Wafer integrated with permanent carrier and method therefor
First Claim
1. A semiconductor device, comprising:
- a wafer for supporting the semiconductor device;
a conductive layer formed over a top surface of the wafer;
a carrier wafer permanently bonded over the conductive layer; and
an interconnect structure formed within the wafer and the carrier wafer, wherein the interconnect structure includes,a first via formed in the wafer that exposes the conductive layer,a second via formed in the carrier wafer that exposes the conductive layer,a first metal layer deposited over the first via, the first metal layer in electrical contact with the conductive layer, anda second metal layer deposited over the second via, the second metal layer in electrical contact with the conductive layer.
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Accused Products
Abstract
A semiconductor device has a wafer for supporting the device and a conductive layer formed over a top surface of the wafer. A carrier wafer is permanently bonded over the conductive layer. Within the wafer and the carrier wafer, an interconnect structure is formed. The interconnect structure includes a first via formed in the wafer that exposes the conductive layer, a second via formed in the carrier wafer that exposes the conductive layer, a first metal layer deposited over the first via, the first metal layer in electrical contact with the conductive layer, and a second metal layer deposited over the second via, the second metal layer in electrical contact with the conductive layer. First and second insulation layers are deposited over the first and second metal layers respectively. The first or second insulation layer has an etched portion to expose a portion of the first or second metal layer.
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Citations
33 Claims
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1. A semiconductor device, comprising:
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a wafer for supporting the semiconductor device; a conductive layer formed over a top surface of the wafer; a carrier wafer permanently bonded over the conductive layer; and an interconnect structure formed within the wafer and the carrier wafer, wherein the interconnect structure includes, a first via formed in the wafer that exposes the conductive layer, a second via formed in the carrier wafer that exposes the conductive layer, a first metal layer deposited over the first via, the first metal layer in electrical contact with the conductive layer, and a second metal layer deposited over the second via, the second metal layer in electrical contact with the conductive layer. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor device, comprising:
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a wafer for supporting the semiconductor device; a conductive layer formed over a top surface of the wafer; a carrier wafer permanently bonded over the conductive layer, the carrier wafer includes a material selected from the group consisting of glass, silicon, silicon carbide, and ceramic; and an interconnect structure formed within the wafer and the carrier wafer, the interconnect structure includes; a first metal layer formed in the wafer and in electrical contact with the conductive layer, and a second metal layer formed in the carrier wafer and in electrical contact with the conductive layer. - View Dependent Claims (8, 9, 10, 11, 12)
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13. A semiconductor device, comprising:
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a first substrate a conductive layer formed over a surface of the first substrate; a second substrate permanently bonded to the conductive layer and first substrate; a first interconnect structure formed over and through the first substrate and electrically connected to the conductive layer; a second interconnect structure formed over and through the second substrate and electrically connected to the conductive layer; and a first insulation layer deposited over and into the first interconnect structure; and a second insulation layer deposited over and into the second interconnect structure. - View Dependent Claims (14, 15, 16, 17, 18, 19)
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20. A method of making a semiconductor device, comprising:
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providing a first substrate; forming a first conductive layer over the first substrate; mounting a second substrate to the first conductive layer and first substrate; forming a first via through the first substrate to expose the first conductive layer; conformally applying a first insulating layer over a surface of the first substrate and into the first via; conformally applying a second conductive layer over the first insulating layer and into the first via and electrically connected to the first conductive layer; forming a second via through the second substrate to expose the first conductive layer; conformally applying a third conductive layer over a surface of the second substrate and into the second via and electrically connected to the first conductive layer; forming a second insulating layer over the second conductive layer and into the first via; and forming a third insulating layer over the third conductive layer and into the second via. - View Dependent Claims (21, 22, 23, 24, 25, 26)
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27. A method of making a semiconductor device, comprising:
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providing a first substrate; forming a first conductive layer over the first substrate; mounting a second substrate to the first conductive layer and first substrate; forming a first via through the first substrate to expose the first conductive layer; forming a second conductive layer over a surface of the first substrate and into the first via and electrically connected to the first conductive layer; forming a second via through the second substrate to expose the first conductive layer; forming a third conductive layer over a surface of the second substrate and into the second via and electrically connected to the first conductive layer; forming a first insulating layer over the second conductive layer and into the first via; and forming a second insulating layer over the third conductive layer and into the second via. - View Dependent Claims (28, 29, 30, 31, 32, 33)
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Specification