Semiconductor device including zinc oxide containing semiconductor film
First Claim
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1. A semiconductor device comprising:
- a gate electrode;
a gate insulating film over the gate electrode;
a metal film over the gate insulating film;
a conductive film comprising an oxide over and in contact with the metal film; and
a semiconductor film over and in contact with the conductive film and the gate insulating film,wherein the conductive film has been etched in a portion over the metal film,wherein the portion is not in contact with the semiconductor film.
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Abstract
To provide a semiconductor device in which a defect or fault is not generated and a manufacturing method thereof even if a ZnO semiconductor film is used and a ZnO film to which an n-type or p-type impurity is added is used for a source electrode and a drain electrode. The semiconductor device includes a gate insulating film formed by using a silicon oxide film or a silicon oxynitride film over a gate electrode, an Al film or an Al alloy film over the gate insulating film, a ZnO film to which an n-type or p-type impurity is added over the Al film or the Al alloy film, and a ZnO semiconductor film over the ZnO film to which an n-type or p-type impurity is added and the gate insulating film.
325 Citations
30 Claims
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1. A semiconductor device comprising:
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a gate electrode; a gate insulating film over the gate electrode; a metal film over the gate insulating film; a conductive film comprising an oxide over and in contact with the metal film; and a semiconductor film over and in contact with the conductive film and the gate insulating film, wherein the conductive film has been etched in a portion over the metal film, wherein the portion is not in contact with the semiconductor film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor device comprising:
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a metal film over a substrate; a conductive film comprising an oxide over and in contact with the metal film; a semiconductor film over and in contact with the conductive film; and a gate electrode adjacent to the semiconductor film with a gate insulating film interposed therebetween, wherein the conductive film has been etched in a portion over the metal film, wherein the portion is not in contact with the semiconductor film. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. A semiconductor device comprising:
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a gate electrode over a substrate; a gate insulating film over the gate electrode; a metal film over the gate insulating film; a conductive film comprising an oxide over and in contact with the metal film; a semiconductor film over and in contact with the conductive film and the gate insulating film; an inorganic film over the semiconductor film; and an organic resin film over the inorganic film, wherein the conductive film has been etched in a portion over the metal film, wherein the portion is not in contact with the semiconductor film. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28, 29, 30)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsAkimoto, Kengo
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Primary Examiner(s)Pizarro, Marcos D.
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Assistant Examiner(s)MONTALVO, EVA Y
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Application NumberUS11/598,669Publication NumberTime in Patent Office1,946 DaysField of Search257/223, 257/227, 257/291, 257/292, 257/439, 257/443, 257/655, 257/43US Class Current257/72CPC Class CodesH01L 27/1214 comprising a plurality of T...H01L 27/1225 with semiconductor material...H01L 27/1255 integrated with passive dev...H01L 29/41733 for thin film transistors w...H01L 29/45 Ohmic electrodesH01L 29/4908 for thin film semiconductor...H01L 29/78621 with LDD structure or an ex...H01L 29/7869 having a semiconductor body...
