Vertical light-emitting diode device structure with Si x N y layer
First Claim
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1. A method of increasing light extraction from a vertical light-emitting diode (VLED) device, comprising:
- depositing a first n-doped layer above a carrier substrate;
depositing a SixNy mask above the first n-doped layer, wherein the SixNy mask has openings exposing portions of the first n-doped layer;
depositing a second n-doped layer above the SixNy mask such that the second n-doped layer is also deposited in the openings;
depositing an active layer for emitting light above the second n-doped layer;
depositing a p-doped layer above the active layer;
depositing one or more metal layers above the p-doped layer;
removing the carrier substrate;
removing the first n-doped layer and the SixNy mask to expose a surface of the second n-doped layer; and
roughening the exposed surface of the second n-doped layer to increase light extraction from the roughened surface.
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Abstract
A vertical light-emitting diode (VLED) structure fabricated with a SixNy layer responsible for providing increased light extraction out of a roughened n-doped surface of the VLED are provided. Such VLED structures fabricated with a SixNy layer may have increased luminous efficiency when compared to conventional VLED structures fabricated without a SixNy layer. Methods for creating such VLED structures are also provided.
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10 Claims
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1. A method of increasing light extraction from a vertical light-emitting diode (VLED) device, comprising:
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depositing a first n-doped layer above a carrier substrate; depositing a SixNy mask above the first n-doped layer, wherein the SixNy mask has openings exposing portions of the first n-doped layer; depositing a second n-doped layer above the SixNy mask such that the second n-doped layer is also deposited in the openings; depositing an active layer for emitting light above the second n-doped layer; depositing a p-doped layer above the active layer; depositing one or more metal layers above the p-doped layer; removing the carrier substrate; removing the first n-doped layer and the SixNy mask to expose a surface of the second n-doped layer; and roughening the exposed surface of the second n-doped layer to increase light extraction from the roughened surface. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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