Heating device for heating semiconductor wafers in thermal processing chambers

• US 8,138,451 B2
• Filed: 10/06/2009
• Issued: 03/20/2012
• Est. Priority Date: 01/06/1999
• Status: Expired due to Fees

• Current Assignee: Mattson Technology, Inc. (Beijing Economic & Technology Development Area), BeiJing E-Town Semiconductor Technology Co., Ltd.
• Original Assignee: Mattson Technology, Inc. (Beijing Economic & Technology Development Area)
• Inventors: Gat, Arnon, Bogart, Bob
• Primary Examiner(s): FUQUA, SHAWNTINA T
• Application Number:
  US12/574,441
• Publication Number:
  US 20100018960A1
• Time in Patent Office: 896 Days
• Field of Search: 219/390, 219/405, 219/411, 392/416, 392/418, 392/417, 118/724, 118/725, 118/50.1
• US Class Current: 219/390
• CPC Class Codes: F27B 17/0025 Especially adapted for treating semiconductor wafers
• CPC Class Codes: F27B 5/04 adapted for treating the charge in vacuum or special atmosphere
• CPC Class Codes: F27B 5/14 Arrangements of heating devices
• CPC Class Codes: F27D 19/00 Arrangements of controlling devices
• CPC Class Codes: H01L 21/67115 mainly by radiation

Abstract

An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. The light energy sources can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be either active sources of light energy or passive sources which reflect, refract or absorb light energy. For instance, in one embodiment, the tuning devices can comprise a lamp spaced from a focusing lens designed to focus determined amounts of light energy onto a particular location of a wafer being heated.

Claims

1. An apparatus for heat treating semiconductor wafers comprising:

a thermal processing chamber adapted to contain a semiconductor wafer;

a heating device in communication with the thermal processing chamber for heating a semiconductor wafer in the chamber, the heating device comprising a plurality of light energy sources configured to emit light energy onto the semiconductor wafer; and

at least one tuning device near one or more light energy sources, the tuning device comprising a passive optical element, the optical element comprising

(i) a diffusing surface that scatters light energy in multiple directions and is configured to redirect only a portion of the light energy being emitted by the light energy sources;

or

(ii) a surface containing a plurality of facets that is configured to redirect light energy being emitted by at least one of the light energy sources.

2. An apparatus as defined in claim 1, wherein the optical element redirects light energy primarily by refracting the light energy.

3. An apparatus as defined in claim 1, wherein the optical element redirects light energy primarily by reflecting the light energy.

4. An apparatus as defined in claim 1, wherein the optical element comprises the diffuse surface and wherein the surface comprises a roughened surface.

5. An apparatus as defined in claim 4, wherein the optical element comprises quartz.

6. An apparatus as defined in claim 5, wherein the optical element is planar.

7. An apparatus as defined in claim 1, wherein the optical element comprises the diffuse surface, the optical element being made from quartz and being planar.

8. An apparatus as defined in claim 1, wherein the optical element comprises the surface containing the plurality of facets.

9. An apparatus as defined in claim 8, wherein the optical element contains a plurality of facet angles, the plurality of facet angles having a fixed pitch and a fixed angle.

10. An apparatus as defined in claim 8, wherein the optical element contains a plurality of facet angles and wherein the angles vary.

11. An apparatus as defined in claim 8, wherein the optical element has a prismatic surface.

12. An apparatus as defined in claim 1, wherein the apparatus only contains a single tuning device.

13. An apparatus as defined in claim 12, wherein the tuning device redirects only a portion of the light energy being emitted by the light energy sources.

14. An apparatus as defined in claim 1, wherein the apparatus contains a plurality of tuning devices.

15. An apparatus as defined in claim 1, wherein the light energy sources produce an irradiance distribution on a semiconductor wafer contained in a thermal processing chamber, the at least one tuning device being configured to change the irradiance distribution of the light energy sources.

16. An apparatus as defined in claim 1, wherein the at least one tuning device is positioned adjacent to one of the light energy sources.

17. An apparatus as defined in claim 8, wherein the optical element has a serrated and mirrored surface.

18. An apparatus as defined in claim 3, wherein the optical element contains a surface comprising a polished metal.

19. An apparatus as defined in claim 3, wherein the optical element is coated with a reflective material.

20. An apparatus as defined in claim 18, wherein the polished metal comprises gold, copper or aluminum.

21. An apparatus as defined in claim 11, wherein the optical element comprises a ruled, prismatic surface.

22. An apparatus as defined in claim 1, further comprising a substrate holder for holding said semiconductor wafer, said substrate holder being configured to rotate said wafer.

23. An apparatus as defined in claim 1, wherein said tuning device is mounted in a movable support structure.

24. An apparatus as defined in claim 23, wherein said support structure comprises a tiltable lever arm.

25. An apparatus as defined in claim 1, wherein the height of said optical element is adjustable with respect to said light energy sources.

26. An apparatus as defined in claim 1, wherein said apparatus contains at least three of said tuning devices.

27. An apparatus as defined in claim 1, further comprising:

at least one temperature sensing device for sensing the temperature of said semiconductor wafer at at least one location; and

a controller in communication with said at least one temperature sensing device and at least one of said light energy sources, said controller being configured to control the amount of light energy being emitted by said light energy sources in response to temperature information received from said at least one temperature sensing device.