Semiconductor structure having a unidirectional and a bidirectional device and method of manufacture
First Claim
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1. A method of manufacturing a semiconductor device, the method comprising:
- forming at least one recess in a semiconductor layer;
forming a unidirectional device in and over a first region of the semiconductor layer comprising the at least one recess, wherein the unidirectional device is disposed entirely within the recess to allow planarization of at least a portion of the first region, the unidirectional device comprising a higher voltage, asymmetric transistor having a source and a drain; and
forming a bidirectional device in and over a second region of the semiconductor layer, the bidirectional device comprising a lower voltage transistor.
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Abstract
In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a method includes forming a portion of the unidirectional transistor and a portion of a bidirectional transistor in or over a semiconductor material simultaneously. Other embodiments are described and claimed.
26 Citations
8 Claims
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1. A method of manufacturing a semiconductor device, the method comprising:
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forming at least one recess in a semiconductor layer; forming a unidirectional device in and over a first region of the semiconductor layer comprising the at least one recess, wherein the unidirectional device is disposed entirely within the recess to allow planarization of at least a portion of the first region, the unidirectional device comprising a higher voltage, asymmetric transistor having a source and a drain; and forming a bidirectional device in and over a second region of the semiconductor layer, the bidirectional device comprising a lower voltage transistor. - View Dependent Claims (2, 3, 4)
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5. A semiconductor device, comprising:
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a semiconductor layer having at least one recess formed therein; a unidirectional device disposed in and over a first region of the semiconductor layer comprising the at least one recess, wherein the unidirectional device is disposed entirely within the recess to allow planarization of at least a portion of the first region, the unidirectional device comprising a higher voltage, asymmetric transistor having a source and a drain; and a bidirectional device disposed in and over a second region of the semiconductor layer, the bidirectional device comprising a lower voltage transistor. - View Dependent Claims (6, 7, 8)
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Specification