Anti-reflection structures for CMOS image sensors
First Claim
Patent Images
1. A semiconductor structure comprising:
- a photodiode located in a semiconductor layer;
a transistor located on said semiconductor layer, wherein a source of said transistor is of integral construction with said photodiode;
an interconnect level dielectric layer embedding a metal line and located on said semiconductor layer; and
a protuberance-containing dielectric portion located directly on said interconnect level dielectric layer, wherein said protuberance-containing dielectric portion comprises an array of protuberances, wherein a pitch of said array of protuberances is less than 270 nm.
2 Assignments
0 Petitions
Accused Products
Abstract
Optical structures having an array of protuberances between two layers having different refractive indices are provided. The array of protuberances has vertical and lateral dimensions less than the wavelength range of lights detectable by a photodiode of a CMOS image sensor. The array of protuberances provides high transmission of light with little reflection. The array of protuberances may be provided over a photodiode, in a back-end-of-line interconnect structure, over a lens for a photodiode, on a backside of a photodiode, or on a window of a chip package.
-
Citations
24 Claims
-
1. A semiconductor structure comprising:
-
a photodiode located in a semiconductor layer; a transistor located on said semiconductor layer, wherein a source of said transistor is of integral construction with said photodiode; an interconnect level dielectric layer embedding a metal line and located on said semiconductor layer; and a protuberance-containing dielectric portion located directly on said interconnect level dielectric layer, wherein said protuberance-containing dielectric portion comprises an array of protuberances, wherein a pitch of said array of protuberances is less than 270 nm. - View Dependent Claims (2, 3, 4, 5, 6)
-
-
7. A semiconductor structure comprising:
-
a photodiode located in a semiconductor layer; a transistor located on said semiconductor layer, wherein a source of said transistor is of integral construction with said photodiode; an interconnect level dielectric layer embedding a metal line and located on said semiconductor layer; and a protuberance-containing dielectric portion located directly on said interconnect level dielectric layer, wherein said protuberance-containing dielectric portion comprises an array of protuberances, wherein said array is a regular hexagonal array. - View Dependent Claims (8, 9, 10, 11, 12)
-
-
13. A semiconductor structure comprising:
-
a photodiode located in a semiconductor layer; a transistor located on said semiconductor layer, wherein a source of said transistor is of integral construction with said photodiode; an interconnect level dielectric layer embedding a metal line and located on said semiconductor layer; and a protuberance-containing dielectric portion located directly on said interconnect level dielectric layer, wherein said protuberance-containing dielectric portion comprises an array of protuberances, wherein each of said protuberances has a shape of a cone having a monotonically decreasing cross-sectional area as a function of a vertical distance from a base of said cone. - View Dependent Claims (14, 15, 16, 17, 18)
-
-
19. A semiconductor structure comprising:
-
a photodiode located in a semiconductor layer; a transistor located on said semiconductor layer, wherein a source of said transistor is of integral construction with said photodiode; an interconnect level dielectric layer embedding a metal line and located on said semiconductor layer; a protuberance-containing dielectric portion located directly on said interconnect level dielectric layer, wherein said protuberance-containing dielectric portion comprises an array of protuberances; and a flat dielectric portion located directly on said interconnect level dielectric layer and having a same composition as said protuberance-containing dielectric portion. - View Dependent Claims (20, 21, 22, 23, 24)
-
Specification