Method of improving mechanical properties of semiconductor interconnects with nanoparticles

• US 8,129,269 B1
• Filed: 09/20/2010
• Issued: 03/06/2012
• Est. Priority Date: 09/20/2010
• Status: Expired due to Fees

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Cheng, Tien-Jen J., Bao, Junjing, Lustig, Naftali
• Primary Examiner(s): Ghyka, Alexander
• Assistant Examiner(s): Nikmanesh, Seahvosh
• Application Number:
  US12/885,596
• Publication Number:
  US 20120068315A1
• Time in Patent Office: 533 Days
• Field of Search: 438/637, 438/409, 438/960, 257/E21.273
• US Class Current: 438/637
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02203 the layer being porous
• CPC Class Codes: H01L 21/02348 treatment by exposure to UV light
• CPC Class Codes: H01L 21/3105 After-treatment
• CPC Class Codes: H01L 21/76829 characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
• CPC Class Codes: H01L 21/76832 Multiple layers
• CPC Class Codes: H01L 23/53295 Stacked insulating layers
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: Y10S 438/96 Porous semiconductor

Abstract

In a BEOL process, UV radiation is used in a curing process of ultra low-k (ULK) dielectrics. This radiation penetrates through the ULK material and reaches the cap film underneath it. The interaction between the UV light and the film leads to a change the properties of the cap film. Of particular concern is the change in the stress state of the cap from compressive to tensile stress. This leads to a weaker dielectric-cap interface and mechanical failure of the ULK film. A layer of nanoparticles is inserted between the cap and the ULK film. The nanoparticles absorb the UV light before it can damage the cap film, thus maintaining the mechanical integrity of the ULK dielectric.

Claims

1. A method of forming a multi-layer structure comprising:

forming one or more ultra low-k (ULK) dielectric layers with each alternating ULK dielectric layer having a plurality of metal filled trenches and vias formed therein,

forming a cap, capping and sealing said ULK dielectric layers having said plurality of metal filled trenches and vias; and

spin capping nanoparticles forming a monolayer at an interface between said ULK dielectric layers and each of said caps.

2. The method as recited in claim 1 further comprising:

a. spinning-on a solution on said nanoparticles, followed by drying out said nanoparticles of solvent;

b. depositing a next level ULK with UV cure;

c. etching said ULK and removing said nanoparticles from etched open areas;

d. depositing a refractory liner and a conductive layer followed by electroplated copper filling said open areas, followed by annealing; and

e. polishing said liner and conductive layer; and

f. depositing a dielectric cap thereon.

3. The method as recited in claim 2, wherein said conductive layer is made of Cu or Cu alloy.

4. The method as recited in claim 2, wherein said dielectric cap is made of SiCHN.

5. The method as recited in claim 2, wherein said drying is carried out by heating.

6. The method as recited in claim 2, wherein said drying out of said nanoparticles is preformed using an organic solvent.

7. The method as recited in claim 2, wherein said polishing is followed by cleaning said solvents and other residuals.

8. The method as recited in claim 2, wherein said refractory liner is made of TaN, Ta, W, WNx, TiNx, Ru, or Co.

9. The method as recited in claim 7, wherein cleaning said solvents and residuals is performed using dilute hydrofluoric acid (DHF).

10. The method as recited in claim 1, wherein said trench filling is performed by electrochemical plating.

11. The method as recited in claim 2, wherein said polishing is performed by a chemical mechanical polish (CMP).

12. The method as recited in claim 2 further comprising curing said ultra low-k (ULK) dielectrics.

13. The method as recited in claim 2, wherein radiation penetrates through said ULK dielectric, reaching said cap.

14. A method of forming a multilevel Back-end-of-line (BEOL) stack, each level comprising:

spinning a solution containing nanoparticles followed by drying out said solution;

forming a ULK dielectric layer followed by UV cure;

lithographic patterning lines or vias;

transferring said patterned lines or vias into said ULK dielectric by etching;

removing said nanoparticles at a bottom of open areas created by rinsing with organic solvents;

surface cleaning by applying DHF and rinsing said solvents and said etching residuals;

forming a liner made of TaN, Ta, W, WNx, TiNx, Ru, Co followed by Cu or Cu alloy deposition followed by electrochemical process of said Cu followed by annealing said Cu; and

applying a chemical mechanical polish of said copper and liner overburden; and

depositing a SiCNH cap.