Method for fabricating a semiconductor component based on GaN
First Claim
Patent Images
1. A method for an epitaxial fabrication of a thin-film light emitting-diode, the method comprising the steps of:
- forming GaN-based layers on a substrate which comprises sapphire, the GaN-based layers comprising an active layer sequence for emitting radiation;
patterning the GaN-based layers into individual semiconductor layer stacks after they have been deposited on the substrate comprising sapphire;
applying an electrically conductive carrier to the semiconductor layer stacks on a side of the semiconductor layer stacks which faces away from the substrate comprising sapphire and subsequently removing the substrate comprising sapphire such that the substrate comprising sapphire can be reused at least in part;
forming a contact surface on surfaces of the semiconductor layer stacks from which the substrate comprising sapphire has been removed; and
separating the semiconductor layer stacks from each other into a plurality of thin-film light-emitting diodes.
3 Assignments
0 Petitions
Accused Products
Abstract
A semiconductor component has a plurality of GaN-based layers, which are preferably used to generate radiation, produced in a fabrication process. In the process, the plurality of GaN-based layers are applied to a composite substrate that includes a substrate body and an interlayer. A coefficient of thermal expansion of the substrate body is similar to or preferably greater than the coefficient of thermal expansion of the GaN-based layers, and the GaN-based layers are deposited on the interlayer. The interlayer and the substrate body are preferably joined by a wafer bonding process.
102 Citations
7 Claims
-
1. A method for an epitaxial fabrication of a thin-film light emitting-diode, the method comprising the steps of:
-
forming GaN-based layers on a substrate which comprises sapphire, the GaN-based layers comprising an active layer sequence for emitting radiation; patterning the GaN-based layers into individual semiconductor layer stacks after they have been deposited on the substrate comprising sapphire; applying an electrically conductive carrier to the semiconductor layer stacks on a side of the semiconductor layer stacks which faces away from the substrate comprising sapphire and subsequently removing the substrate comprising sapphire such that the substrate comprising sapphire can be reused at least in part; forming a contact surface on surfaces of the semiconductor layer stacks from which the substrate comprising sapphire has been removed; and separating the semiconductor layer stacks from each other into a plurality of thin-film light-emitting diodes. - View Dependent Claims (2, 3, 4, 5, 6, 7)
-
Specification
-
- Resources
Litigation Campaign Assessment
Thank you for your request. You will receive a custom alert email when the Litigation Campaign Assessment is available.
×
-
Current AssigneeOSRAM OLED GMBH (Ams-Osram AG)
-
Original AssigneeOSRAM Licht AG (Ams-Osram AG)
-
InventorsBader, Stefan, Eisert, Dominik, Hahn, Berthold, Härle, Volker
-
Primary Examiner(s)MULPURI, SAVITRI
-
Application NumberUS12/648,566Publication NumberTime in Patent Office798 DaysField of Search438459-464, 438 22- 47US Class Current438/46CPC Class CodesH01L 27/153 in a repetitive configurati...H01L 33/0093 Wafer bonding; Removal of t...H01L 33/405 Reflective materialsH01L 33/44 characterised by the coatin...
