Semiconductor device including zinc oxide containing semiconductor film
First Claim
Patent Images
1. A semiconductor device comprising:
- a gate electrode;
a gate insulating film over the gate electrode;
a metal film over the gate insulating film;
a conductive film comprising an oxide over and in contact with the metal film; and
a semiconductor film over and in contact with the conductive film and the gate insulating film,wherein the conductive film has been etched in a portion over the metal film,wherein the portion is not in contact with the semiconductor film.
1 Assignment
0 Petitions
Accused Products
Abstract
To provide a semiconductor device in which a defect or fault is not generated and a manufacturing method thereof even if a ZnO semiconductor film is used and a ZnO film to which an n-type or p-type impurity is added is used for a source electrode and a drain electrode. The semiconductor device includes a gate insulating film formed by using a silicon oxide film or a silicon oxynitride film over a gate electrode, an Al film or an Al alloy film over the gate insulating film, a ZnO film to which an n-type or p-type impurity is added over the Al film or the Al alloy film, and a ZnO semiconductor film over the ZnO film to which an n-type or p-type impurity is added and the gate insulating film.
-
Citations
30 Claims
-
1. A semiconductor device comprising:
-
a gate electrode; a gate insulating film over the gate electrode; a metal film over the gate insulating film; a conductive film comprising an oxide over and in contact with the metal film; and a semiconductor film over and in contact with the conductive film and the gate insulating film, wherein the conductive film has been etched in a portion over the metal film, wherein the portion is not in contact with the semiconductor film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
-
-
11. A semiconductor device comprising:
-
a metal film over a substrate; a conductive film comprising an oxide over and in contact with the metal film; a semiconductor film over and in contact with the conductive film; and a gate electrode adjacent to the semiconductor film with a gate insulating film interposed therebetween, wherein the conductive film has been etched in a portion over the metal film, wherein the portion is not in contact with the semiconductor film. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
-
-
21. A semiconductor device comprising:
-
a gate electrode over a substrate; a gate insulating film over the gate electrode; a metal film over the gate insulating film; a conductive film comprising an oxide over and in contact with the metal film; a semiconductor film over and in contact with the conductive film and the gate insulating film; an inorganic film over the semiconductor film; and an organic resin film over the inorganic film, wherein the conductive film has been etched in a portion over the metal film, wherein the portion is not in contact with the semiconductor film. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28, 29, 30)
-
Specification