Semiconductor, semiconductor device, complementary transistor circuit device

• US 8,129,714 B2
• Filed: 06/05/2007
• Issued: 03/06/2012
• Est. Priority Date: 02/16/2007
• Status: Expired due to Fees

• Current Assignee: Idemitsu Kosan Company Limited
• Original Assignee: Idemitsu Kosan Company Limited
• Inventors: Yano, Koki, Nakanotani, Hajime, Adachi, Chihaya
• Primary Examiner(s): NGUYEN, CUONG QUANG
• Application Number:
  US11/806,995
• Publication Number:
  US 20080197344A1
• Time in Patent Office: 1,736 Days
• Field of Search: 257/40, 257 59- 72, 257/E29.273
• US Class Current: 257/40
• CPC Class Codes: H10K 10/29 Diodes comprising organic-inorganic heterojunctions
• CPC Class Codes: H10K 10/466 Lateral bottom-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 10/472 the gate dielectric comprising only inorganic materials
• CPC Class Codes: H10K 10/486 the channel region comprising two or more active layers, e.g. forming pn heterojunctions

Abstract

A semiconductor device including a semiconductor 1, a first electrode 2, an insulating layer 3 interposed between the semiconductor 1 and the first electrode 2, the second electrode 4 which is in contact with the semiconductor 1 and is detached from the first electrode 2, and the third electrode 5 which is in contact with the semiconductor 1 and is detached from the first electrode 2 and the second electrode 4, wherein the semiconductor 1 is provided with the organic semiconductor layer 10 and the oxide semiconductor layer 11.

Claims

1. A semiconductor comprising an organic semiconductor layer and an oxide semiconductor layer, wherein at least one of the following conditions a), b), or c) is satisfied:

a) the oxide semiconductor layer is formed of an amorphous oxide containing at least one of In, Zn, Sn, and Ga;

b) the oxide semiconductor layer is formed of a polycrystalline oxide containing In and a positive divalent element;

c) the oxide semiconductor layer has a stacked layer structure in which a plurality of layered oxides are stacked, and a layered oxide closest to the organic semiconductor layer is formed of a material which allows the layered oxide to have a work function larger than the work function of other layered oxides.

2. The semiconductor according to claim 1, wherein the semiconductor is provided with ambipolar (n-type and p-type) characteristics.

3. The semiconductor according to claim 1, wherein the organic semiconductor layer is formed of an organic substance with p-type characteristics, an organic substance with ambipolar characteristics, an organic substance with n-type characteristics, or a stacked body or a mixture body composed of two or more thereof.

4. The semiconductor according to claim 1, wherein the oxide semiconductor layer is formed of a non-degenerated oxide with n-type characteristics.

5. The semiconductor according to claim 4, wherein the oxide semiconductor layer has an electron carrier density of less than 10¹⁸/cm³.

7. The semiconductor according to claim 1, wherein the oxide semiconductor layer has a work function of 4.8 (eV) or more.

8. The semiconductor according to claim 1, wherein the oxide semiconductor layer has a band gap of 2.5 (eV) or more.

9. The semiconductor according to claim 1, wherein the organic semiconductor layer and the oxide semiconductor layer are in contact with each other.

13. A semiconductor device comprising:

a semiconductor;

a first electrode;

an insulating layer interposed between the semiconductor and the first electrode;

a second electrode which is in contact with the semiconductor and is detached from the first electrode; and

a third electrode which is in contact with the semiconductor and is detached from the first electrode and the second electrode;

the semiconductor being formed of the semiconductor according to claim 1.

14. The semiconductor device according to claim 13, wherein the organic semiconductor layer and the oxide semiconductor layer are formed into a thin film.

15. The semiconductor device according to claim 13, wherein a ratio (μ

(n)/μ

(p)) of a field effect mobility (μ

(n)) at the time of n-type driving and a field effect mobility (μ

(p)) at the time of p-type driving is 10<sup>−

5</sup>≦

μ

(n)/μ

(p)≦

10⁵.

16. A complementary transistor circuit device provided with a plurality of semiconductor devices, wherein at least one of the plurality of semiconductor devices is formed of the semiconductor device according to claim 13.

6. A semiconductor comprising an organic semiconductor layer and an oxide semiconductor layer, wherein the oxide semiconductor layer is formed of an amorphous oxide containing at least one of In, Zn, Sn, and Ga.

10. A semiconductor comprising an organic semiconductor layer and an oxide semiconductor layer, wherein the oxide semiconductor layer is formed of an amorphous oxide containing In, Ga, and Zn, an amorphous oxide containing Sn, Zn, and Ga, an amorphous oxide containing In and Zn, an amorphous oxide containing In and Sn, an amorphous oxide containing In and Ga, or an amorphous oxide containing Zn and Sn.

11. A semiconductor comprising an organic semiconductor layer and an oxide semiconductor layer, wherein the oxide semiconductor layer is formed of a polycrystalline oxide containing In and a positive divalent element.

12. A semiconductor comprising an organic semiconductor layer and an oxide semiconductor layer, wherein the oxide semiconductor layer has a stacked layer structure in which a plurality of layered oxides are stacked, and a layered oxide closest to the organic semiconductor layer is formed of a material which allows the layered oxide to have a work function larger than the work function of other layered oxides.