Method of transferring a thin film onto a support
First Claim
Patent Images
1. A method for transferring a thin germanium layer onto a first silicon support, the method comprising:
- providing a structure comprising a layer at least a portion of which is derived from a bulk substrate of germanium, including a preliminary step of bonding a bulk plate of germanium to a second silicon support and thinning the bulk plate to obtain the layer, wherein the layer is attached to the second silicon support, the layer being between 1 μ
m and 50 μ
m thick;
forming a buried weakened zone in the layer at a given depth, by implanting at least one gaseous species, the buried weakened zone delimiting in the structure the thin germanium layer to be transferred;
bonding the layer to the first silicon support; and
fracturing the layer in the weakened zone, wherein the fracturing is carried out with a process comprising at least one heat treatment step.
1 Assignment
0 Petitions
Accused Products
Abstract
A method of transferring a thin film onto a first support, includes supplying a structure comprising a film of which at least one part originates from a solid substrate of a first material and which is solidly connected to a second support having a thermal expansion coefficient that is different from that of the first material and close to that of the first support, forming an embrittled area inside the film that defines the thin film to be transferred, affixing the film that is solidly connected to the second support to the first support, and breaking the film at the embrittled area.
-
Citations
12 Claims
-
1. A method for transferring a thin germanium layer onto a first silicon support, the method comprising:
-
providing a structure comprising a layer at least a portion of which is derived from a bulk substrate of germanium, including a preliminary step of bonding a bulk plate of germanium to a second silicon support and thinning the bulk plate to obtain the layer, wherein the layer is attached to the second silicon support, the layer being between 1 μ
m and 50 μ
m thick;forming a buried weakened zone in the layer at a given depth, by implanting at least one gaseous species, the buried weakened zone delimiting in the structure the thin germanium layer to be transferred; bonding the layer to the first silicon support; and fracturing the layer in the weakened zone, wherein the fracturing is carried out with a process comprising at least one heat treatment step. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
-
Specification