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Anti-reflection structures for CMOS image sensors

  • US 8,138,534 B2
  • Filed: 04/29/2010
  • Issued: 03/20/2012
  • Est. Priority Date: 05/14/2008
  • Status: Active Grant
First Claim
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1. A semiconductor structure comprising:

  • a photodiode located in a semiconductor layer;

    a transistor located on said semiconductor layer, wherein a source of said transistor is of integral construction with said photodiode;

    an interconnect level dielectric layer embedding a metal line and located on said semiconductor layer; and

    a protuberance-containing dielectric portion located directly on said interconnect level dielectric layer, wherein said protuberance-containing dielectric portion comprises an array of protuberances, wherein a pitch of said array of protuberances is less than 270 nm.

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