Semiconductor device and method for manufacturing the semiconductor device
First Claim
1. A semiconductor device comprising:
- a thin film transistor, the thin film transistor comprising;
a gate electrode layer;
a gate insulating layer over the gate electrode layer;
an oxide semiconductor layer over the gate insulating layer;
source and drain regions over the oxide semiconductor layer; and
source and drain electrode layers over the source and drain regions,wherein there is a peak of an oxygen concentration at an interface between the gate insulating layer and the oxide semiconductor layer,wherein an oxygen concentration of the gate insulating layer has a concentration gradient,wherein the oxygen concentration is increased toward the interface between the gate insulating layer and the oxide semiconductor layer, andwherein the oxygen concentration of the oxide semiconductor layer is higher than oxygen concentrations of the source and drain regions.
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Accused Products
Abstract
An object is to provide favorable interface characteristics of a thin film transistor including an oxide semiconductor layer without mixing of an impurity such as moisture. Another object is to provide a semiconductor device including a thin film transistor having excellent electric characteristics and high reliability, and a method by which a semiconductor device can be manufactured with high productivity. A main point is to perform oxygen radical treatment on a surface of a gate insulating layer. Accordingly, there is a peak of the oxygen concentration at an interface between the gate insulating layer and a semiconductor layer, and the oxygen concentration of the gate insulating layer has a concentration gradient. The oxygen concentration is increased toward the interface between the gate insulating layer and the semiconductor layer.
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Citations
8 Claims
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1. A semiconductor device comprising:
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a thin film transistor, the thin film transistor comprising; a gate electrode layer; a gate insulating layer over the gate electrode layer; an oxide semiconductor layer over the gate insulating layer; source and drain regions over the oxide semiconductor layer; and source and drain electrode layers over the source and drain regions, wherein there is a peak of an oxygen concentration at an interface between the gate insulating layer and the oxide semiconductor layer, wherein an oxygen concentration of the gate insulating layer has a concentration gradient, wherein the oxygen concentration is increased toward the interface between the gate insulating layer and the oxide semiconductor layer, and wherein the oxygen concentration of the oxide semiconductor layer is higher than oxygen concentrations of the source and drain regions. - View Dependent Claims (2)
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3. A semiconductor device comprising:
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a thin film transistor, the thin film transistor comprising; a gate electrode layer; a gate insulating layer over the gate electrode layer; an oxide semiconductor layer over the gate insulating layer; source and drain regions over the oxide semiconductor layer; and source and drain electrode layers over the source and drain regions, wherein there is a peak of an oxygen concentration at an interface between the gate insulating layer and the oxide semiconductor layer, wherein oxygen concentrations of the gate insulating layer and the oxide semiconductor layer each have a concentration gradient, wherein the oxygen concentration is increased toward the interface between the gate insulating layer and the oxide semiconductor layer, and wherein the oxygen concentration of the oxide semiconductor layer is higher than oxygen concentrations of the source and drain regions. - View Dependent Claims (4)
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5. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a gate electrode layer over a substrate; forming a gate insulating layer over the gate electrode layer; exposing the gate insulating layer to oxygen radical so as to be reformed; forming an oxide semiconductor layer over the gate insulating layer reformed; forming source and drain regions over the oxide semiconductor layer; and forming source and drain electrode layers over the source and drain regions, wherein the gate insulating layer and the oxide semiconductor layer are formed successively without being exposed to the air, and wherein the oxygen concentration of the oxide semiconductor layer is higher than oxygen concentrations of the source and drain regions. - View Dependent Claims (6)
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7. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a gate electrode layer over a substrate; forming a gate insulating layer over the gate electrode layer; exposing the gate insulating layer to oxygen radical so as to be reformed; forming an oxide semiconductor layer over the gate insulating layer reformed; forming source and drain regions over the oxide semiconductor layer; heating the oxide semiconductor layer and the source and drain regions at a temperature of 200°
C. to 600°
C., inclusive; andforming source and drain electrode layers over the source and drain regions, wherein the gate insulating layer and the oxide semiconductor layer are formed successively without being exposed to the air, and wherein the oxygen concentration of the oxide semiconductor layer is higher than oxygen concentrations of the source and drain regions. - View Dependent Claims (8)
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Specification