Semiconductor device and method of fabricating the same

• US 8,138,589 B2
• Filed: 09/28/2010
• Issued: 03/20/2012
• Est. Priority Date: 04/27/2007
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Monma, Yohei, Yamada, Daiki, Takahashi, Hidekazu, Sugawara, Yuusuke, Nishi, Kazuo
• Primary Examiner(s): Tran, Long
• Application Number:
  US12/892,381
• Publication Number:
  US 20110012218A1
• Time in Patent Office: 539 Days
• Field of Search: 257/678, 257/E21.514, 257/E31.117, 257/E31.127
• US Class Current: 257/678
• CPC Class Codes: H01L 2224/13 of an individual bump connector
• CPC Class Codes: H01L 27/14618 Containers
• CPC Class Codes: H01L 27/14683 Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof not peculiar thereto H01L21/00
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/07811 Extrinsic, i.e. with electrical conductive fillers
• CPC Class Codes: H01L 31/0203 Containers; Encapsulations , e.g. encapsulation of photodiodesfor photovoltaic devices H01L31/048; for organic photosensitive devices H10K30/80

Abstract

In fabrication of a semiconductor device mounted on a wiring board, a semiconductor circuit portion is formed over a glass substrate. Then, an interposer having connection terminals are bonded to the semiconductor circuit portion. After that, the glass substrate is peeled off from the semiconductor circuit portion, and a mold resin is poured to cover the periphery of the semiconductor circuit portion from a direction of the separation plane. Then, the mold resin is heated under predetermined conditions to be hardened.

Claims

1. A semiconductor device comprising:

a first semiconductor element;

a first electrode electrically connected to the first semiconductor element;

a second semiconductor element operationally connected to the first semiconductor element;

a second electrode electrically connected to the second semiconductor element;

an interposer attached to the first electrode terminal and the second electrode terminal with an adhesive layer including conductive particles;

a first connection terminal disposed on the interposer so as to penetrate through the interposer and electrically contact the first electrode terminal through at least one of the conductive particles; and

a second connection terminal disposed on the interposer so as to penetrate through the interposer and electrically contact the second electrode terminal through at least one of the conductive particles.

2. The semiconductor device according to claim 1, wherein the first semiconductor element includes a first thin film transistor.

3. The semiconductor device according to claim 1 further comprising a resin layer, wherein the first and second semiconductor elements are disposed between the resin layer and the interposer.

4. The semiconductor device according to claim 1, wherein the first semiconductor element includes an optical sensor and the second semiconductor element includes an amplifier circuit.

5. The semiconductor device according to claim 4, wherein the optical sensor includes a color filter.

6. A semiconductor device comprising:

a first semiconductor element;

a first electrode electrically connected to the first semiconductor element;

a second semiconductor element operationally connected to the first semiconductor element;

a second electrode electrically connected to the second semiconductor element;

an interposer attached to a first electrode terminal and a second electrode terminal with an adhesive layer including conductive particles;

a first connection terminal disposed on the interposer so as to penetrate through the interposer and be in contact with the first electrode terminal; and

a second connection terminal disposed on the interposer so as to penetrate through the interposer and be in contact with the second electrode terminal.

7. The semiconductor device according to claim 6, wherein the first semiconductor element includes a first thin film transistor.

8. The semiconductor device according to claim 6 further comprising a resin layer, wherein the first and second semiconductor elements are disposed between the resin layer and the interposer.

9. The semiconductor device according to claim 6, wherein the first semiconductor element includes an optical sensor and the second semiconductor element includes an amplifier circuit.

10. The semiconductor device according to claim 9, wherein the optical sensor includes a color filter.