Semiconductor device with channel stop trench and method
First Claim
1. A semiconductor device, comprising:
- a semiconductor substrate including a first surface, an active area, a peripheral area, and a drift region of a first conductivity type extending in the peripheral area to the first surface;
at least one channel stop trench formed in the semiconductor substrate, the channel stop trench extending from the first surface at least partially into the semiconductor substrate and being arranged between the active area and the peripheral area;
at least one electrode arranged in the channel stop trench;
a peripheral contact region of the semiconductor substrate arranged in the peripheral area at the first surface of the semiconductor substrate;
at least one chipping stop trench formed in the semiconductor substrate, the chipping stop trench being arranged in the peripheral area between the channel stop trench and the peripheral contact region; and
a conductive layer formed in electrical contact with the electrode arranged in the channel stop trench and in electrical contact with the peripheral contact region, wherein the conductive layer is electrically connected to the semiconductor substrate in the peripheral area and electrically insulated from the semiconductor substrate in the active area.
1 Assignment
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Accused Products
Abstract
A semiconductor device is provided which includes a semiconductor substrate having a first surface, an active area and a peripheral area. The semiconductor device further includes least one channel stop trench formed in the semiconductor substrate, wherein the channel stop trench extends from the first surface at least partially into the semiconductor substrate and is arranged between the active area and the peripheral area. At least one electrode is arranged in the channel stop trench. The semiconductor substrate includes at least a peripheral contact region, which is arranged in the peripheral area at the first surface of the semiconductor substrate. A conductive layer is provided and in electrical contact with the electrode arranged in the channel stop trench and in electrical contact with the peripheral contact region. The conductive layer is electrically connected to the semiconductor substrate merely in the peripheral area and electrically insulated from the semiconductor substrate in the active area.
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Citations
32 Claims
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1. A semiconductor device, comprising:
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a semiconductor substrate including a first surface, an active area, a peripheral area, and a drift region of a first conductivity type extending in the peripheral area to the first surface; at least one channel stop trench formed in the semiconductor substrate, the channel stop trench extending from the first surface at least partially into the semiconductor substrate and being arranged between the active area and the peripheral area; at least one electrode arranged in the channel stop trench; a peripheral contact region of the semiconductor substrate arranged in the peripheral area at the first surface of the semiconductor substrate; at least one chipping stop trench formed in the semiconductor substrate, the chipping stop trench being arranged in the peripheral area between the channel stop trench and the peripheral contact region; and a conductive layer formed in electrical contact with the electrode arranged in the channel stop trench and in electrical contact with the peripheral contact region, wherein the conductive layer is electrically connected to the semiconductor substrate in the peripheral area and electrically insulated from the semiconductor substrate in the active area. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A semiconductor device, comprising:
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a semiconductor substrate including a first surface, a substrate edge, an active area and a peripheral area, and a drift region of a first conductivity type extending in the peripheral area to the first surface, the peripheral area being arranged between the substrate edge and the active area; at least one channel stop trench formed in the semiconductor substrate, the channel stop trench extending from the first surface at least partially into the semiconductor substrate and separating the active area from the peripheral area; at least one chipping stop trench formed in the semiconductor substrate, the chipping stop trench being arranged in the peripheral area; at least one electrode arranged in the channel stop trench and electrically insulated from the active area; at least one peripheral contact region of the semiconductor substrate arranged in the peripheral area and assuming at least a portion of the first surface of the semiconductor substrate; and a conductive layer formed at a portion of the first surface of the semiconductor substrate and providing an electrical connection between the electrode arranged in the channel stop trench and the peripheral contact region of the peripheral area of the semiconductor substrate, the conductive layer being electrically insulated from the active area. - View Dependent Claims (19, 20, 21, 22)
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23. A method for manufacturing a semiconductor device, comprising:
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providing a semiconductor substrate including a first surface and a drift region of a first conductivity type extending in the peripheral area to the first surface; forming at least one channel stop trench, which extends from the first surface into the semiconductor substrate, for separating an active area of the semiconductor device from a peripheral area of the semiconductor device; forming at least one electrode in the channel stop trench, so that the electrode is electrically insulated from the active area; forming at least a peripheral contact region of the semiconductor substrate in the peripheral area at the first surface of the semiconductor substrate; and forming a conductive layer in electrical contact with the electrode arranged in the channel stop trench and in electrical contact with the peripheral contact regions, such that the conductor layer is electrically connected to the semiconductor substrate merely in the peripheral area and electrically insulated from the semiconductor substrate in the active area. - View Dependent Claims (24, 25, 26, 27, 28)
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29. A semiconductor device, comprising;
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a semiconductor substrate including a first surface, an active area, a peripheral area, and a drift region of a first conductivity type extending in the peripheral area to the first surface; at least one channel stop trench formed in the semiconductor substrate, the channel stop trench extending from the first surface at least partially into the semiconductor substrate and being arranged between the active area and the peripheral area; at least one electrode arranged in the channel stop trench; a peripheral contact region of the semiconductor substrate arranged in the peripheral area of the semiconductor substrate; a conductive layer formed in electrical contact with the electrode arranged in the channel stop trench and in electrical contact with the peripheral contact region, wherein the conductive layer is electrically connected to the semiconductor substrate in the peripheral area and electrically insulated from the semiconductor substrate in the active area.
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30. A semiconductor device, comprising:
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a semiconductor substrate including a first surface, a substrate edge, an active area, a peripheral area, and a drift region of a first conductivity type extending in the peripheral area to the first surface, the peripheral area being arranged between the substrate edge and the active area; at least one channel stop trench formed in the semiconductor substrate, the channel stop trench extending from the first surface at least partially into the semiconductor substrate and separating the active area from the peripheral area; at least one electrode arranged in the channel stop trench and electrically insulated from the active area; at least one peripheral contact region of the semiconductor substrate arranged in the peripheral area of the semiconductor substrate; an insulation region arranged on the first surface of the semiconductor substrate, the insulation region comprising openings for allowing electrical contact to the peripheral contact region and to the electrode arranged in the channel stop trench; and a conductive layer formed on the insulation region and providing an electrical connection between the electrode arranged in the channel stop trench and the peripheral contact region of the peripheral area of the semiconductor substrate, the conductive layer being electrically insulated from the active area.
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31. A semiconductor device, comprising:
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a semiconductor substrate comprising an active area, a peripheral area, at least one circumferentially running channel stop trench separating the peripheral area from the active area of the semiconductor substrate, and a drift region of a first conductivity type extending in the peripheral area to the first surface, the channel stop trench comprising at least one electrode; and an electrical connection between the electrode of the channel stop trench and at least one of a peripheral drift region and a peripheral body region, wherein the electrode of the channel stop trench is electrically insulated from the active area of the semiconductor substrate. - View Dependent Claims (32)
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Specification