Method of forming a micromagnetic device

• US 8,133,529 B2
• Filed: 09/10/2007
• Issued: 03/13/2012
• Est. Priority Date: 09/10/2007
• Status: Active Grant

• Current Assignee: Altera Corporation (Intel Corporation)
• Original Assignee: Enpirion, Inc. (Intel Corporation)
• Inventors: Lotfi, Ashraf W., Liakopoulos, Trifon M., Filas, Robert W.
• Primary Examiner(s): Cleveland, Michael
• Assistant Examiner(s): TADAYYON ESLAMI, TABASSOM
• Application Number:
  US11/852,698
• Publication Number:
  US 20090068347A1
• Time in Patent Office: 1,646 Days
• Field of Search: 427/128, 427/132, 427/130
• US Class Current: 427/128
• CPC Class Codes: H01F 1/15333 containing nanocrystallites, e.g. obtained by annealing
• CPC Class Codes: H01F 10/132 containing cobalt
• CPC Class Codes: H01F 10/265 Magnetic multilayers non exchange-coupled H01F10/32 takes precedence
• CPC Class Codes: H01F 17/0033 with the coil helically wound around a magnetic core
• CPC Class Codes: H01F 41/046 structurally combined with ferromagnetic material
• CPC Class Codes: H01L 28/10 Inductors

Abstract

A method of forming a micromagnetic device including providing a substrate and forming a magnetic core layer over the substrate from a magnetic alloy. The magnetic alloy includes iron, cobalt and phosphorous. A content of the cobalt is in a range of 1.8 to 4.5 atomic percent. A content of the phosphorus is in a range of 20.1 to 30 atomic percent. A content of the iron is substantially a remaining proportion of the magnetic alloy.

Claims

1. A method of forming a micromagnetic device, comprising:

providing a substrate; and

forming a magnetic core layer over said substrate from a magnetic alloy including iron, cobalt, phosphorous and at least one of sulfur, vanadium, tungsten and copper, wherein a content of said at least one of sulfur, vanadium, tungsten and copper is in a range of 1 to 100 parts per million, a content of said cobalt is in a range of 1.8 to 4.5 atomic percent, a content of said phosphorus is in a range of 20.1 to 30 atomic percent, and a content of said iron is substantially a remaining proportion of said magnetic alloy.

2. The method as recited in claim 1 further comprising forming another magnetic core layer over said magnetic core layer.

3. The method as recited in claim 1 wherein said magnetic alloy is an amorphous or nanocrystalline magnetic alloy.

4. The method as recited in claim 1 further comprising forming an insulating layer between said substrate and said magnetic core layer.

5. The method as recited in claim 1 further comprising forming a conductive winding layer and an insulating layer between said substrate and said magnetic core layer.

6. The method as recited in claim 1 further comprising forming an adhesive layer between said substrate and said magnetic core layer.

7. The method as recited in claim 1 further comprising forming a seed layer between said substrate and said magnetic core layer.

8. The method as recited in claim 1 further comprising forming a protective layer over said magnetic core layer.

9. The method as recited in claim 1 further comprising forming an insulating layer over said magnetic core layer.

10. The method as recited in claim 1 further comprising forming an insulating layer and a conductive winding layer over said magnetic core layer.

11. A method of forming a micromagnetic device, comprising:

providing a substrate;

forming a magnetic core layer over said substrate from a magnetic alloy;

forming an insulating layer over said magnetic core layer; and

forming another magnetic core layer over said insulating layer from a magnetic alloy, wherein at least one of said magnetic alloys include iron, cobalt, phosphorous and at least one of sulfur, vanadium, tungsten and copper, wherein a content of said at least one of sulfur, vanadium, tungsten and copper is in a range of 1 to 100 parts per million, a content of said cobalt is in a range of 1.8 to 4.5 atomic percent, a content of said phosphorus is in a range of 20.1 to 30 atomic percent, and a content of said iron is substantially a remaining proportion of said at least one of said magnetic alloys.

12. The method as recited in claim 11 wherein said substrate is formed from a silicon, glass or ceramic material.

13. The method as recited in claim 11 wherein at least one said magnetic alloys is an amorphous or nanocrystalline magnetic alloy.

14. The method as recited in claim 11 further comprising forming a conductive winding layer and another insulating layer between said substrate and said magnetic core layer.

15. The method as recited in claim 11 further comprising forming an adhesive layer and a seed layer between said substrate and said magnetic core layer.

16. The method as recited in claim 11 further comprising forming a protective layer between said magnetic core layer and said insulating layer.

17. The method as recited in claim 11 further comprising forming an adhesive layer and a seed layer between said insulating layer and said another magnetic core layer.

18. The method as recited in claim 11 further comprising forming a protective layer over said another magnetic core layer.

19. The method as recited in claim 11 further comprising forming another insulating layer over said another magnetic core layer.

20. The method as recited in claim 11 further comprising forming another insulating layer and a conductive winding layer over said another magnetic core layer.