Thin film transistor, active matrix substrate, and image pickup device
First Claim
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1. An active matrix substrate comprising:
- a plurality of thin film transistors, each thin film transistor comprising;
source and drain electrodes,an active layer that contacts the source and drain electrodes and contains an oxide semiconductor, a gate electrode that controls current flowing between the source and drain electrodes via the active layer,a first insulating film that separates the gate electrode from the source and drain electrodes and the active layer,a bias electrode that is arranged at the opposite side of the active layer from the gate electrode, and has an electric potential fixed independently from the gate electrode, anda second insulating film that separates the bias electrode from the source and drain electrodes and the active layer, whereinthe plurality of thin film transistors are arranged on a support, andall the bias electrodes are interconnected such that they are all electrically common with one another.
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Abstract
A thin film transistor including: source and drain electrodes, an active layer that contacts the source and drain electrodes and contains an oxide semiconductor, a gate electrode that controls current flowing between the source and drain electrodes via the active layer, a first insulating film that separates the gate electrode from the source and drain electrodes and the active layer, a bias electrode that is arranged at the opposite side of the active layer from the gate electrode, and has an electric potential fixed independently from the gate electrode, and a second insulating film that separates the bias electrode from the source and drain electrodes and the active layer.
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Citations
5 Claims
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1. An active matrix substrate comprising:
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a plurality of thin film transistors, each thin film transistor comprising; source and drain electrodes, an active layer that contacts the source and drain electrodes and contains an oxide semiconductor, a gate electrode that controls current flowing between the source and drain electrodes via the active layer, a first insulating film that separates the gate electrode from the source and drain electrodes and the active layer, a bias electrode that is arranged at the opposite side of the active layer from the gate electrode, and has an electric potential fixed independently from the gate electrode, and a second insulating film that separates the bias electrode from the source and drain electrodes and the active layer, wherein the plurality of thin film transistors are arranged on a support, and all the bias electrodes are interconnected such that they are all electrically common with one another. - View Dependent Claims (2, 3, 4, 5)
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Specification
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Current AssigneeSamsung Display Company Limited (Samsung Electronics Co. Ltd.)
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Original AssigneeFujifilm Corporation (Fujifilm Holdings Corporation)
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InventorsImai, Shinji
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Primary Examiner(s)Mandala, Victor A
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Assistant Examiner(s)Stowe, Scott
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Application NumberUS12/538,890Publication NumberTime in Patent Office945 DaysField of Search257/43, 257/E31.086, 257/E31.092, 257/59, 257/72, 257/E27.146, 250/370.09US Class Current257/43CPC Class CodesH01L 27/14676 X-ray, gamma-ray or corpusc...H01L 29/4908 for thin film semiconductor...H01L 29/78636 with supplementary region o...H01L 29/78648 arranged on opposing sides ...H01L 29/7869 having a semiconductor body...
