Substrate distortion measurement
First Claim
Patent Images
1. A method comprising:
- (i) measuring the sizes and locations of marks on a substrate;
(ii) determining distortions in the substrate by comparing the measured sizes and locations with previously measured sizes and locations of the marks; and
(iii) exposing the substrate to patterned radiation,wherein a first side of the substrate is exposed to the patterned radiation and wherein the sizes and locations of the marks are measured from a second side of the substrate that is opposite to said first side.
1 Assignment
0 Petitions
Accused Products
Abstract
A substrate distortion measurement apparatus comprising one or more optical detectors arranged to measure the locations of pits or holes provided in a substrate, a memory arranged to store previously determined locations of the pits or holes in the substrate, and a comparator arranged to compare the measured locations of the pits or holes with the previously determined locations of the pits or holes, to determine distortion of the substrate.
-
Citations
21 Claims
-
1. A method comprising:
-
(i) measuring the sizes and locations of marks on a substrate; (ii) determining distortions in the substrate by comparing the measured sizes and locations with previously measured sizes and locations of the marks; and (iii) exposing the substrate to patterned radiation, wherein a first side of the substrate is exposed to the patterned radiation and wherein the sizes and locations of the marks are measured from a second side of the substrate that is opposite to said first side. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
-
-
14. A substrate distortion measurement apparatus comprising:
-
(i) a detector arranged to measure sizes and locations of marks provided on a substrate, (ii) a memory arranged to store previously measured sizes and locations of the marks that are located on the substrate, and (iii) a comparator arranged to compare the measured sizes and locations of the marks with the previously measured sizes and locations of the marks, wherein, in use, a first side of the substrate is exposed to a patterned radiation so as to form a pattern on said first side and wherein the sizes and locations of the marks are measured from a second side of the substrate that is opposite to said first side. - View Dependent Claims (15, 16, 17, 18, 19, 20)
-
-
21. A lithography apparatus comprising:
-
a substrate distortion measurement apparatus comprising; (i) a detector arranged to measure sizes and locations of marks provided on a substrate, (ii) a memory arranged to store previously measured sizes and locations of the marks that are located on the substrate, and (iii) a comparator arranged to compare the measured sizes and locations of the marks with the previously measured sizes and locations of the marks, and an array of moveable mirrors arranged to form a pattern to be projected onto the substrate, and control electronics arranged to adjust the pattern formed by the moveable mirrors to compensate for the determined distortion of the substrate, wherein a first side of the substrate is exposed with the pattern and wherein the sizes and locations of the marks are measured from a second side of the substrate that is opposite to said first side.
-
Specification