast cancer in women. The detection layer receives x-ray radiation and converts the received energy to electron pairs, one of which is received by pixels. The time delay integration is on the chip and a part of the readout architecture. The detector may be a hybrid silicon detector (SiPD), a CdZnTe detector, or a GaAs detector.

Claims

1. An imaging detector comprising:

a plurality of detector pixels coupled to a plurality of readout channels, wherein at least one readout channel of said plurality of readout channels receives at least one charge signal from at least one pixel of said plurality of detector pixels, and wherein said at least one readout channel comprises;

at least one input directly connected to said at least one pixel;

at least one capacitor connected to said at least one input, wherein said at least one capacitor directly receives and accumulates said at least one charge signal from said at least one input; and

at least one time delayed integration system connected to said at least one capacitor, wherein said at least one time delayed integration system sums said accumulated at least one charge signal with at least one other accumulated charge signal from at least one pixel of said plurality of detector pixels to produce at least one readout signal.

2. The imaging detector of claim 1, wherein said at least one charge signal is integrated in said at least one readout channel.

3. The imaging detector of claim 1, wherein said accumulated said at least one charge signal is transferred to at least one other said at least one capacitor at least one time before said at least one readout signal is produced.

4. The imaging detector of claim 3, wherein time delayed integration is performed.

5. The imaging detector of claim 1, wherein said plurality of readout channels are divided into at least one group and at least one channel of said at least one group is connected to at least one output.

6. The imaging detector of claim 5, wherein time delayed integration is performed within said at least one group and at least one output of said at least one group is added together with said at least one output of at least one other said at least one group to form an image.

7. The imaging detector of claim 5, wherein each said at least one group uses time delayed integration.

8. The imaging detector of claim 1, wherein said plurality of detector pixels are connected directly to said plurality of readout channels using at least one conductive bump bond.

9. The imaging detector of claim 1, wherein said readout channel is coupled to an adjacent said readout channel in opposite direction to scan direction through a charge transfer circuit.

10. The imaging detector of claim 1, wherein at least one detector material is deposited on top of said readout channels of said imaging detector and said at least one detector material makes electrical contact directly with said readout channels.

11. The imaging detector of claim 1, wherein the side opposite to the side of the detector with plurality of pixels contains a conductive system to supply bias voltage.

12. The imaging detector of claim 1, wherein said at least one charge signal is produced by particles selected from the group consisting of photons, electrons, x-rays and gamma rays.

13. The imaging detector of claim 1, wherein at least one x-ray source is placed at a distance to at least one said imaging detector to produce at least one x-ray beam directed towards said at least one imaging detector.

14. The imaging detector of claim 13, wherein said at least one imaging detector and said at least one x-ray source are moved to scan at least one object placed in between said at least one x-ray source and said at least one imaging detector.

15. The imaging detector of claim 14, wherein said at least one readout channel is coupled to an adjacent said at least one readout channel in the scan direction using a charge coupled device (CCD) circuit.

16. The imaging detector of claim 15, wherein a clock signal transfers said at least one charge signal from at least one readout channel to an adjacent said at least one readout channel which is synchronized to the motion of said imaging detector.

17. The imaging detector of claim 1, wherein said plurality of readout channels and said plurality of detector pixels are made in two dimensions.

18. The imaging detector of claim 17, wherein sizes and dimensions of said plurality of readout channels and said plurality of detector pixels match.

19. The imaging detector of claim 1, wherein said accumulated at least one charge signal is transferred using at least one charge transfer method.

20. An imaging detector array made from a plurality of pixel detectors placed adjacent to each other, wherein each pixel detector comprises:

a plurality of detector pixels coupled to a plurality of readout channels, wherein at least one readout channel of said plurality of readout channels receives at least one charge signal from at least one pixel of said plurality of detector pixels, and wherein said at least one readout channel comprises;

at least one input directly connected to said at least one pixel;

at least one capacitor connected to said at least one input, wherein said at least one capacitor directly receives and accumulates said at least one charge signal; and

at least one time delayed integration system connected to said at least one capacitor, wherein said at least one time delayed integration system sums said accumulated at least one charge signal with at least one other accumulated charge signal from at least one pixel of said plurality of detector pixels to produce at least one readout signal.

21. The imaging detector array of claim 20, wherein said at least one charge signal is integrated in said at least one readout channel.

22. The imaging detector array of claim 20, wherein said accumulated said at least one charge signal is transferred to at least one other said at least one capacitor at least one time before said at least one readout signal is produced.

23. The imaging detector array of claim 22, wherein time delayed integration is performed.

24. The imaging detector array of claim 20, wherein said plurality of readout channels are divided into groups and a last channel of each group is connected to at least one of said at least one output.

25. The imaging detector array of claim 20, wherein said plurality of pixel detectors are mounted on at least one surface and said at least one surface is selected from the group consisting of flat and curved surfaces.

26. The imaging detector array of claim 20, wherein at least one image of at least one object is produced by placing said at least one object in between at least one said imaging detector array and at least one x-ray source.

27. The imaging detector array of claim 20, wherein at least one said pixel detector placed at an angle to at least one other said pixel detector to form a curved imaging detector array.

28. The imaging detector of claim 20, wherein said at least one charge signal is produced by particles selected from the group consisting of photons, electrons, x-rays and gamma rays.

29. The imaging detector array of claim 20, wherein at least one x-ray source is placed at a distance to at least one said imaging detector array to produce at least one x-ray beam directed towards said at least one imaging detector array.

30. The imaging detector array of claim 29, wherein said at least one imaging detector array and said at least one x-ray source are moved to scan at least one object placed in between said at least one x-ray source and said at least one imaging detector array.

31. The imaging detector array of claim 30, wherein said at least one readout channel is coupled to an adjacent said at least one readout channel in the scan direction using a charge coupled device (CCD) circuit.

32. The imaging detector array of claim 31, wherein a clock signal transfers said at least one charge signal from at least one readout channel to an adjacent said at least one readout channel which is synchronized to the motion of said imaging detector array.

33. A scanning detector system comprising:

at least one source of a plurality of particles;

at least one pixel detector positioned to receive and convert said plurality of particles from said at least one source of particles into a plurality of electrical signals, wherein said at least one pixel detector comprises;

at least one two-dimensional integrated circuit with plurality of inputs;

at least one input of said plurality of inputs is directly connected to at least one detector pixel of said at least one pixel detector;

at least one capacitor connected to said at least one input, wherein said at least one capacitor directly receives and accumulates at least one charge signal from said at least one detector pixel;

at least one time delayed integration system connected to said at least one capacitor, wherein said at least one time delayed integration system sums said accumulated at least one charge signal with at least one other accumulated charge signal from at least one detector pixel of said at least one pixel detector to produce at least one readout signal; and

at least one processing system that receives said at least one readout signal and produces at least one image.

34. The imaging detector of claim 33, wherein said plurality of particles are selected from the group consisting of photons, electrons, x-rays and gamma rays.

35. An imaging detector comprising:

at least one integrated circuit with at least one input;

wherein at least one detector material is deposited on top of said at least one input;

wherein at least one input receives at least one charge signal from said at least one detector material;

wherein at least one circuit directly coupled to said at least one input receives and accumulates said at least one charge signal; and

wherein at least one time delayed integration circuit is connected to at least one capacitor, wherein said at least one time delayed integration circuit sums said accumulated at least one charge signal with at least one other accumulated charge signal from said at least one detector material inside said at least one two-dimensional integrated circuit and produces at least one readout signal.

36. The imaging detector of claim 35, wherein said at least one detector material is selected from the group consisting of Silicon, Selenium, CdTe, CdZnTe, GaAs, PbI₂, and HgI₂.

37. An imaging detector comprising:

at least one integrated circuit with a plurality of inputs;

wherein at least one detector material is bump bonded on top of said plurality of inputs using a plurality of bump bonds;

wherein said at least one detector material makes electrical contact with said plurality of inputs through said plurality of bump bonds;

wherein at least one input of said plurality of inputs receives at least one charge signal from said at least one detector material;

wherein at least one circuit directly coupled to said at least one input receives and accumulates said at least one charge signal; and

wherein at least one time delayed integration circuit is connected to at least one capacitor, wherein said at least one time delayed integration circuit sums said accumulated at least one charge signal with at least one other accumulated charge signal from said at least one detector material inside said at least one integrated circuit and produces at least one readout signal.

38. The imaging detector of claim 37, wherein said at least one detector material is selected from the group consisting of Silicon, Selenium, CdTe, CdZnTe, GaAs, PbI₂, and HgI₂.

39. A method of imaging using a plurality of particles and at least one position sensitive detector, said method comprising:

bump bonding said at least one position sensitive detector on top of at least one integrated circuit with plurality of inputs;

detecting a portion of said plurality of particles by said at least one position sensitive detector and producing a plurality of charge signals;

accumulating said plurality of charge signals on at least one capacitor directly coupled to said plurality of inputs;

connecting a time delayed integration system to said at least one capacitor; and

combining at least two of said accumulated plurality of charge signals with one another to produce at least one readout signal.

40. The imaging method of claim 39, wherein said at least one position sensitive detector material is selected from the group consisting of Silicon, Selenium, CdTe, CdZnTe, GaAs, PbI₂, and HgI₂.

41. The imaging method of claim 39, wherein said at least one position sensitive detector is selected from the group consisting of a pixel detector, a strip detector, a double sided pixel detector, a double sided strip detector, a position sensitive photodiode, a position sensitive avalanche photodiode, an array of photodiodes, and an array of APDs.

42. The method of claim 39, wherein said plurality of particles are selected from the group consisting of photons, electrons, x-rays and gamma rays.

43. A method of imaging using a plurality of particles and at least one detector material comprising:

depositing said at least one detector material on top of at least one integrated circuit with plurality of inputs;

detecting a portion of said plurality of particles by said at least one detector material and producing a plurality of charge signals;

accumulating said plurality of charge signals by on at least one capacitor directly coupled to said plurality of inputs;

connecting a time delayed integration system to said at least one capacitor; and

combining at least one of said accumulated plurality of charge signals with at least one other of said accumulated plurality of charge signals to produce at least one readout signal.

44. The imaging method of claim 43, wherein said at least one detector material is selected from the group consisting of Silicon, Selenium, CdTe, CdZnTe, GaAs, PbI₂, and HgI₂.

45. The method of claim 43, wherein said plurality of particles are selected from the group consisting of photons, electrons, x-rays and gamma rays.

46. A method of imaging using a plurality of particles and at least one position sensitive detector, comprising:

mounting said at least one position sensitive detector on top of at least one integrated circuit with a plurality of inputs;

detecting a portion of said plurality of particles by at least one position sensitive detector that produces a plurality of charge signals;

accumulating said plurality of charge signals directly on at least one capacitor directly coupled to said plurality of inputs;

connecting a time delayed integration system to said at least one capacitor; and

combining at least one of said accumulated plurality of charge signals with at least one other of said accumulated plurality of charge signals to produce at least one readout signal.

47. The method of claim 46, wherein said plurality of particles are selected from the group consisting of photons, electrons, x-rays and gamma rays.

48. The imaging method of claim 46, wherein said at least one position sensitive detector is selected from the group consisting of a pixel detector, a strip detector, a double sided pixel detector, a double sided strip detector, a position sensitive photodiode, a position sensitive avalanche photodiode, an array of photodiodes, and an array of APDs.

49. A method of imaging using a plurality of particles and at least one position sensitive detector, comprising:

mounting said at least one position sensitive detector on top of at least one integrated circuit with a plurality of inputs;

detecting a portion of said plurality of particles by at least one position sensitive detector that produces a plurality of charge signals;

accumulating said plurality of charge signals directly on at least one capacitor directly connected to at least one of said plurality of inputs;

transferring said accumulated plurality of charge signals with a charge transfer method that combines at least two of said accumulated plurality of charge signals with one another; and

producing at least one readout signal from the combined signal.

50. The method of claim 49, wherein said plurality of particles are selected from the group consisting of photons, electrons, x-rays and gamma rays.

51. The imaging method of claim 49, wherein said at least one position sensitive detector is selected from the group consisting of a pixel detector, a strip detector, a double sided pixel detector, a double sided strip detector, a position sensitive photodiode, a position sensitive avalanche photodiode, an array of photodiodes, and an array of APDs.

52. A method of imaging using a plurality of particles and a plurality of position sensitive detectors, wherein said plurality of position sensitive detectors are made by depositing at least one detector material on top of at least one integrated circuit with plurality of inputs, wherein said method comprising:

placing said plurality of position sensitive detectors adjacent to each other;

positioning at least one source of said particles at a distance to said plurality of position sensitive detectors;

placing at least one object to be imaged in between said at least one source and said plurality of position sensitive detectors;

producing a plurality of charge signals from a portion of said plurality of particles inside said at least one detector material;

accumulating said plurality of charge signals directly on at least one capacitor directly coupled to said plurality of inputs;

connecting a time delayed integration system to said at least one capacitor; and

combining at least two of said accumulated plurality of charge signals with one another to produce at least one readout signal.

53. The method of claim 52, wherein said plurality of particles are selected from the group consisting of photons, electrons, x-rays and gamma rays.

54. The method of claim 52, wherein said at least one detector material is selected from the group consisting of Silicon, Selenium, CdTe, CdZnTe, GaAs, PbI₂, and HgI₂.

55. The method of claim 52, wherein said plurality of position sensitive detectors form a linear array.

56. The method of claim 52, wherein said plurality of position sensitive detectors form a two-dimensional array.

57. The imaging method of claim 52, wherein said at least one position sensitive detector made is formed into a position sensitive detector selected from the group consisting of a pixel detector, a strip detector, a double sided pixel detector, a double sided strip detector, a position sensitive photodiode, a position sensitive avalanche photodiode, an array of photodiodes, and an array of APDs.