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Method of improving mechanical properties of semiconductor interconnects with nanoparticles

  • US 8,129,269 B1
  • Filed: 09/20/2010
  • Issued: 03/06/2012
  • Est. Priority Date: 09/20/2010
  • Status: Expired due to Fees
First Claim
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1. A method of forming a multi-layer structure comprising:

  • forming one or more ultra low-k (ULK) dielectric layers with each alternating ULK dielectric layer having a plurality of metal filled trenches and vias formed therein,forming a cap, capping and sealing said ULK dielectric layers having said plurality of metal filled trenches and vias; and

    spin capping nanoparticles forming a monolayer at an interface between said ULK dielectric layers and each of said caps.

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