IC card

• US 8,136,725 B2
• Filed: 07/28/2009
• Issued: 03/20/2012
• Est. Priority Date: 08/29/2003
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei
• Primary Examiner(s): Le, Thien M
• Application Number:
  US12/510,668
• Publication Number:
  US 20090283886A1
• Time in Patent Office: 966 Days
• Field of Search: 235/380, 235/492, 235/451, 235/449, 257/635, 257/754, 438/30, 438/462
• US Class Current: 235/380
• CPC Class Codes: G06K 19/0704 the battery being rechargeable, e.g. solar batteries
• CPC Class Codes: G06K 19/072 the record carrier comprising a plurality of integrated circuit chips
• CPC Class Codes: G06K 19/0723 the record carrier comprising an arrangement for non-contact communication, e.g. wireless communication circuits on transponder cards, non-contact smart cards or RFIDs
• CPC Class Codes: G06K 19/077 Constructional details, e.g. mounting of circuits in the carrier
• CPC Class Codes: G06K 19/07703 the interface being visual
• CPC Class Codes: G06K 19/07743 External electrical contacts
• CPC Class Codes: G06K 19/07747 at least one of the integrated circuit chips being mounted as a module
• CPC Class Codes: G06K 19/07749 the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 2224/45147 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 23/5388 for flat cards, e.g. credit cards cards per se G06K19/00
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01015 Phosphorus [P]
• CPC Class Codes: H01L 2924/01047 Silver [Ag]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/12044 : OLED
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding

Abstract

The present invention includes an IC card that can realize high function without increasing the size of an IC chip, and that can realize cost reduction. The IC card has a first single crystal integrated circuit, a second integrated circuit, and a display device. The second integrated circuit and the display device are each formed from a thin film semiconductor film, over a plastic substrate, and the first single crystal integrated circuit is mounted on the plastic substrate so as to be electrically connected to the second integrated circuit.

Claims

1. A device comprising:

a plastic substrate;

a first single crystal integrated circuit mounted over the plastic substrate;

a second integrated circuit mounted over the plastic substrate; and

a display device mounted over the plastic substrate;

wherein the second integrated circuit and the display device each comprise a semiconductor element;

wherein the semiconductor element comprises a semiconductor film including a channel formation region;

wherein the display device is an active matrix type;

wherein the first single crystal integrated circuit comprises an analog circuit and a radio frequency circuit, and the second integrated circuit comprises a digital circuit;

wherein the semiconductor element is formed over an oxide film;

wherein the oxide film is bonded to the plastic substrate with an adhesive agent;

wherein the first single crystal integrated circuit is electrically connected to the second integrated circuit, and

wherein a thickness of the second integrated circuit is 1 μ

m or more and 5 μ

m or less.

2. The device according to claim 1, wherein the first single crystal integrated circuit is mounted over the plastic substrate by a chip on glass method.

3. The device according to claim 1, wherein the device has a card-shape having a thickness of 0.5 mm or more and 1.5 mm or less.

4. The device according to claim 1,

wherein the first single crystal integrated circuit is packed, and

wherein a mode of packaging is selected from the group consisting of Chip Size Package, Multi Chip Package, Dual In-line Package, Quad Flat Package, and Small Outline Package.

5. The device according to claim 1, wherein the oxide film is a silicon oxide film.

6. The device according to claim 1, wherein the first single crystal integrated circuit is electrically connected with an antenna coil.

7. The device according to claim 1, wherein the display device is a liquid crystal display device.

8. The device according to claim 1, wherein the display device is a light emitting device.

9. A device comprising:

a plastic substrate;

a first single crystal integrated circuit mounted over a concave portion of the plastic substrate;

a display device mounted over the plastic substrate; and

a second integrated circuit mounted over the plastic substrate,

wherein the second integrated circuit comprises a semiconductor element;

wherein the semiconductor element comprises a semiconductor film comprising a channel formation region;

wherein the display device is an active matrix type;

wherein the first single crystal integrated circuit comprises an analog circuit and a radio frequency circuit, and the second integrated circuit comprises a digital circuit;

wherein the semiconductor element is formed over an oxide film;

wherein the oxide film is bonded to the plastic substrate with an adhesive agent; and

wherein the first single crystal integrated circuit is electrically connected to the second integrated circuit.

10. The device according to claim 9, wherein the first single crystal integrated circuit is mounted over the plastic substrate by a chip on glass method.

11. The device according to claim 9, wherein a thickness of the second integrated circuit is 1 μ

m or more and 5 μ

m or less.

12. The device according to claim 9, wherein the device has a card-shape having a thickness of 0.5 mm or more and 1.5 mm or less.

13. The device according to claim 9,

wherein the first single crystal integrated circuit is packed, and

wherein a mode of packaging is selected from the group consisting of Chip Size Package, Multi Chip Package, Dual In-line Package, Quad Flat Package, and Small Outline Package.

14. The device according to claim 9, wherein the oxide film is from 150 to 300 nm in thickness.

15. The device according to claim 9, wherein the first single crystal integrated circuit is electrically connected with an antenna coil.

16. A device comprising:

a plastic substrate;

a first single crystal integrated circuit mounted over the plastic substrate;

a second integrated circuit mounted over the plastic substrate;

a display device mounted over the plastic substrate; and

a covering material over the first single crystal integrated circuit and the second integrated circuit,

wherein the display device comprises a semiconductor element;

wherein the semiconductor element comprises a semiconductor film including a channel formation region;

wherein the display device is an active matrix type;

wherein the first single crystal integrated circuit comprises an analog circuit and a radio frequency circuit, and the second integrated circuit comprises a digital circuit;

wherein the semiconductor element is formed over an oxide film;

wherein the oxide film is bonded to the plastic substrate with an adhesive agent; and

wherein the first single crystal integrated circuit is electrically connected to the second integrated circuit.

17. The device according to claim 16 wherein the semiconductor film comprises silicon.

18. The device according to claim 16, wherein the first single crystal integrated circuit is mounted over the plastic substrate by a chip on glass method.

19. The device according to claim 16,

wherein the first single crystal integrated circuit is packed, and

wherein a mode of packaging is selected from the group consisting of Chip Size Package, Multi Chip Package, Dual In-line Package, Quad Flat Package, and Small Outline Package.

20. The device according to claim 16, wherein the device has a card-shape having a thickness of 0.5 mm or more and 1.5 mm or less.