Apparatus for depositing a uniform silicon film and methods for manufacturing the same

• US 8,142,606 B2
• Filed: 06/07/2007
• Issued: 03/27/2012
• Est. Priority Date: 06/07/2007
• Status: Expired due to Fees

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Choi, Soo Young, Won, Tae Kyung, Park, Beom Soo, White, John M.
• Primary Examiner(s): CHEN, KEATH T
• Application Number:
  US11/759,542
• Publication Number:
  US 20080305246A1
• Time in Patent Office: 1,755 Days
• Field of Search: 118/715, 156/345.34
• US Class Current: 156/345.34
• CPC Class Codes: C23C 16/45565 Shower nozzles
• CPC Class Codes: H01L 31/182 Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
• CPC Class Codes: H01L 31/1824 Special manufacturing methods for microcrystalline Si, uc-Si
• CPC Class Codes: Y02E 10/545 Microcrystalline silicon PV cells
• CPC Class Codes: Y02E 10/546 Polycrystalline silicon PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

Methods and apparatus having a gradient spacing created between a substrate support assembly and a gas distribution plate for depositing a silicon film for solar cell applications are provided. In one embodiment, an apparatus for depositing films for solar cell applications may include a processing chamber, a substrate support disposed in the processing chamber and configured to support a quadrilateral substrate thereon, and a gas distribution plate disposed in the processing chamber above the substrate support, wherein a bottom surface of the gas distribution plate has a perimeter that includes edges and corners, and wherein the corners of the gas distribution plate are closer to the substrate support than the edges of the gas distribution plate.

Claims

1. An apparatus for depositing films suitable for solar cell applications, comprising:

a processing chamber;

a substrate support disposed in the processing chamber and configured to support a quadrilateral substrate thereon; and

a gas distribution plate disposed in the processing chamber above the substrate support, wherein a bottom surface of the gas distribution plate has a perimeter that includes edges and corners, and wherein the corners of the gas distribution plate are closer to the substrate support than each of the edges of the gas distribution plate, wherein the corners of the gas distribution plate are configured to deposit a silicon film having an increased crystal volume at corners of deposited silicon film.

2. The apparatus of claim 1, wherein the bottom surface of the gas distribution plate further comprises a center portion that is spaced further from the substrate support than the edges of the gas distribution plate.

3. The apparatus of claim 1, wherein the substrate support further comprises:

a curved upper surface.

4. The apparatus of claim 1, further comprising:

a plurality of apertures formed through the gas distribution plate.

5. The apparatus of claim 4, wherein the apertures have a diameter between about 0.01 inch and about 1 inch.

6. The apparatus of claim 5, wherein the gas distribution plate has a center thickness less than a thickness at the edge of the gas distribution plate.

7. The apparatus of claim 1, wherein the gas distribution plate has a curved downstream surface.

8. The apparatus of claim 7, wherein the curved surface is on the gas distribution plate and has a chord depth between about 0.05 inch and about 1 inch.

9. The apparatus of claim 7, wherein the curved surface is formed on the gas distribution plate and has at a chord depth of no more than about 3 percent of a length of the plate.

10. An apparatus for depositing films suitable for solar cell applications, comprising:

a processing chamber;

a substrate support disposed in the processing chamber and configured to support a quadrilateral substrate thereon; and

a gas distribution plate disposed in the processing chamber above the substrate support, wherein a bottom surface of the gas distribution plate has a perimeter that includes edges and corners, and wherein each of the edges of the gas distribution plate are concave wherein the corners of the gas distribution plate are configured to deposit a silicon film having an increased crystal volume at corners of deposited silicon film.

11. The apparatus of claim 10, wherein the corners of the gas distribution plate have a thickness greater than a thickness of the gas distribution plate at a midpoint of the edge, and wherein a center of the gas distribution plate has a thickness less than the thickness at the midpoint of the edge.

12. The apparatus of claim 10, wherein the gas distribution plate further comprises:

a plurality of apertures formed therethrough, wherein the apertures located along the edge of the gas distribution plate have a flow conductance that is greater than a conductance of the apertures located at the corners and less than a conductance of the apertures located in a center of the gas distribution plate.