Determining endpoint in a substrate process

• US 8,130,382 B2
• Filed: 06/28/2011
• Issued: 03/06/2012
• Est. Priority Date: 11/01/2002
• Status: Expired due to Term

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Lian, Lei, Davis, Matthew Fenton
• Primary Examiner(s): Lyons, Michael A
• Application Number:
  US13/171,269
• Publication Number:
  US 20110253671A1
• Time in Patent Office: 252 Days
• Field of Search: 356/497, 356/498, 356/503, 356/504, 438/14, 438/16
• US Class Current: 356/503
• CPC Class Codes: G01B 11/0675 using interferometry
• CPC Class Codes: G01B 11/0683 measurement during deposition or removal of the layer
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge
• CPC Class Codes: H01J 37/32963 End-point detection

Abstract

An endpoint detection method for detecting an endpoint of a process comprises determining a reflectance spectrum of light reflected from a substrate, the light having a wavelength, processing the substrate while light having the wavelength is reflected from the substrate, detecting light having the wavelength after the light is reflected from the substrate, generating a signal trace of the intensity of the reflected light and normalizing the signal trace with the reflectance spectrum of the light. The normalized signal trace can then be evaluated to determine an endpoint of the process.

Claims

1. A method of processing a substrate in a process zone, the method comprising:

(a) determining a reflectance spectrum of light reflected from a substrate, the light having a wavelength;

(b) processing the substrate by exposing the substrate to an energized gas in the process zone while light having the wavelength is reflected from the substrate;

(c) detecting light having the wavelength after the light is reflected from the substrate, and generating a signal trace of the intensity of the reflected light; and

(d) normalizing the signal trace with the reflectance spectrum of the light and evaluating the normalized signal trace to determine an endpoint of the process.

2. A method according to claim 1 comprising providing a substrate comprising a mask, overlying material on the substrate, or combinations thereof.

3. A method according to claim 1 wherein (a) comprises determining a plurality of reflectance spectrums that are each at a particular wavelength.

4. A method according to claim 3 wherein (a) comprises selecting a wavelength of light that provides a local maximum of intensity from the plurality of reflectance spectrums.

5. A method according to claim 3 wherein (a) comprises reflecting light that is scanned through a sequence of successive wavelengths and measuring the reflectance spectrum at different wavelengths.

6. A method according to claim 5 wherein (a) comprises scanning through wavelengths of from about 200 to about 800 nm.

7. A method according to claim 3 wherein (a) comprises directing a broadband spectrum of light at the substrate, and detecting a reflectance spectrum of the reflected light at each of a plurality of different wavelengths.

8. A method according to claim 1 wherein the substrate comprises a layer, and the method comprises selecting the wavelength of light such that an internal reflection of light having the wavelength from an interface between the layer and the substrate, and a surface reflection of the light from the layer, are substantially in phase.

9. A method according to claim 1 wherein the substrate comprises a patterned overlying material and an underlying material,

wherein (a) comprises, in an initial stage, determining a reflectance spectrum of light reflected from the underlying material of the substrate when it is substantially absent the patterned overlying material;

and

wherein (d) comprises normalizing the signal trace of the detected light that is reflected from the substrate having the patterned overlying material by the intensity of the reflectance spectrum of the underlying material of the substrate.

10. A method according to claim 1 wherein the substrate comprises a layer, and further comprising selecting a wavelength of light at which the layer is substantially permeable to light having the wavelength.

11. A method according to claim 1 comprising providing a substrate comprising a mask, and wherein in (a), a first portion of light having the wavelength is reflected from the surface of the mask and another portion of the light passes through the mask and is reflected from the interface between the mask and the substrate, and the wavelength is the wavelength of light at which the interface and mask surface reflections of light are substantially in phase upon emerging from the substrate.

12. A method according to claim 1 wherein the substrate comprises polysilicon exposed between features of a nitride mask, wherein (b) comprises providing an energized gas capable of etching the polysilicon, and wherein in (a) the wavelength of the light is from about 200 to about 800 nm.

13. A method of processing a substrate in a process zone, the substrate comprising an overlying material and an underlying material below the overlying material, the method comprising:

(a) determining a reflectance spectrum of light reflected from the underlying material of the substrate when it is substantially absent the overlying material;

(b) processing the substrate having the overlying material and the underlying material, by exposing the substrate to an energized gas in the process zone while light having the wavelength is reflected from the substrate; and

(c) during (b), detecting light having the wavelength after the light is reflected from the substrate, and generating a signal trace of the intensity of the reflected light;

(d) normalizing the signal trace with the reflectance spectrum of the light from the underlying material; and

(e) evaluating the normalized signal trace to determine an endpoint of the process.

14. A method according to claim 13 wherein (a) comprises selecting the wavelength of the light such that light having the wavelength provides a local maximum of intensity from the overlying material.

15. A method according to claim 14 wherein (a) comprises reflecting light that is scanned through a sequence of successive wavelengths and measuring the reflectance spectrum at different wavelengths.

16. A method according to claim 15 wherein (a) comprises scanning through wavelengths of from about 200 to about 800 nm.

17. A method according to claim 14 wherein (a) comprises directing a broadband spectrum of light at the substrate, and detecting a reflectance spectrum of the reflected light at each of a plurality of different wavelengths.

18. A method according to claim 14 comprising selecting the wavelength of light such that an internal reflection of the light from an interface between the overlying material and the substrate, and a surface reflection of the light from the overlying material, are substantially in phase.

19. A method according to claim 14 wherein the substrate comprises a patterned overlying material.

20. A method according to claim 13 wherein the substrate comprises polysilicon exposed between features of a nitride mask, wherein (b) comprises providing an energized gas capable of etching the polysilicon, and wherein in (a) the wavelength of the light is from about 200 to about 800 nm.