Micro-electromechanical system devices

• US 8,125,046 B2
• Filed: 06/04/2008
• Issued: 02/28/2012
• Est. Priority Date: 06/04/2008
• Status: Expired due to Fees

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Mueller, Karl-Heinz, Winkler, Bernhard, Gruenberger, Robert
• Primary Examiner(s): Yang, Minchul
• Application Number:
  US12/133,104
• Publication Number:
  US 20090302415A1
• Time in Patent Office: 1,364 Days
• Field of Search: 257/508, 257/501, 257/522, 257E23013-E23014
• US Class Current: 257/522
• CPC Class Codes: B81B 2201/0271 Resonators; ultrasonic resonators
• CPC Class Codes: B81C 1/00246 Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
• CPC Class Codes: B81C 2203/0742 Interleave, i.e. simultaneously forming the micromechanical structure and the CMOS circuit

Abstract

Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a semiconductive layer disposed over a substrate. A trench is disposed in the semiconductive layer, the trench with a first sidewall and an opposite second sidewall. A first insulating material layer is disposed over an upper portion of the first sidewall, and a conductive material disposed within the trench. An air gap is disposed between the conductive material and the semiconductive layer.

Claims

1. A micro-electromechanical system (MEMS) device, comprising:

a semiconductive layer disposed over a substrate;

a trench disposed in the semiconductive layer, the trench comprising a first sidewall and an opposite second sidewall;

a first insulating material layer disposed over an upper portion of the first sidewall;

a conductive material disposed within the trench;

a first air gap disposed between the conductive material and the semiconductive layer; and

a second air gap disposed over the substrate, the second air gap disposed between the substrate and a bottom surface of the semiconductive layer; and

a second insulating layer disposed between the substrate and the bottom surface of the semiconductive layer.

2. The MEMS device of claim 1, wherein the semiconductive layer comprises a resonator layer, wherein the resonator layer comprises upper, middle and lower layers, the upper layer disposed on the middle layer, the middle layer disposed on the lower layer, wherein the upper and lower layers comprise a lower conductivity than the middle layer.

3. The MEMS device of claim 1, wherein the first air gap is disposed on the second sidewall and a lower portion of the first sidewall.

4. The MEMS device of claim 1, the first and second air gaps are connected.

5. The MEMS device of claim 4, wherein a third air gap extends over a top surface of the semiconductive layer, the top surface being opposite to the bottom surface, the third air gap being connected to the first air gap.

6. The MEMS device of claim 5, wherein the third air gap is encapsulated by a second insulating layer.

7. The MEMS device of claim 1, wherein the first air gap is further disposed between the conductive material and the substrate.

8. The MEMS device of claim 1, wherein the semiconductive layer comprises a first layer, the first layer being capacitively coupled to the conductive material through the first air gap.

9. The MEMS device of claim 8, wherein the semiconductive layer comprises second and third layers, the second layer disposed above the first layer and the third layer disposed below the first layer, the second and third layers comprising a higher resistance than the first layer.

10. The MEMS device of claim 1, wherein the semiconductive layer comprises an oscillating element, and wherein the oscillating element comprises a resonator, an actuator, a sensor, a switch, or an accelerometer.

11. The MEMS device of claim 1, wherein the first air gap comprises a thickness of about 500 nm or less to about 5 nm.

12. The MEMS device of claim 1, wherein the trench comprises a depth from about 500 nm to about 10000 nm, and wherein the trench comprises a ratio of depth to width that is less than about 10:

1, and wherein the semiconductive layer comprises a thickness of about 250 nm to about 10000 nm.

13. The MEMS device of claim 1, further comprising:

an additional trench disposed in the semiconductive layer, the conductive material disposed within the additional trench, the additional trench comprising a third sidewall and an opposite fourth sidewall;

a fourth insulating material layer disposed over an upper portion of the third sidewall; and

a fifth air gap disposed between the fourth sidewall and the semiconductive layer.

14. The MEMS device of claim 1, wherein a first sidewall of the second air gap comprises the bottom surface of the semiconductive layer, a second sidewall of the second air gap comprises a sidewall of the second insulating layer, and a third sidewall of the second air gap comprises a surface of the substrate.

15. The MEMS device of claim 14, wherein the first sidewall is about orthogonal to the second sidewall.

16. A micro-electromechanical system (MEMS) device, comprising:

a semiconductive layer disposed over a substrate;

a first trench disposed in the semiconductive layer, the trench comprising a first sidewall and an opposite second sidewall;

a first insulating material layer disposed over an upper portion of the first sidewall of the semiconductive layer;

a conductive material disposed within the trench, the conductive material comprising a first sidewall and an opposite second sidewall; and

a first air gap within the trench, a first portion of the first air gap being disposed between the first sidewall of the conductive material and the first sidewall of the semiconductive layer, a second portion of the first air gap being disposed between the second sidewall of the conductive material and the second sidewall of the semiconductive layer.

17. The MEMS device of claim 16, wherein the first portion of the first air gap contacts the second sidewall and the second portion of the first air gap contacts a lower portion of the first sidewall.

18. The MEMS device of claim 16, wherein a length of the first portion of the first air gap along the trench is smaller than a length of the second portion of the first air gap along the trench.

19. The MEMS device of claim 16, further comprising a second air gap disposed over the substrate, the second air gap disposed between the substrate and a bottom surface of the semiconductive layer.

20. The MEMS device of claim 19, wherein the first and second air gaps are connected.

21. The MEMS device of claim 16, wherein the semiconductive layer comprises a resonator layer, wherein the resonator layer comprises upper, middle and lower layers, the upper layer disposed on the middle layer, the middle layer disposed on the lower layer, wherein the upper and lower layers comprise a lower conductivity than the middle layer.

22. The MEMS device of claim 16, wherein a third air gap extends over a top surface of the semiconductive layer, the third air gap being connected to the first air gap.

23. The MEMS device of claim 22, wherein the third air gap is encapsulated by a second insulating layer.

24. The MEMS device of claim 16, wherein the first air gap is further disposed between the conductive material and the substrate.

25. The MEMS device of claim 16, further comprising a second insulating layer disposed between the substrate and a bottom surface of the semiconductive layer.

26. The MEMS device of claim 16, wherein the semiconductive layer comprises a first layer, the first layer being capacitively coupled to the conductive material through the first air gap.

27. The MEMS device of claim 26, wherein the semiconductive layer comprises second and third layers, the second layer disposed above the first layer and the third layer disposed below the first layer, the second and third layers comprising a higher resistance than the first layer.

28. The MEMS device of claim 26, wherein the semiconductive layer comprises an oscillating element, and wherein the oscillating element comprises a resonator, an actuator, a sensor, a switch, or an accelerometer.