Protective film structure of metal member, metal component employing protective film structure, and equipment for producing semiconductor or flat-plate display employing protective film structure

• US 8,124,240 B2
• Filed: 06/16/2006
• Issued: 02/28/2012
• Est. Priority Date: 06/17/2005
• Status: Expired due to Fees

• Current Assignee: NGK Spark PLUG Company Limited, Tohoku University National Universities Corporation
• Original Assignee: Mitsubishi Chemical Corporation (Mitsubishi Chemical Group Corp.), Nihon Ceratec Co., Ltd. (NGK Spark PLUG Company Limited), Tohoku University National Universities Corporation
• Inventors: Ohmi, Tadahiro, Shirai, Yasuyuki, Morinaga, Hitoshi, Kawase, Yasuhiro, Kitano, Masafumi, Mizutani, Fumikazu, Ishikawa, Makoto, Kishi, Yukio
• Primary Examiner(s): SPEER, TIMOTHY M
• Application Number:
  US11/917,633
• Publication Number:
  US 20090142588A1
• Time in Patent Office: 2,083 Days
• Field of Search: 428/688, 428/701, 428/702
• US Class Current: 428/469
• CPC Class Codes: C23C 28/00 Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
• CPC Class Codes: C23C 28/042 including a refractory ceramic layer, e.g. refractory metal oxides, ZrO2, rare earth oxides
• CPC Class Codes: C23C 4/02 Pretreatment of the material to be coated, e.g. for coating on selected surface areas
• CPC Class Codes: C23C 8/80 After-treatment
• CPC Class Codes: C25D 11/02 Anodisation
• CPC Class Codes: C25D 11/04 of aluminium or alloys based thereon
• CPC Class Codes: C25D 11/08 containing inorganic acids
• CPC Class Codes: C25D 11/10 containing organic acids
• CPC Class Codes: C25D 11/16 Pretreatment , e.g. desmutting
• CPC Class Codes: C25D 11/18 After-treatment, e.g. pore-sealing
• CPC Class Codes: Y10T 428/26 Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
• CPC Class Codes: Y10T 428/265 1 mil or less
• CPC Class Codes: Y10T 428/31678 Of metal

Abstract

A protective film structure of a metal member for use in an apparatus for manufacturing a semiconductor or the like, the protective film structure including a first coating layer of faultless aluminum oxide formed by direct anodic oxidation of a base-material metal of an aluminum alloy; and a second coating layer formed on the first coating layer and made of yttrium oxide by a plasma spraying method.

Claims

1. A protective film structure of a metal member for use in an apparatus for manufacturing a semiconductor or the like, said protective film structure comprising:

a first coating layer of faultless aluminum oxide formed by direct anodic oxidation of a base-material metal of an aluminum alloy; and

a second coating layer formed on the first coating layer and made of yttrium oxide by a plasma spraying method.

2. A protective film structure of a metal member according to claim 1, wherein a surface of said base-material metal is blasted before forming said first coating layer.

3. A protective film structure of a metal member according to claim 1, wherein said first coating layer is formed by anodic oxidation using an electrolyte solution in the form of an organic anodization solution of pH 4 to pH 10.

4. A protective film structure of a metal member according to claim 1, wherein said first coating layer is formed by anodic oxidation using an electrolyte solution in the form of an inorganic anodization solution of pH 4 to pH 10.

5. A protective film structure of a metal member according to any one of claims 1, 2, 3, or 4, wherein said first coating layer has a thickness of 10 nm or more and 1 micrometer or less.

6. A protective film structure of a metal member according to claim 1, wherein said second coating layer of yttrium oxide is about 200 micrometers.

7. A gas supply shower head for a semiconductor or flat panel display manufacturing apparatus, using the protective film structure of the metal member according to claim 1.

8. A metal component for a semiconductor or flat panel display manufacturing apparatus, using the protective film structure of the metal member according to claim 1.

9. A semiconductor or flat panel display manufacturing apparatus using the protective film structure of the metal member according to claim 1.

10. A semiconductor or flat panel display manufacturing apparatus using the protective film structure of the metal member according to claim 1 for an inner wall of a process chamber.