Nitride semiconductor light emitting device and method of manufacturing the same

• US 8,124,997 B2
• Filed: 04/08/2010
• Issued: 02/28/2012
• Est. Priority Date: 11/03/2006
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung LED Co., Ltd. (Samsung Electronics Co. Ltd.)
• Inventors: Kim, Tae Jun, Lee, Su Yeol, Kim, Dong Woo, Park, Hyun Ju, Shin, Hyoun Soo, Pyeon, In Joon
• Primary Examiner(s): Wilson, Allan R
• Application Number:
  US12/756,528
• Publication Number:
  US 20100193823A1
• Time in Patent Office: 691 Days
• Field of Search: 257/98, 257/E33.074, 257/E33.025, 257/E33.068, 438/29
• US Class Current: 257/98
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

There are provided a method of manufacturing a nitride semiconductor light emitting device and the nitride semiconductor light emitting device manufactured by the method, the method including: forming a light emitting structure by sequentially growing a first conductivity nitride layer, an active layer and a second conductivity type nitride layer on a preliminary substrate for nitride single crystal growth; separating the light emitting structure in accordance with a size of final light emitting device; forming a conductive substrate on the light emitting structure; polishing a bottom surface of the preliminary substrate to reduce a thickness of the preliminary substrate; forming uneven surface structures by machining the preliminary substrate; selectively removing the preliminary substrate to expose portions of the first conductivity type nitride layer; and forming electrodes on the portions of the first conductivity type nitride layer exposed by selectively removing the preliminary substrate.

Claims

1. A nitride semiconductor light emitting device comprising:

a conductive substrate;

a light emitting structure comprising a second conductivity nitride layer, an active layer and a first conductivity type nitride layer sequentially formed on the conductive substrate;

an electrode formed on one portion of the first conductivity type nitride layer; and

a light scattering layer formed on the other portion of the first conductivity type nitride layer, the light scattering layer formed of a material selected from a group consisting of sapphire, SiC, MgAl₂O₄, MgO, LiAlO₂ and LiGaO₂ and having an upper surface in which uneven surface structures are formed,

wherein ions having a larger radius than that of a particle of the material forming the light scattering layer are injected into the light scattering layer in order to destroy the crystallinity thereof.

2. The device of claim 1, wherein the light scattering layer has a thickness of 50 to 200 μ

m.

3. The device of claim 1, wherein the conductive substrate is formed of a material selected form a group consisting of Si, Ge, SiC, ZnO and GaAs.

4. The device of claim 1, wherein the electrode is formed of a material selected form a group consisting of Cr, Au, Ti, Al, Rh, Pt, Ni, W, Ir, V, ITO, CIO, IZO and combination thereof.