Light emitting diode, package structure and manufacturing method thereof
First Claim
1. A light emitting diode, comprising:
- a substrate;
a first semiconductor layer, disposed on the substrate;
an active layer, disposed on the first semiconductor layer;
a second semiconductor layer, disposed on the active layer, wherein the active layer and the second semiconductor layer form a mesa structure, and the mesa structure exposes a part of the first semiconductor layer;
a current distribution modifying layer, comprising a plurality of patterns disposed on the second semiconductor layer, wherein pitches of the patterns gradually decrease or increase from a position near the first electrode to a position away from the first electrode;
a first electrode, disposed on the first semiconductor layer exposed by the mesa structure and electrically connected to the first semiconductor layer; and
a second electrode, disposed on the current distribution modifying layer and electrically connected to the second semiconductor layer.
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Accused Products
Abstract
A light emitting diode (LED), a fabricating method thereof, and a package structure thereof are provided. The LED includes a substrate, a first semiconductor layer disposed on the substrate, an active layer disposed on the first semiconductor layer, a second semiconductor layer disposed on the active layer, a current distribution modifying layer, a first electrode and a second electrode. The active layer and the second semiconductor layer form a mesa structure and expose a part of the first semiconductor layer. The current distribution modifying layer is disposed on the second semiconductor layer. The first electrode is disposed on and electrically connected to the first semiconductor layer exposed by the mesa structure. The second electrode is disposed on the current distribution modifying layer and is electrically connected to the second semiconductor layer. The LED has superior light emitting efficiency.
15 Citations
19 Claims
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1. A light emitting diode, comprising:
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a substrate; a first semiconductor layer, disposed on the substrate; an active layer, disposed on the first semiconductor layer; a second semiconductor layer, disposed on the active layer, wherein the active layer and the second semiconductor layer form a mesa structure, and the mesa structure exposes a part of the first semiconductor layer; a current distribution modifying layer, comprising a plurality of patterns disposed on the second semiconductor layer, wherein pitches of the patterns gradually decrease or increase from a position near the first electrode to a position away from the first electrode; a first electrode, disposed on the first semiconductor layer exposed by the mesa structure and electrically connected to the first semiconductor layer; and a second electrode, disposed on the current distribution modifying layer and electrically connected to the second semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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Specification