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BIAS voltage generation circuit for an SOI radio frequency switch

  • US 8,131,225 B2
  • Filed: 12/23/2008
  • Issued: 03/06/2012
  • Est. Priority Date: 12/23/2008
  • Status: Active Grant
First Claim
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1. A method of operating a semiconductor circuit comprising:

  • providing a semiconductor circuit including;

    a radio frequency (RF) switch including at least one field effect transistor located on a semiconductor-on-insulator (SOI) substrate;

    a radio frequency (RF) signal line for transmitting a radio frequency (RF) signal, wherein said RF signal line is connected to said RF switch; and

    a circuitry that generates, from said RF signal, at least one bias voltage having a time-dependent modulated magnitude that is proportional to a time-dependent magnitude of said RF signal, and changes over a time scale that is at least one order of magnitude greater than a period of said RF signal; and

    supplying said at least one bias voltage to a bottom semiconductor layer underlying a buried insulator layer of said SOI substrate.

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