Method of fabricating a membrane having a tapered pore

• US 8,137,569 B2
• Filed: 03/23/2009
• Issued: 03/20/2012
• Est. Priority Date: 03/31/2008
• Status: Active Grant

• Current Assignee: Oxford Nanopore Technologies Limited, Sony Deutschland GmbH (Sony Group Corp.)
• Original Assignee: Oxford Nanopore Technologies Limited, Sony Deutschland GmbH (Sony Group Corp.)
• Inventors: Harnack, Oliver, Wessels, Jurina, Yasuda, Akio, Clarke, James, Reid, Terry
• Primary Examiner(s): Alanko, Anita
• Application Number:
  US12/409,007
• Publication Number:
  US 20090274870A1
• Time in Patent Office: 1,093 Days
• Field of Search: 216/56
• US Class Current: 216/2
• CPC Class Codes: B01D 69/10 Supported membranes; Membrane supports
• CPC Class Codes: B01D 69/105 Support pretreatment
• CPC Class Codes: B01D 69/106 Membranes in the pores of a support, e.g. polymerized in the pores or voids
• CPC Class Codes: B01D 69/144 containing embedded or bound biomolecules
• CPC Class Codes: B81B 2201/058 Microfluidics not provided for in B81B2201/051 - B81B2201/054
• CPC Class Codes: B81B 2203/0127 Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
• CPC Class Codes: B81C 1/00087 Holes
• CPC Class Codes: B81C 2201/112 Depositing an anti-stiction or passivation coating, e.g. on the elastic or moving parts
• CPC Class Codes: Y10T 428/24322 Composite web or sheet
• CPC Class Codes: Y10T 428/24331 including nonapertured component
• CPC Class Codes: Y10T 428/24967 Absolute thicknesses specified
• CPC Class Codes: Y10T 428/24975 No layer or component greater than 5 mils thick
• CPC Class Codes: Y10T 428/249961 With gradual property change within a component

Abstract

A method of fabricating a membrane having a tapered pore, a polymeric membrane having a tapered pore, and uses of such polymeric membrane are disclosed. The membrane includes apertures of increasing diameter which are aligned with each other to form the tapered pore.

Claims

1. A method of fabricating a membrane having a tapered pore, said method comprising the steps:

a) providing a substrate,

b) depositing an anti-sticking layer on said substrate,

c) depositing a first polymeric layer of a first polymeric material on said anti-sticking layer,

d) introducing a first aperture into said first polymeric layer, said first aperture having a first diameter,

e) depositing a second polymeric layer of a second polymeric material onto said first polymeric layer, which second polymeric layer is located on said first polymeric layer and wherein a part of said second polymeric material also extends into and fills said first aperture,

f) introducing a second aperture into said second polymeric layer, said second aperture having a second diameter which is larger than said first diameter, said second aperture being aligned with said first aperture, such that said part of said second polymeric material, which extends into and fills said first aperture, becomes removed,

g) repeating steps e) and f) n-times, thus generating a third, fourth, . . . (n+2)th polymeric layer having a third, fourth, . . . (n+2)th aperture in said third, fourth, . . . . (n+2)th polymeric layer, said third, fourth, . . . (n+2)th aperture having a third, fourth, . . . (n+2)th diameter which is increasingly larger with increasing n, n being an integer from 0 to 10,

said method thus resulting in a polymeric membrane on an anti-sticking layer and a substrate, said polymeric membrane having a tapered pore comprising (n+2) apertures of increasing diameter, said (n+2) apertures being aligned with each other to form said tapered pore.

2. The method according to claim 1, wherein said (n+2) apertures are concentrically aligned.

3. The method according to claim 1, wherein said first diameter is in the range from 1 nm to 100 μ

m, preferably from 1 nm to 10 μ

m.

4. The method according to claim 1, wherein said first polymeric layer has a height in the range from 0.3 nm to 20 μ

m, preferably 0.3 nm to 2 μ

m, and wherein said second and, if present, third, fourth, . . . (n+2)th polymeric layer has a height in the range from 500 nm to 1 mm, preferably 5 μ

m to 50 μ

m.

5. The method according to claim 1, wherein the ratio of said first diameter:

height of said first polymeric layer is >

3.

6. The method according to claim 1, wherein said substrate is made of a material selected from the group comprising glass, silicon, silicon oxide, silicon nitride, GaAs, saphire, polycarbide, and polycarbonate.

7. The method according to claim 1, wherein said anti-sticking layer is made of a material which is a metal with a weak adhesion to the substrate and has a thickness in the range from 10 nm to 100 nm.

8. The method according claim 1, wherein said first, second and, if present, third, fourth, . . . (n+2)th polymeric material is, independently, at each occurrence, selected from the group comprising of resists for optical lithography, electron beam lithography, and imprint lithography.

9. The method according to claim 1, wherein step b) occurs by a method selected from evaporation, sputtering, e-gun evaporation, gas-phase-deposition, sublimation, or electro-chemical deposition.

10. The method according to claim 1, wherein steps c) and e) are independently performed by a method selected from spin coating, dip coating, spray coating, vacuum deposition, Langmuir Blodgett techniques, or deposition from the gas-phase.

11. The method according to claim 1, wherein steps d) and f) are independently performed by a method selected from optical lithography, electron beam lithography, imprint lithography, and focused ion beam etching.

12. The method according to claim 1, wherein in steps d) and f), a plurality of first and second apertures are introduced.

13. The method according to claim 8, wherein said resists for optical lithography, electron beam lithography and imprint lithography are selected from the group comprising negative and positive tone resists for optical lithography, electron beam lithography and imprint lithography.

14. The method according to claim 1, further comprising the step:

h) removing said substrate by peeling off said polymeric membrane on and together with said anti-sticking layer from said substrate.

15. The method according to claim 14, further comprising the step:

i) removing said anti-sticking layer by dry etching, or wet chemical etching.

16. The method according to claim 1, further comprising the step:

i′

) introducing an aperture into said anti-sticking layer by dry etching, or wet chemical etching, and using said first polymeric layer as an etching mask.

17. The method according to claim 1, further comprising the step:

h′

) selectively etching said polymeric membrane on said anti-sticking layer and said substrate by using dry plasma etching, or chemical wet etching, to reduce the total thickness of said polymeric membrane, and, optionally, removing said substrate by peeling off said polymeric membrane on and together with said anti-sticking layer from said substrate.

18. The method according to claim 16, further comprising the step:

k) selectively etching said polymeric membrane on said anti-sticking layer and, if present, on said substrate, by using dry plasma etching, or chemical wet etching, to reduce the total thickness of said polymeric membrane, and, optionally, removing said substrate, if present, by peeling off said polymeric membrane on and together with said anti-sticking layer from said substrate.

19. The method according claim 14, wherein, after removal of said substrate, said polymeric membrane and/or, if present, said anti-sticking layer is/are further surface modified by a method selected from

a) immobilizing functional groups or molecules thereon to match the surface properties of a lipid bilayer to be introduced into said first aperture or into said aperture in said anti-sticking layer,

b) surface activation by introducing OH-groups through 0₂-plasma treatment

c) enhancing the surface roughness by etching,

d) deposition of one or several functional layers, e.g. by dip coating, gas-phase deposition or evaporation, and any combination of steps a)-d).

20. The method according to claim 19, wherein said functional layer is selected from fluorosilanes, alkylsilanes, or fluorinated plasma components from CHF₃, or CF₄.

21. The method according to claim 15 or 16, wherein said wet chemical etching is KI/I₂-etching to remove gold, or etching using a strong base to remove aluminum, and wherein said dry etching is dry argon-etching.

22. The method according to claim 17 or 18, wherein said dry plasma etching is O₂ plasma etching, and wherein said chemical wet etching is oxidation in H₂SO₄/H₂O₂.

23. The method according to claim 19, wherein said etching is Ar, CHF₃, CF₄, or O₂-plasma etching or combinations thereof.