Electronic appliance including transistor having LDD region

• US 8,124,973 B2
• Filed: 09/01/2006
• Issued: 02/28/2012
• Est. Priority Date: 03/06/2000
• Status: Expired due to Term

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Koyama, Jun, Suzawa, Hideomi, Ono, Koji, Arao, Tatsuya
• Primary Examiner(s): Tran, Thien F
• Application Number:
  US11/469,768
• Publication Number:
  US 20070246777A1
• Time in Patent Office: 2,006 Days
• Field of Search: 257/59, 257/66, 257/72, 257/347
• US Class Current: 257/59
• CPC Class Codes: G02F 1/13454 Drivers integrated on the active matrix substrate G02F1/136277 takes precedence
• CPC Class Codes: H01L 2029/7863 with an LDD consisting of more than one lightly doped zone or having a non-homogeneous dopant distribution, e.g. graded LDD
• CPC Class Codes: H01L 27/1222 with a particular composition, shape or crystalline structure of the active layer
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/127 with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
• CPC Class Codes: H01L 29/42384 for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile

Abstract

A high reliability semiconductor display device is provided. A semiconductor layer in the semiconductor display device has a channel forming region, an LDD region, a source region, and a drain region, and the LDD region overlaps a first gate electrode, sandwiching a gate insulating film.

Claims

1. A semiconductor device comprising:

a semiconductor film over an insulating surface;

a gate insulating film over the semiconductor film;

a first conductive layer and a first capacitor wiring over the gate insulating film;

a second conductive layer over the first conductive layer;

a second capacitor wiring over the first capacitor wiring;

a first insulating layer over the second conductive layer and the second capacitor wiring;

a second insulating layer over the first insulating layer, the second insulating layer having a first contact hole over the second capacitor wiring;

a first wiring in the first contact hole and over a part of the second insulating layer;

a third insulating layer over the first wiring and the second insulating layer; and

a second wiring over the third insulating layer, in a second hole formed in the third insulating layer and in a third contact hole formed in the first, second and third insulating layers,

wherein the semiconductor film includes;

a channel forming region,

LDD regions in contact with the channel forming region, and

a source region and a drain region in contact with the LDD regions,

wherein an end portion of the first conductive layer extends beyond an end portion of the second conductive layer,

wherein the LDD regions overlap the first conductive layer with the gate insulating film interposed therebetween,

wherein the second conductive layer has a tapered shape in an end portion of the second conductive layer in cross section,

wherein the first conductive layer comprises at least a first element selected from the group consisting of Ta, W, Ti, Mo, Al, and Cu and the second conductive layer comprises at least a second element selected from the group consisting of Ta, W, Ti, Mo, Al, and Cu,

wherein the first element is different from the second element,

wherein an element in the first capacitor wiring is a same as the first element and an element in the second capacitor wiring is a same as the second element, and

wherein the semiconductor film and the second capacitor wiring are electrically connected to each other via the first wiring and the second wiring.

2. A semiconductor device according to claim 1, wherein the channel forming region overlaps the second conductive layer with the gate insulating film interposed therebetween.

3. A semiconductor device according to claim 1 further comprising an EL element,

wherein the EL element comprises:

an anode;

a cathode; and

an EL layer formed between the anode and the cathode,

wherein the drain region is electrically connected to one of the anode and the cathode.

4. A semiconductor device according to claim 3, wherein the source region is electrically connected to the first wiring.

5. A semiconductor device according to claim 1, wherein the first conductive layer has a tapered shape in an end portion thereof in cross section.

6. A semiconductor device according to claim 1,

wherein the LDD regions includes a portion having a concentration gradient of impurity in a range of 1×

1017 to 1×

1018 atoms/cm3, and

wherein the concentration of the impurity increases as a distance from the channel forming region increases.

7. A semiconductor device according to claim 1,

wherein the first conductive layer and the second conductive layer are in contact with the first insulating layer.

8. A semiconductor device according to claim 1, wherein the semiconductor device is one selected from the group consisting of an EL display device, a video camera, a digital camera, a head mount display, a sound reproduction device, an image reproduction device, a personal computer and a portable telephone.

9. A semiconductor device comprising:

a semiconductor film over an insulating surface;

a gate insulating film over the semiconductor film;

a first conductive layer and a first capacitor wiring over the gate insulating film;

a second conductive layer over the first conductive layer;

a second capacitor wiring over the first capacitor wiring;

a first insulating layer over the second conductive layer and the second capacitor wiring;

a second insulating layer over the first insulating layer, the second insulating layer having a first contact hole over the second capacitor wiring;

a first wiring in the first contact hole and over a part of the second insulating layer;

a third insulating layer over the first wiring and the second insulating layer; and

a second wiring over the third insulating layer, in a second contact hole formed in the third insulating layer and a third contact hole formed in the first, second and third insulating layers,

wherein the semiconductor film includes;

a channel forming region,

LDD regions in contact with the channel forming region, and

a source region and a drain region in contact with the LDD regions,

wherein an end portion of the first conductive layer extends beyond an end portion of the second conductive layer,

wherein the second conductive layer has a tapered shape in an end portion of the second conductive layer in cross section,

wherein the LDD regions overlap the first conductive layer with the gate insulating film interposed therebetween,

wherein the first conductive layer comprises tantalum, and the second conductive layer comprises tungsten, and

wherein the semiconductor film and the second capacitor wiring are electrically connected to each other via the first wiring and the second wiring.

10. A semiconductor device according to claim 9, wherein the channel forming region overlaps the second conductive layer with the gate insulating film interposed therebetween.

11. A semiconductor device according to claim 9, further comprising an EL element,

wherein the EL element comprises:

an anode;

a cathode; and

an EL layer being formed between the anode and the cathode,

wherein the drain region is electrically connected to one of the anode and the cathode.

12. A semiconductor device according to claim 11, wherein the source region is electrically connected to the first wiring.

13. A semiconductor device according to claim 9, wherein the first conductive layer has a tapered shape in an end portion thereof in cross section.

14. A semiconductor device according to claim 9,

wherein the first conductive layer and the second conductive layer are in contact with the first insulating layer.

15. A semiconductor device according to claim 9, wherein the semiconductor device is one selected from the group consisting of an EL display device, a video camera, a digital camera, a head mount display, a sound reproduction device, an image reproduction device, a personal computer and a portable telephone.

16. A semiconductor device according to claim 9, wherein the first conductive layer is tantalum nitride.

17. A semiconductor device comprising:

a semiconductor film over an insulating surface;

a gate insulating film over the semiconductor film;

a first conductive layer and a first capacitor wiring over the gate insulating film; and

a second conductive layer over the first conductive layer,

a second capacitor wiring over the first capacitor wiring;

a first insulating layer over the second conductive layer and the second capacitor wiring;

a second insulating layer over the first insulating layer, the second insulating layer having a first contact hole over the second capacitor wiring;

a first wiring in the first contact hole and over a part of the second insulating layer;

a third insulating layer over the first wiring and the second insulating layer; and

a second wiring over the third insulating layer, in a second hole formed in the third insulating layer and in a third contact hole formed in the first, second and third insulating layers,

wherein the semiconductor film includes;

a channel forming region,

LDD regions in contact with the channel forming region, and

a source region and a drain region in contact with the LDD regions,

wherein an end portion of the first conductive layer extends beyond an end portion of the second conductive layer,

wherein the second conductive layer has a tapered shape in an end portion of the second conductive layer in cross section,

wherein the LDD regions overlap the first conductive layer with the gate insulating film interposed therebetween, and

wherein the first conductive layer comprises titanium, and the second conductive layer comprises aluminum.

18. A semiconductor device according to claim 17, wherein the channel forming region overlaps the second conductive layer with the gate insulating film interposed therebetween.

19. A semiconductor device according to claim 17, wherein the first conductive layer has a tapered shape in an end portion thereof in cross section.

20. A semiconductor device according to claim 17, wherein the semiconductor device is one selected from the group consisting of an EL display device, a video camera, a digital camera, a head mount display, a sound reproduction device, an image reproduction device, a personal computer and a portable telephone.

21. A semiconductor device comprising:

a semiconductor film over an insulating surface;

a gate insulating film over the semiconductor film; and

a gate electrode comprising;

a first conductive layer over the gate insulating film; and

a second conductive layer over the first conductive layer,

wherein the semiconductor film includes;

a channel forming region,

LDD regions in contact with the channel forming region, and

a source region and a drain region in contact with the LDD regions,

wherein an end portion of the first conductive layer extends beyond an end portion of the second conductive layer,

wherein the second conductive layer has a tapered shape in an end portion of the second conductive layer in cross section,

wherein the LDD regions overlap the first conductive layer with the gate insulating film interposed therebetween,

wherein the first conductive layer comprises titanium, and the second conductive layer comprises aluminum,

wherein the semiconductor film is electrically connected to an EL element,

wherein the EL element comprises;

an anode;

a cathode; and

an EL layer being formed between the anode and the cathode, and

wherein the drain region is electrically connected to one of the anode and the cathode.

22. A semiconductor device comprising:

a semiconductor film over an insulating surface;

a gate insulating film over the semiconductor film; and

a gate electrode comprising;

a first conductive layer over the gate insulating film; and

a second conductive layer over the first conductive layer,

wherein the semiconductor film includes;

a channel forming region,

LDD regions in contact with the channel forming region, and

a source region and a drain region in contact with the LDD regions,

wherein an end portion of the first conductive layer extends beyond an end portion of the second conductive layer,

wherein the second conductive layer has a tapered shape in an end portion of the second conductive layer in cross section,

wherein the LDD regions overlap the first conductive layer with the gate insulating film interposed therebetween, and

wherein the first conductive layer comprises titanium, and the second conductive layer comprises aluminum,

wherein an insulating layer is formed over the second conductive layer, and

wherein the first conductive layer and the second conductive layer are in contact with the insulating layer.

23. A semiconductor device comprising:

a semiconductor film over an insulating surface;

a gate insulating film over the semiconductor film;

a gate electrode and a capacitor wiring over the gate insulating film;

a first insulating layer over the gate electrode and the capacitor wiring;

a second insulating layer over the first insulating layer, the second insulating layer having a first contact hole over the capacitor wiring;

a first wiring in the first contact hole and over a part of the second insulating layer;

a third insulating layer over the first wiring and the second insulating layer; and

a second wiring over the third insulating layer, in a second hole formed in the third insulating layer and a third contact hole formed in the first, second and third insulating layers,

wherein the semiconductor film includes;

a channel forming region, and

a source region and a drain region, and

wherein the semiconductor film and the capacitor wiring are electrically connected to each other via the first wiring and the second wiring.

24. A semiconductor device according to claim 23, wherein the channel forming region overlaps the gate electrode with the gate insulating film interposed therebetween.

25. A semiconductor device according to claim 23 further comprising an EL element,

wherein the EL element comprises:

an anode;

a cathode; and

an EL layer formed between the anode and the cathode, and

wherein the drain region is electrically connected to one of the anode and the cathode.

26. A semiconductor device according to claim 25, wherein the source region is electrically connected to the first wiring.

27. A semiconductor device according to claim 23, wherein the first conductive layer has a tapered shape in an end portion thereof in cross section.

28. A semiconductor device according to claim 23, wherein the first conductive layer and the second conductive layer are in contact with the first insulating layer.