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Amorphous oxide semiconductor and thin film transistor using the same

  • US 8,129,718 B2
  • Filed: 08/03/2009
  • Issued: 03/06/2012
  • Est. Priority Date: 08/28/2008
  • Status: Expired due to Fees
First Claim
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1. An amorphous oxide semiconductor containing hydrogen and at least one element of indium (In) and zinc (Zn), wherein:

  • the amorphous oxide semiconductor contains one of hydrogen atoms and deuterium atoms, whose content is more than 1×

    10 20 cm

    3
    to 1×

    1022 cm

    or less; and

    a density of bonds between oxygen and hydrogen except bonds between excess oxygen (OEx) and hydrogen in the amorphous oxide semiconductor is 1×

    1018 cm

    3
    or less.

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