Electronically tunable microwave reflector

• US 8,134,521 B2
• Filed: 10/31/2007
• Issued: 03/13/2012
• Est. Priority Date: 10/31/2007
• Status: Active Grant

• Current Assignee: Raytheon Company (Rtx Corporation)
• Original Assignee: Raytheon Company (Rtx Corporation)
• Inventors: Herz, Paul R., Sievenpiper, Daniel
• Primary Examiner(s): Ismail, Shawki S
• Assistant Examiner(s): Hammond, Crystal L
• Application Number:
  US11/980,913
• Publication Number:
  US 20090109121A1
• Time in Patent Office: 1,595 Days
• Field of Search: 343/909, 343/745, 343/754
• US Class Current: 343/912
• CPC Class Codes: H01Q 15/0053 Selective devices used as spatial filter or angular sidelobe filter
• CPC Class Codes: H01Q 15/0066 said selective devices being reconfigurable, tunable or controllable, e.g. using switches
• CPC Class Codes: H01Q 15/14 Reflecting surfaces; Equivalent structures electromagnetic shields H01Q1/526

Abstract

Exemplary embodiments of a structured surface are described which can efficiently reflect, steer or focus incident electromagnetic radiation. The surface impedance may be adjustable and can impart a phase shift to the incident wave using tunable electrical components of the surface. An array of electrodes interconnected by variable capacitors may be used for beam steering and phase modulation. In an exemplary embodiment, the electrodes have a circular configuration.

Claims

1. An electronically tunable microwave reflector, comprising:

a ground plane, the ground plane having a ground plane surface;

an array of generally flat, circular disk metal electrodes arranged in a single layer of rows and columns in a two-dimensional lattice spaced vertically from the ground plane surface by a distance less than a wavelength of microwave energy to be reflected by the reflector, the electrodes having a diameter less than said wavelength, each of the electrodes being

adjacent to up to two of the electrodes in a same one of the rows,

adjacent to up to two of the electrodes in a same one of the columns, and

diagonal to up to four of the electrodes in adjacent ones of the rows and columns;

a corresponding array of vertical three-dimensional conductor-free regions above the ground plane and between diagonal electrodes, the regions having a lattice cross-sectional area of at least one-half that of the electrodes;

a plurality of variable capacitance structures arranged for controllably varying a capacitance between adjacent ones of said electrodes;

a first array of conductors connecting a first set of the metal electrodes to the ground plane surface; and

a second array of conductors connecting a second set of the metal electrodes to respective bias voltage sources.

2. The reflector of claim 1, further comprising a dielectric substrate having a top surface and a bottom surface, wherein:

the array of electrodes is disposed on the top surface;

the ground plane surface is disposed on the bottom surface;

the first array of conductors includes a first array of metal vias formed through the substrate, each respectively coupled between one of the first set of the electrodes and the ground plane surface; and

the second array of conductors includes a second array of metal vias formed through the substrate, each respectively coupled between one of the second set of the electrodes and one of the respective bias voltage sources.

3. The reflector of claim 1, in which respective ones of the first set of the electrodes alternate with respective ones of the second set of the electrodes.

4. The reflector of claim 1, wherein the variable capacitance structures include varactor circuit devices.

5. The reflector of claim 1, wherein the electrode diameter is about 3 mm, and the reflector has an operating frequency at 10 GHz.

6. The reflector of claim 1, wherein the electrode diameter is in a range of one half to one tenth of said wavelength.

7. A tunable impedance surface structure for reflecting RF energy, comprising:

a dielectric substrate;

a ground plane having a ground plane surface arranged at a lower surface of the substrate;

a plurality of flat circular disk conductive electrodes arranged in a single layer of rows and columns on an upper surface of the substrate and spaced vertically from said ground plane by a distance less than a wavelength at an operating RF frequency, each of the electrodes being

adjacent to up to two of the electrodes in a same one of the rows,

adjacent to up to two of the electrodes in a same one of the columns, and

diagonal to up to four of the electrodes in adjacent ones of the rows and columns;

a corresponding plurality of vertical three-dimensional conductor-free regions above the ground plane and between diagonal electrodes, the regions having a lattice cross-sectional area of at least one-half that of the electrodes;

a plurality of variable capacitance structures electrically connected between adjacent ones of the plurality of electrodes, said variable capacitance structures respectively arranged for controllably varying the capacitance between said adjacent electrodes;

a first array of conductors connecting a first set of the electrodes to the ground plane surface; and

a second array of conductors connecting a second set of the electrodes to respective bias voltage sources,

wherein the arrangement of the plurality of conductive electrodes, the plurality of vertical conductor-free regions, and the plurality of variable capacitance structures combine to provide low edge parasitic capacitance between adjacent electrodes and capacitance tuning over a frequency range of operation.

8. The structure of claim 7, wherein the plurality of conductive electrodes are arranged in a two-dimensional array.

9. The structure of claim 8, in which respective ones of the first set of the electrodes alternate with respective ones of the second set of the electrodes.

10. The structure of claim 7, wherein the variable capacitance structures include varactor circuit devices.

11. Original) The structure of claim 7, wherein the electrode diameter is about 3 mm, and the surface has an operating frequency at 10 GHz.

12. The structure of claim 7, wherein the electrode diameter is in a range of one half to one tenth of said operating wavelength.

13. A tunable impedance surface structure for reflecting, steering, or focusing electromagnetic energy, comprising:

an electrically conductive ground plane;

a plurality of flat circular disk electrically conductive electrodes arranged in a single layer of rows and columns in a two-dimensional lattice structure spaced vertically from said ground plane by a distance less than a wavelength at an operating frequency of the electromagnetic energy, each of the electrodes being

adjacent to up to two of the electrodes in a same one of the rows,

adjacent to up to two of the electrodes in a same one of the columns, and

diagonal to up to four of the electrodes in adjacent ones of the rows and columns;

a corresponding plurality of vertical three-dimensional conductor-free regions above the ground plane and between diagonal electrodes, the regions having a lattice cross-sectional area of at least one-half that of the electrodes; and

a plurality of variable capacitance structures electrically connected between adjacent ones of the plurality of electrodes, said variable capacitance structures respectively arranged for controllably varying the capacitance between said adjacent electrodes, wherein

the arrangement of the plurality of conductive electrodes, the plurality of vertical conductor-free regions, and the plurality of variable capacitance structures combine to provide low edge parasitic capacitance between adjacent electrodes and capacitance tuning over a frequency range of operation,

the electrodes have a diameter which is a fraction of said wavelength, and

the electrodes are spaced from adjacent electrodes by a spacing distance which is less than said wavelength.

14. The structure of claim 13,

wherein said two-dimensional lattice structure is defined by a closely packed arrangement of unit electrode cell structures, each comprising one of said electrodes, and

wherein said cell structures have a unit cell length in a range of one half to one tenth of said wavelength.

15. The structure of claim 13, wherein the variable capacitance structures include varactor circuit devices.