Semiconductor device and method for manufacturing the same
First Claim
Patent Images
1. A semiconductor device comprising:
- a thin film transistor comprising;
a gate electrode layer;
a gate insulating layer over the gate electrode layer;
a semiconductor layer over the gate insulating layer;
a first buffer layer over the semiconductor layer;
a second buffer layer over the semiconductor layer;
a source electrode layer over the first buffer layer; and
a drain electrode layer over the second buffer layer,wherein the semiconductor layer is an oxide semiconductor layer containing indium, gallium, and zinc,wherein each of the first buffer layer and the second buffer layer comprises a metal oxide,wherein an end portion of the first buffer layer is outside an end portion of the source electrode layer, andwherein an end portion of the second buffer layer is outside an end portion of the drain electrode layer.
1 Assignment
0 Petitions
Accused Products
Abstract
It is an object to provide a semiconductor device including a thin film transistor with favorable electric properties and high reliability, and a method for manufacturing the semiconductor device with high productivity. In an inverted staggered (bottom gate) thin film transistor, an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer, and a buffer layer formed using a metal oxide layer is provided between the semiconductor layer and a source and drain electrode layers. The metal oxide layer is intentionally provided as the buffer layer between the semiconductor layer and the source and drain electrode layers, whereby ohmic contact is obtained.
-
Citations
40 Claims
-
1. A semiconductor device comprising:
-
a thin film transistor comprising; a gate electrode layer; a gate insulating layer over the gate electrode layer; a semiconductor layer over the gate insulating layer; a first buffer layer over the semiconductor layer; a second buffer layer over the semiconductor layer; a source electrode layer over the first buffer layer; and a drain electrode layer over the second buffer layer, wherein the semiconductor layer is an oxide semiconductor layer containing indium, gallium, and zinc, wherein each of the first buffer layer and the second buffer layer comprises a metal oxide, wherein an end portion of the first buffer layer is outside an end portion of the source electrode layer, and wherein an end portion of the second buffer layer is outside an end portion of the drain electrode layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
-
-
11. A semiconductor device comprising:
-
a thin film transistor comprising; a gate electrode layer; a gate insulating layer over the gate electrode layer; a semiconductor layer over the gate insulating layer; a first buffer layer over the semiconductor layer; a second buffer layer over the semiconductor layer; a source electrode layer over the first buffer layer; and a drain electrode layer over the second buffer layer, wherein the semiconductor layer is an oxide semiconductor layer containing indium, gallium, and zinc, wherein a region of the semiconductor layer between the first buffer layer and the second buffer layer is thinner than a region of the semiconductor layer under the first buffer layer and a region of the semiconductor layer under the second buffer layer, wherein each of the first buffer layer and the second buffer layer comprises a metal oxide, wherein an end portion of the first buffer layer is outside an end portion of the source electrode layer, and wherein an end portion of the second buffer layer is outside an end portion of the drain electrode layer. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
-
-
21. A semiconductor device comprising:
-
a thin film transistor comprising; a gate electrode layer; a gate insulating layer over the gate electrode layer; a semiconductor layer over the gate insulating layer; a first buffer layer over the semiconductor layer; a second buffer layer over the semiconductor layer; a source electrode layer over the first buffer layer; and a drain electrode layer over the second buffer layer, wherein the semiconductor layer is an oxide semiconductor layer containing indium, gallium, and zinc, wherein each of the first buffer layer and the second buffer layer comprises a metal oxide, wherein an end portion of the first buffer layer is outside an end portion of the source electrode layer, wherein an end portion of the second buffer layer is outside an end portion of the drain electrode layer, and wherein the metal oxide comprises titanium oxide. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28, 29, 30)
-
-
31. A semiconductor device comprising:
-
a thin film transistor comprising; a gate electrode layer; a gate insulating layer over the gate electrode layer; a semiconductor layer over the gate insulating layer; a first buffer layer over the semiconductor layer; a second buffer layer over the semiconductor layer; a source electrode layer over the first buffer layer; and a drain electrode layer over the second buffer layer, wherein the semiconductor layer is an oxide semiconductor layer containing indium, gallium, and zinc, wherein a region of the semiconductor layer between the first buffer layer and the second buffer layer is thinner than a region of the semiconductor layer under the first buffer layer and a region of the semiconductor layer under the second buffer layer, wherein each of the first buffer layer and the second buffer layer comprises a metal oxide, wherein an end portion of the first buffer layer is outside an end portion of the source electrode layer, wherein an end portion of the second buffer layer is outside an end portion of the drain electrode layer, and wherein the metal oxide comprises titanium oxide. - View Dependent Claims (32, 33, 34, 35, 36, 37, 38, 39, 40)
-
Specification