Discrete stress isolator attachment structures for MEMS sensor packages

• US 8,129,801 B2
• Filed: 01/06/2006
• Issued: 03/06/2012
• Est. Priority Date: 01/06/2006
• Status: Active Grant

• Current Assignee: Honeywell International Inc.
• Original Assignee: Honeywell International Inc.
• Inventors: Eskridge, Mark H.
• Primary Examiner(s): Gebremariam, Samuel
• Assistant Examiner(s): Arena, Andrew O
• Application Number:
  US11/326,916
• Publication Number:
  US 20070170525A1
• Time in Patent Office: 2,251 Days
• Field of Search: 257/414, 257/415, 257/416, 257/417, 257/418, 257/419, 257/420, 257/688, 257/689, 257/690, 257/692, 257/698, 257/704, 257/E23.001, 257/E23.002, 257/E23.01, 257/E23.011, 257/E23.012, 257/E23.014, 257/E23.015, 257/E23.023, 257/E23.18, 257/E23.193, 257/E23.194, 438/50, 438/51, 438/52, 438/53
• US Class Current: 257/415
• CPC Class Codes: B81B 2201/0235 Accelerometers
• CPC Class Codes: B81B 2207/07 Interconnects
• CPC Class Codes: B81B 7/0048 between the MEMS die and the substrate
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/73257 Bump and wire connectors
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

Abstract

A discrete stress isolation apparatus for a Micro Electro-Mechanical System (MEMS) inertial sensor device having a mechanism die and a package. A capacitive device mechanism is formed in a substrate layer positioned between the mechanism die and package substrate. A discrete stress isolation structure is formed in the same substrate layer with but physically separated from the capacitive device mechanism. The discrete stress isolation structure is interposed between the mechanism die and the package substrate and provides the mechanical and electrical attachment therebetween.

Claims

1. A Micro Electro-Mechanical System (MEMS) sensor device, comprising:

a package substrate;

a mechanism die spaced away from the package substrate;

a mechanism device depending from the mechanism die between the mechanism die and the package substrate; and

one or more discrete isolation structures interposed between the mechanism die and the package substrate, the one or more discrete isolation structures attaching the mechanism die to the package substrate,

wherein the isolation structures and the mechanism device are composed of substantially the same semiconducting material,

wherein at least one of the isolation structures further comprises mutually isolated first and second portions spaced apart on opposite sides of a gap, the first and second portions linked by one or more flexures,

wherein the mechanism die is attached only to the first portion of the isolation structures.

2. The device of claim 1 wherein the isolation structures are connected to the mechanism die through one or more anchors.

3. The device of claim 1, further comprising stud bumps formed between one or more electrical interface pads formed on the isolation structures and one or more electrical interface pads formed on the package substrate.

4. The device of claim 1, further comprising a cover plate attached to the mechanism device opposite from the mechanism die;

and

wherein the package substrate is further structured to accommodate the cover plate.

5. The device of claim 1 wherein the mechanism device further comprises a device structured for measuring differential capacitance between different capacitors.

6. A Micro Electro-Mechanical System (MEMS) sensor device, comprising:

a package substrate having a plurality of electrical interface pads on a surface thereof;

a base wafer having a relatively thicker first substrate layer and a relatively thinner second substrate layer;

a mechanism die formed in the first substrate layer of the base wafer;

a mechanism device formed in the second substrate layer of the base wafer and depending from the mechanism die through one or more anchors; and

a plurality of discrete stress isolation structures formed from the second substrate layer of the base wafer independent of the mechanism device and depending from the mechanism die through one or more anchors, the isolation structures being attached to the electrical interface pads on the surface of the package substrate,

wherein one or more of the discrete stress isolation structures further comprises;

a first portion attached to the mechanism die through the one or more anchors, and

a second portion attached to the electrical interface pads on the surface of the package substrate,

the first and second portions spaced apart on opposite sides of a gap, and the first and second portions linked by one or more flexures.

7. The device of claim 6, further comprising one or more stud bumps attaching the isolation structures to the electrical interface pads on the surface of the package substrate.

8. The device of claim 6, further comprising a cover plate attached to the mechanism device opposite from the mechanism die, the cover plate being formed with one or more apertures sized to provide clearance around each of isolator structures;

and

wherein the package substrate further comprises a clearance aperture structured to accommodate the cover plate.

9. The device of claim 6 wherein the mechanism device further comprises a device structured for measuring differential capacitance between different capacitors.

10. The device of claim 9 wherein the mechanism device further comprises one or more moveable portions structured for motion out of a plane of the mechanism device.

11. The device of claim 9 wherein the mechanism device further comprises one or more moveable portions structured for motion in a plane of the mechanism device.