Low-cost non-volatile flash-RAM memory
First Claim
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1. A flash-RAM memory comprising:
- a non-volatile random access memory (RAM) including an array of magnetic memory cells and organized into at least two stacks of magnetic memory cells, each stack separated from another stack by a dielectric layer, the non-volatile RAM formed on a monolithic die, each of the magnetic memory cells of the non-volatile RAM including a magnetic tunnel junction (MTJ) made of a pinning layer on top of which is formed a fixed layer, on top of which is formed a tunnel layer, on top of which is formed a free layer;
a non-volatile page-mode memory formed on top of the non-volatile RAM, the non-volatile page-mode memory being made of non-magnetic memory, the non-volatile page-mode memory and the non-volatile RAM residing on the same monolithic die, the non-volatile page-mode memory being operative to store data for reading; and
a plurality of transistors, isolated in a silicon area of the monolithic die, that is shared by the non-volatile RAM and the non-volatile page-mode memory, a single transistor of the plurality of transistors used to access a magnetic memory cell of the flash-RAM and a single transistor of the plurality of transistors used to access a page of the non-volatile page-mode memory,wherein data is read, written and erased a page at a time to the non-volatile page-mode memory, with a page comprising a plurality of bits, whereas, the non-volatile pare-mode memory is written to and read from one bit at a time.
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Abstract
A flash-RAM memory includes non-volatile random access memory (RAM) formed on a monolithic die and non-volatile page-mode memory formed on top of the non-volatile RAM, the non-volatile page-mode memory and the non-volatile RAM reside on the monolithic die.
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Citations
19 Claims
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1. A flash-RAM memory comprising:
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a non-volatile random access memory (RAM) including an array of magnetic memory cells and organized into at least two stacks of magnetic memory cells, each stack separated from another stack by a dielectric layer, the non-volatile RAM formed on a monolithic die, each of the magnetic memory cells of the non-volatile RAM including a magnetic tunnel junction (MTJ) made of a pinning layer on top of which is formed a fixed layer, on top of which is formed a tunnel layer, on top of which is formed a free layer; a non-volatile page-mode memory formed on top of the non-volatile RAM, the non-volatile page-mode memory being made of non-magnetic memory, the non-volatile page-mode memory and the non-volatile RAM residing on the same monolithic die, the non-volatile page-mode memory being operative to store data for reading; and a plurality of transistors, isolated in a silicon area of the monolithic die, that is shared by the non-volatile RAM and the non-volatile page-mode memory, a single transistor of the plurality of transistors used to access a magnetic memory cell of the flash-RAM and a single transistor of the plurality of transistors used to access a page of the non-volatile page-mode memory, wherein data is read, written and erased a page at a time to the non-volatile page-mode memory, with a page comprising a plurality of bits, whereas, the non-volatile pare-mode memory is written to and read from one bit at a time. - View Dependent Claims (2, 3, 4, 13, 14, 15, 16, 17)
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5. A computer system comprising:
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a host; and flash-RAM coupled to the host configured to store data, the flash-RAM including, non-volatile random access memory (RAM) formed on a monolithic die that includes a silicon area, the non-volatile RAM including an array of magnetic memory cells and organized into at least two stacks of magnetic memory cells, each stack separated from another stack by a dielectric layer, the non-volatile RAM including a magnetic tunnel junction (MTJ) made of a pinning layer on top of which is formed a fixed layer, on top of which is formed a tunnel layer, on top of which is formed a free layer; and non-volatile page-mode memory formed on top of the non-volatile RAM, the non-volatile page-mode memory being made of non-magnetic memory, the non-volatile page-mode memory and the non-volatile RAM residing on the monolithic die, each of the non-volatile RAM and the non-volatile page-mode memory including magnetic memory cells made of a MTJ, the magnetic memory formed on the monolithic die, the non-volatile page-mode memory being operative to store data for reading thereof, wherein data is read, written and erased a page at a time, with a page comprising a plurality of bits, the non-volatile page-mode memory being addressed a page at a time whereas the flash-RAM being addressed a bit at a time, a page including more than one bit; and a plurality of transistors coupled to the flash-RAM and the non-volatile page-mode memory and formed on an isolated part of the silicon area of the monolithic die thereby avoiding physical contact with the monolithic die, a single transistor of the plurality of transistors used to access a magnetic memory cell of the flash-RAM and a single transistor of the plurality of transistors used to access a page of the non-volatile page-mode memory. - View Dependent Claims (6, 7, 8, 9, 10, 11, 12, 18, 19)
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Specification